DMN601WK [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN601WK |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN601WK
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
•
•
•
•
•
•
•
•
Low On-Resistance: RDS(ON)
A
SOT-323
Low Gate Threshold Voltage
Low Input Capacitance
D
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
Fast Switching Speed
C
B
B
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
G
S
C
G
H
D
0.65 Nominal
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
K
J
M
G
H
Mechanical Data
L
D
E
J
•
•
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
K
0.90
0.25
0.10
0°
Drain
L
•
•
Moisture sensitivity: Level 1 per J-STD-020C
M
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
α
All Dimensions in mm
•
•
•
•
Terminal Connections: See Diagram
Marking: See Last Page
Gate
ESD protected up to 2kV
Ordering & Date Code Information: See Last Page
Weight: 0.006 grams (approximate)
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
60
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
VGSS
20
300
800
Continuous
Pulsed (Note 3)
ID
mA
Pd
Total Power Dissipation (Note 1)
200
625
mW
RθJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
Tj, TSTG
-65 to +150
°C
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10µS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30653 Rev. 2 - 2
1 of 4
DMN601WK
www.diodes.com
© Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
V
V
GS = 0V, ID = 10µA
60
⎯
⎯
⎯
⎯
⎯
⎯
1.0
10
V
DS = 60V, VGS = 0V
µA
µA
VGS
= 20V, VDS = 0V
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 0.2A
VDS = 10V, ID = 0.2A
VGS(th)
RDS (ON)
|Yfs|
1.0
⎯
1.6
2.5
V
Ω
⎯
⎯
2.0
3.0
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
⎯
⎯
ms
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
pF
pF
pF
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
Notes:
5. Short duration test pulse used to minimize self-heating effect.
1.4
1.2
1.00
0.10
0.01
VGS = 10V
8V
6V
5V
4V
3V
VDS = 10V
Pulsed
10V
8V
6V
1.0
0.8
0.6
0.4
0.2
0
5V
TA = 125°C
4V
TA = 75°C
TA = 25°C
TA = -25°C
3V
1.5
1
2
5
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
10
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
1.5
1
1
TA = -55°C
TA = -25°C
TA = 0°C
TA = 25°C
0.5
0
0.1
0.001
-25
75 100
0
25
50
125 150
-50
0.1
1
0.01
Tch, CHANNEL TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30653 Rev. 2 - 2
2 of 4
www.diodes.com
DMN601WK
10
7
6
5
4
VGS = 5V
Pulsed
TA = 25°C
Pulsed
TA = 85°C
TA = 125°C
ID = 300mA
TA = 150°C
1
TA = -55°C
3
2
1
TA = 0°C
TA = 25°C
TA = -25°C
ID = 150mA
0.1
0
1
0.1
ID, DRAIN CURRENT (A)
0.001
0.01
4
8
16 18
2
6
10 12 14
20
0
VGS, GATE SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
2
1
VGS = 0V
Pulsed
VGS = 10V
ID = 300mA
Pulsed
TA = 125°C
TA = 150°C
ID = 150mA
0.1
TA = 85°C
TA = 25°C
1.5
1
TA = 0°C
0.01
TA = -25°C
0.5
0
TA = -55°C
0.001
-75
0
25 50 75
150
100 125
-50 -25
0.5
1
0
1.5
Tch, CHANNEL TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
1
1
VGS = 10V
VGS = 10V
Pulsed
TA= 25°C
Pulsed
TA = 25°C
0.1
TA = 150°C
0.1
TA = -55°C
TA = 85°C
0.01
0.01
VGS = 0V
0.001
0.001
0
0.5
1
1
0.001
0.01
0.1
VSD, SOURCE-DRAIN VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
DS30653 Rev. 2 - 2
3 of 4
www.diodes.com
DMN601WK
(Note 6)
Ordering Information
Device
Packaging
Shipping
DMN601WK-7
SOT-323
3000/Tape & Reel
Notes:
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K7K
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30653 Rev. 2 - 2
4 of 4
DMN601WK
www.diodes.com
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