DDA122LH_1 [DIODES]

PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR; PNP预偏置小信号双表面贴装晶体管
DDA122LH_1
型号: DDA122LH_1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
PNP预偏置小信号双表面贴装晶体管

晶体 晶体管
文件: 总3页 (文件大小:162K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DDA (LO-R1) H  
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(DDC)  
A
SOT-563  
Dim Min Max Typ  
A
B
C
D
G
H
K
L
0.15 0.30 0.25  
1.10 1.25 1.20  
1.55 1.70 1.60  
0.50  
Built-In Biasing Resistors  
Lead Free By Design/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
B
C
PXXYM  
D
G
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.56 0.60 0.60  
0.15 0.25 0.20  
0.10 0.18 0.11  
Case: SOT-563  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
M
K
M
H
L
Terminal Connections: See Diagram  
Weight: 0.005 grams (approximate)  
All Dimensions in mm  
SEE NOTE 1  
5
4
P/N  
R1 (NOM)  
0.22KΩ  
0.47KΩ  
0.22KΩ  
0.47KΩ  
R2 (NOM)  
MARKING  
DDA122LH  
DDA142JH  
DDA122TH  
DDA142TH  
10KΩ  
10KΩ  
OPEN  
OPEN  
P81  
P82  
P83  
P84  
4
3
6
1
5
6
1
R1  
R1  
R2  
R2  
R1  
R1  
2
2
3
R1, R2  
R1 Only  
SCHEMATIC DIAGRAM, TOP VIEW  
Maximum Ratings  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage (6) to (1) and (3) to (4)  
Input Voltage (2) to (1) and (5) to (4)  
-50  
V
VCC  
DDA122LH  
DDA142JH  
DDA122TH  
DDA142TH  
+5 to -6  
+5 to -6  
V
V
VIN  
VEBO (MAX)  
IC  
Input Voltage (1) to (2) and (4) to (5)  
-5  
-100  
Output Current  
All  
mA  
mW  
°C/W  
°C  
Power Dissipation  
150  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
(Note 2)  
833  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).  
2. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30427 Rev. 4 - 2  
DDA (LO-R1) H  
© Diodes Incorporated  
1 of 3  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
VCC = -5V, IO = -100μA  
DDA122LH  
DDA142JH  
DDA122LH  
DDA142JH  
-0.3  
-0.3  
V
V
Vl(off)  
Input Voltage  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -20mA  
-2.0  
-2.0  
Vl(on)  
Output Voltage  
-0.3V  
V
VO(on)  
IO/Il = -5mA/-0.25mA  
VI = -5V  
DDA122LH  
DDA142JH  
-28  
-13  
Input Current  
mA  
Il  
Output Current  
DC Current Gain  
-0.5  
IO(off)  
μA VCC = -50V, VI = 0V  
DDA122LH  
DDA142JH  
56  
56  
Gl  
fT  
VO = -5V, IO = -10mA  
Gain-Bandwidth Product*  
200  
MHz  
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics  
@TA = 25°C unless otherwise specified  
R1-Only  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
-50  
V
V
BVCBO  
IC = -50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
-40  
-5  
BVCEO  
BVEBO  
ICBO  
IC = -1mA  
IE = -50μA  
IE = -50μA  
DDA122TH  
DDA142TH  
V
Collector Cutoff Current  
Emitter Cutoff Current  
-0.5  
μA VCB = -50V  
μA VEB = -4V  
DDA122TH  
DDA142TH  
-0.5  
-0.5  
IEBO  
Collector-Emitter Saturation Voltage  
-0.3  
V
VCE(sat)  
IC = -5mA, IB = -0.25mA  
DDA122TH  
DDA142TH  
100  
100  
250  
250  
600  
600  
DC Current Transfer Ratio  
Gain-Bandwidth Product*  
* Transistor - For Reference Only  
hFE  
fT  
IC = -1mA, VCE = -5V  
200  
MHz  
VCE = -10V, IE = 5mA, f = 100MHz  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Power Derating Curve  
DS30427 Rev. 4 - 2  
DDA (LO-R1) H  
© Diodes Incorporated  
2 of 3  
www.diodes.com  
Ordering Information (Note 6)  
Packaging  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DDA122LH-7  
DDA142JH-7  
DDA122TH-7  
DDA142TH-7  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
XXX = Product Type Marking Code (See Page 1)  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
PXXYM  
Date Code Key  
2007  
2008  
2009  
2010  
2011  
2012  
Year  
2002  
2003  
2004  
2005  
2006  
U
V
W
X
Y
Z
Code  
N
P
R
S
T
Aug  
Sep  
Oct  
Nov  
Dec  
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30427 Rev. 4 - 2  
DDA (LO-R1) H  
© Diodes Incorporated  
3 of 3  
www.diodes.com  

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