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DMMT5401-7-F [DIODES]

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED PNP小信号表面贴装晶体管
DMMT5401-7-F
型号： DMMT5401-7-F
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MATCHED PNP小信号表面贴装晶体管

晶体 小信号双极晶体管 开关 光电二极管 PC
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中文：  中文翻译
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SPICE MODEL: DMMT5401  
DMMT5401  
Lead-free Green  
MATCHED PNP SMALL SIGNAL SURFACE MOUNT  
TRANSISTOR  
Features  
·
·
·
·
·
·
·
Epitaxial Planar Die Construction  
A
SOT-26  
Complementary NPN Type Available (DMMT5551)  
Ideal for Low Power Amplification and Switching  
Intrinsically Matched PNP Pair (Note 1)  
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)  
Lead Free/RoHS Compliant (Note 4)  
E2  
C2  
E1  
Dim Min Max Typ  
A
B
C
D
F
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
C
B
C1  
B1  
B2  
"Green" Device, Note 5 and 6  
¾
¾
0.95  
0.55  
H
¾
¾
K
M
H
J
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
Mechanical Data  
J
F
L
D
·
Case: SOT-26  
K
L
·
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 7. UL Flammability Classification  
Rating 94V-0  
M
a
E1  
E2  
C2  
0°  
8°  
¾
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
All Dimensions in mm  
Terminals: Solderable per MIL-STD-202, Method 208  
C1  
B1  
B2  
Lead Free Plating (Matte Tin Finish annealed over  
Copper leadframe).  
·
·
·
Marking (See Page 2): K4S  
Order & Date Code Information: See Page 2  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Symbol  
Maximum Ratings  
Characteristic  
Value  
-160  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
-150  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous (Note 2)  
Power Dissipation (Note 2, 3)  
-200  
mA  
mW  
°C/W  
°C  
Pd  
300  
R
Thermal Resistance, Junction to Ambient (Note 2)  
Operating and Storage and Temperature Range  
417  
qJA  
Tj, TSTG  
-55 to +150  
Notes: 1. Built with adjacent die from a single wafer.  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Maximum combined dissipation.  
4. No purposefully added lead.  
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to  
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30437 Rev. 5 - 2  
1 of 4  
DMMT5401  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC = -100mA, IE = 0  
-160  
-150  
-5.0  
¾
¾
¾
V
V
V
IC = -1.0mA, IB = 0  
IE = -10mA, IC = 0  
VCB = -120V, IE = 0  
nA  
ICBO  
IEBO  
Collector Cutoff Current  
¾
¾
-50  
-50  
VCB = -120V, IE = 0, TA = 100°C  
mA  
VEB = -3.0V, IC = 0  
Emitter Cutoff Current  
nA  
ON CHARACTERISTICS (Note 7)  
IC = -1.0mA, VCE = -5.0V  
50  
60  
50  
¾
240  
¾
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-50mA, VCE = -5.0V  
hFE  
DC Current Gain (Note 8)  
¾
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.2  
-0.5  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
¾
V
V
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
¾
-1.0  
SMALL SIGNAL CHARACTERISTICS  
VCB = -10V, f = 1.0MHz, IE = 0  
Cobo  
hfe  
Output Capacitance  
¾
6.0  
pF  
VCE = -10V, IC = -1.0mA,  
f = 1.0kHz  
Small Signal Current Gain  
Current Gain-Bandwidth Product  
Noise Figure  
40  
200  
¾
VCE = -10V, IC = -10mA,  
f = 100MHz  
fT  
100  
300  
8.0  
MHz  
dB  
VCE = -5.0V, IC = -200mA,  
RS = 10W, f = 1.0kHz  
NF  
¾
(Note 6 & 9)  
Ordering Information  
Device  
Packaging  
Shipping  
DMMT5401-7-F  
SOT-26  
3000/Tape & Reel  
Notes:  
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to  
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
7. Short duration pulse test used to minimize self-heating effect.  
8. The DC Current Gain, h , (matched at I = -10mA and V = -5V) Collector Emitter Saturation Voltage, V , and Base  
CE(SAT)  
FE  
C
CE  
Emitter Saturation Voltage, V  
are matched with typical matched tolerances of 1% and maximum of 2%.  
BE(SAT)  
9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K4S = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: T = 2006  
K4S  
M = Month ex: 9 = September  
Date Code Key  
2006  
2007  
2008  
2009  
Year  
2004  
2005  
2010  
2011  
2012  
T
U
V
W
Code  
R
S
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30437 Rev. 5 - 2  
2 of 4  
DMMT5401  
www.diodes.com  
400  
350  
300  
250  
10.0  
I
C
Note 2  
= 10  
I
B
1.0  
T = 150°C  
A
200  
150  
0.1  
100  
T = -50°C  
A
50  
T
= 25°C  
A
0.01  
0
1
10  
100  
1000  
200  
0
175  
25  
50  
150  
100 125  
75  
I , COLLECTOR CURRENT (mA)  
C
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 2, Collector Emitter Saturation Voltage  
vs. Collector Current  
Fig. 1, Max Power Dissipation vs  
Ambient Temperature  
10,000  
1.0  
0.9  
0.8  
V
CE  
= 5V  
V
CE  
= 5V  
T = -50°C  
A
1000  
100  
10  
T = 150°C  
A
0.7  
0.6  
0.5  
0.4  
T
A
= 25°C  
T = 150°C  
A
T
= 25°C  
A
T = -50°C  
A
0.3  
0.2  
0.1  
1
0.1  
1.0  
10  
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Fig. 4, Base Emitter Voltage vs. Collector Current  
Fig. 3, DC Current Gain vs. Collector Current  
1000  
100  
10  
V
CE  
= 10V  
1
10  
1
100  
I , COLLECTOR CURRENT (mA)  
C
Fig. 5, Gain Bandwidth Product vs Collector Current  
DS30437 Rev. 5 - 2  
3 of 4  
www.diodes.com  
DMMT5401  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodes Incorporatedand all thecompanies whoseproducts arerepresentedonourwebsite, harmless againstall damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the  
President ofDiodes Incorporated.  
DS30437 Rev. 5 - 2  
4 of 4  
DMMT5401  
www.diodes.com  

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