BSS138DW [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
| 型号： | BSS138DW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总1页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
Low On-Resistance
SOT-363
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
A
Dim
A
MinMax
0.10
0.30
1.35
2.20
D2
G1
S1
B
1.15
KXX YY
Y Y K X X
C
2.00
C
B
Mechanical Data
D
0.65 Nominal
S2
G2
D1
F
·
·
Case: SOT-363, Molded Plastic
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
H
Terminals: Solderable per MIL-STD-202,
Method 208
H
J
·
·
Terminal Connections: See Diagram
K
J
K
M
0.90
0.25
0.10
Marking: KXX: Product marking code
YY: Date code
L
M
L
D
F
·
·
Marking Code: K38
All Dimensions in mm
Weight: 0.006 grams (approx.)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGSS
ID
BSS138DW
Units
V
50
50
Drain-Source Voltage
V
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Continuous
Continuous
±20
V
mA
mW
°C/W
°C
Drain Current (Note 1)
200
Pd
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
200
RqJA
625
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
50
¾
¾
75
¾
¾
¾
0.5
V
V
GS = 0V, ID = 250mA
VDS = 50V, VGS = 0V
µA
nA
IGSS
±100
V
GS = ±20V, VDS = 0V
DS = VGS, ID =-250mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
0.5
¾
1.2
1.4
¾
1.5
3.5
¾
V
W
V
VGS = 10V, ID = 0.22A
Static Drain-Source On-Resistance
ForwardTransconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS =25V, ID = 0.2A, f = 1.0KHz
100
mS
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8.0
tD(ON)
¾
¾
¾
¾
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50W
tD(OFF)
Turn-Off Delay Time
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
3. RGS £ 20KW.
DS30203 Rev. B-2
1 of 1
BSS138DW
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