BSS138DW-7 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
| 型号： | BSS138DW-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: BSS138DW
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
SOT-363
D2
G1
S1
Low Input Capacitance
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
Fast Switching Speed
C
B
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
B
S2
G2
D1
C
G
H
Mechanical Data
·
·
D
0.65 Nominal
Case: SOT-363
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
K
J
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
J
L
D
F
Terminals: Solderable per MIL-STD-202, Method 208
K
0.90
0.25
0.10
0°
D2
G1
S1
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
L
M
a
·
·
·
·
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
All Dimensions in mm
S2
G2
D1
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGSS
ID
BSS138DW
Units
V
50
50
Drain-Source Voltage
V
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Continuous
Continuous
±20
V
mA
mW
°C/W
°C
Drain Current (Note 1)
200
Pd
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
200
RqJA
625
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 250mA
VDS = 50V, VGS = 0V
GS = ±20V, VDS = 0V
50
¾
¾
75
¾
¾
¾
0.5
V
µA
nA
IGSS
V
±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250mA
0.5
¾
1.2
1.4
¾
1.5
3.5
¾
V
W
VGS = 10V, ID = 0.22A
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS =25V, ID = 0.2A, f = 1.0KHz
100
mS
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8.0
tD(ON)
¾
¾
¾
¾
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50W
tD(OFF)
Turn-Off Delay Time
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3.
R
£ 20KW.
GS
4. No purposefully added lead.
DS30203 Rev. 8 - 2
1 of 5
BSS138DW
www.diodes.com
ã Diodes Incorporated
(Note 5)
Ordering Information
Device
Packaging
Shipping
BSS138DW-7
SOT-363
3000/Tape & Reel
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F.
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
YM
K38
Y M
K 3 8
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
0.6
VGS = 3.5V
Tj = 25°C
0.5
0.4
VGS = 3.25V
VGS = 3.0V
0.3
0.2
VGS = 2.75V
VGS = 2.5V
0.1
0
2
9
8
5
6
7
10
1
3
4
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8
0.7
0.6
0.5
VDS = 1V
-55°C
25°C
150°C
0.4
0.3
0.2
0.1
0
0
1.5
3.5
4
4.5
0.5
1
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
DS30203 Rev. 8 - 2
2 of 5
BSS138DW
www.diodes.com
2.45
2.25
2.05
VGS = 10V
ID = 0.5A
1.85
1.65
1.45
1.25
1.05
0.85
VGS = 4.5V
ID = 0.075A
0.65
-55
95
Tj, JUNCTION TEMPERATURE (°C)
145
-5
45
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2
1.8
1.6
ID = 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-40
110 125
140
-25
5
20 35 50 65 80 95
-55
-10
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
150°C
VGS = 2.5V
7
6
5
25°C
4
3
2
1
-55°C
0
0.1
0.08
0.12
0.14
0.16
0
0.02
0.04
0.06
ID, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
DS30203 Rev. 8 - 2
3 of 5
BSS138DW
www.diodes.com
9
8
VGS = 2.75V
7
150°C
6
5
4
3
2
1
25°C
-55°C
0
0
0.05
0.1
0.15
0.25
0.2
ID, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
6
5
VGS = 4.5V
150°C
4
3
2
1
0
25°C
-55°C
0.1
0.45
0.5
0.25 0.3 0.35
0.05
0.15 0.2
0.4
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
3
VGS = 10V
150°C
2.5
2
1.5
1
25°C
-55°C
0.5
0
0.1
0.45
0.5
0.25 0.3 0.35
ID, DRAIN CURRENT (A)
0.05
0.15 0.2
0.4
0
Fig. 8 Drain-Source On Resistance vs. Drain Current
DS30203 Rev. 8 - 2
4 of 5
BSS138DW
www.diodes.com
1
0.1
150°C
-55°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
VGS = 0V
f = 1MHz
CiSS
10
COSS
CrSS
1
0
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
DS30203 Rev. 8 - 2
5 of 5
BSS138DW
www.diodes.com
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