DDA122LU_1 [DIODES]

PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR; PNP预偏置小信号双表面贴装晶体管
DDA122LU_1
型号: DDA122LU_1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
PNP预偏置小信号双表面贴装晶体管

晶体 晶体管
文件: 总3页 (文件大小:186K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DDA (LO-R1) U  
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary NPN Types Available (DDC)  
Built-In Biasing Resistors  
Lead-Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
A
SOT-363  
Min  
Dim  
A
B
C
D
F
Max  
0.30  
1.35  
2.20  
0.10  
C
B
1.15  
2.00  
Mechanical Data  
0.65 Nominal  
Case: SOT-363  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
0.30  
1.80  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
H
H
J
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin Solderable per  
MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Type Code: See Table Below  
Ordering Information: See Page 3  
Weight: 0.0058 grams (approximate)  
K
J
M
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
M
α
All Dimensions in mm  
6
1
5
4
3
5
4
3
6
1
R1  
R1  
R2  
P/N  
R1 (NOM)  
0.22K  
0.47K  
0.22K  
0.47K  
R2 (NOM) Type Code  
DDA122LU  
DDA142JU  
DDA122TU  
DDA142TU  
10K  
10K  
P81  
P82  
P83  
P84  
R2  
R1  
R1  
OPEN  
OPEN  
2
2
R1, R2  
R1 Only  
SCHEMATIC DIAGRAM  
Maximum Ratings NPN Section  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage (1) to (6) and (4) to (3)  
Input Voltage (1) to (2) and (4) to (5)  
-50  
V
VCC  
DDA122LU  
DDA142JU  
DDA122TU  
DDA142TU  
+5 to -6  
+5 to -6  
V
V
VIN  
Input Voltage (1) to (2) and (4) to (5)  
-5  
VEBO (MAX)  
Output Current  
All  
-100  
200  
mA  
mW  
°C/W  
°C  
IC  
Power Dissipation (Note 2)  
Pd  
Thermal Resistance, Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. 150mW per element must not be exceeded.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30423 Rev. 7 - 2  
DDA (LO-R1) U  
© Diodes Incorporated  
1 of 3  
www.diodes.com  
Electrical Characteristics  
@TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
DDA122LU  
DDA142JU  
-0.3  
-0.3  
V
Vl(off)  
VCC = -5V, IO = -100μA  
Input Voltage  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -20mA  
DDA122LU  
DDA142JU  
-2.0  
-2.0  
V
V
Vl(on)  
VO(on)  
Il  
Output Voltage  
Input Current  
-0.3V  
IO/Il = -5mA/-0.25mA  
DDA122LU  
DDA142JU  
-28  
-13  
mA  
VI = -5V  
Output Current  
DC Current Gain  
-0.5  
IO(off)  
Gl  
μA VCC = -50V, VI = 0V  
DDA122LU  
DDA142JU  
56  
56  
VO = -5V, IO = -10mA  
Gain-Bandwidth Product*  
200  
MHz  
fT  
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics  
@TA = 25°C unless otherwise specified  
R1 Only Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
-50  
V
V
BVCBO  
IC = -50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-40  
-5  
BVCEO  
BVEBO  
ICBO  
IC = -1mA  
IE = -50μA  
IE = -50μA  
DDA122TU  
DDA142TU  
V
-0.5  
μA VCB = -50V  
DDA122TU  
DDA142TU  
-0.5  
-0.5  
Emitter Cutoff Current  
IEBO  
μA VEB = -4V  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
-0.3  
V
VCE(sat)  
hFE  
IC = -5mA, IB = -0.25mA  
IC = -1mA, VCE = -5V  
DDA122TU  
DDA142TU  
100  
100  
250  
250  
600  
600  
Gain-Bandwidth Product*  
200  
MHz  
fT  
VCE = -10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
250  
200  
150  
100  
50  
R
= 625°C/W  
θJA  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
Fig. 1 Power Derating Curve  
(150mW per element must not be exceeded)  
°C)  
DS30423 Rev. 7 - 2  
DDA (LO-R1) U  
© Diodes Incorporated  
2 of 3  
www.diodes.com  
Ordering Information (Note 6)  
Packaging  
SOT-363  
SOT-363  
SOT-363  
SOT-363  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DDA122LU-7-F  
DDA142JU-7-F  
DDA122TU-7-F  
DDA142TU-7-F  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
Pxx = Product Type Marking Code  
See Page 1 Diagrams  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M Y X P X  
PXX YM  
M = Month ex: 9 = September  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30423 Rev. 7 - 2  
DDA (LO-R1) U  
© Diodes Incorporated  
3 of 3  
www.diodes.com  

相关型号:

DDA122TH

PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA122TH-7

PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA122TU

PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA122TU-13-F

Transistor
DIODES

DDA122TU-7-F

PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA123JH

PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA123JH-7

PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA123JK

PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA123JK-13

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
DIODES

DDA123JK-7

PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA123JK-7-F

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
DIODES

DDA123JU

PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR
DIODES