BCX54TC [DIODES]
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,;![BCX54TC](http://pdffile.icpdf.com/pdf2/p00251/img/icpdf/BCX5410TC_1520240_icpdf.jpg)
型号: | BCX54TC |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, 开关 晶体管 |
文件: | 总7页 (文件大小:388K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BCX54 /55 /56
NPN MEDIUM POWER TRANSISTORS IN SOT89
Features
Mechanical Data
BVCEO > 45V, 60V & 80V
Case: SOT89
Ic = 1A Continuous Collector Current
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
ICM = 2A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Gain Groups 10 and 16
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Leads.
Solderable per MIL-STD-202 Method 208
Weight: 0.055 grams (Approximate)
Epitaxial Planar Die Construction
Complementary PNP Types: BCX51, 52, and 53
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
SOT89
C
E
E
C
B
B
C
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Notes 4 & 5)
Product
BCX54TA
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Automotive
Marking
BA
BC
BD
BD
BE
BG
BM
BH
BK
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
7
7
7
13
7
7
7
7
7
7
13
13
13
13
13
13
13
13
13
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
BCX5410TA
BCX5416TA
BCX5416-13R
BCX55TA
BCX5510TA
BCX5516TA
BCX56TA
BCX5610TA
BCX5616TA
BCX5616TC
BCX5410TC
BCX5416TC
BCX54TC
BCX5510TC
BCX5516TC
BCX55TC
1,000
1,000
4,000
1,000
1,000
1,000
1,000
1,000
1,000
4,000
4,000
4,000
4,000
4,000
4,000
4,000
BL
BL
BC
BD
BA
BG
BM
BE
BCX5610TC
BCX56TC
BCX5616QTA
BK
BH
4,000
4,000
Refer to http://diodes.com/datasheets/BCX5616Q.pdf
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
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© Diodes Incorporated
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
Marking Information
SOT89
xx = Product Type Marking Code, as follows:
xx
BCX54 = BA
BCX5410 = BC
BCX5416 = BD
BCX55 = BE
BCX5510 = BG
BCX5516 = BM
BCX56 = BH
BCX5610 = BK
BCX5616 = BL
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
BCX54
45
BCX55
60
BCX56
100
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
45
60
80
V
6
V
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
1
A
2
ICM
100
200
IB
mA
IBM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 6)
1
Power Dissipation
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
1.5
W
PD
2.0
125
Thermal Resistance, Junction to Ambient Air
83
60
°C/W
RθJA
Thermal Resistance, Junction to Lead
13
°C/W
RθJL
Operating and Storage Temperature Range
-65 to +150
°C
TJ, TSTG
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
Value
Unit
V
JEDEC Class
ESD HBM
ESD MM
4,000
400
3A
C
V
Notes:
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
Thermal Characteristics and Derating Information
120
25mm x 25mm 1oz Cu
25mm x 25mm 1oz Cu
T
= 25°C
T
= 25°C
amb
amb
100
10
1
100
80
60
40
20
0
Single pulse
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
1.0
25mm x 25mm 1oz Cu
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
140.0
120.0
100.0
80.0
3
Tamb=25°C
2oz copper
2
1
0
1oz copper
1oz copper
2oz copper
60.0
Tamb=25°C
500
40.0
0
500
1000
1500
2000
2500
0
1000
1500
2000
2500
Copper Area (sqmm)
Copper Area (sqmm)
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© Diodes Incorporated
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
45
60
100
45
60
80
6
Typ
Max
Unit
Test Condition
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
Collector-Base
—
—
V
BVCBO
IC = 100µA
Breakdown Voltage
Collector-Emitter
—
—
—
V
BVCEO
IC = 10mA
Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
—
—
—
V
BVEBO
ICBO
IE = 100µA
0.1
20
VCB = 30V
VCB = 30V, TA = +150°C
VEB = 5V
—
µA
nA
—
20
IEBO
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, IB = 50mA
25
40
25
—
250
—
—
—
—
All versions
Static Forward Current Transfer
Ratio (Note 11)
—
hFE
10 gain grp
16 gain grp
63
100
—
—
—
—
160
250
0.5
Collector-Emitter Saturation Voltage (Note 11)
V
V
VCE(sat)
VBE(on)
Base-Emitter Turn-On Voltage (Note 11)
—
—
1.0
IC = 500mA, VCE = 2V
IC = 50mA, VCE = 10V
f = 100MHz
Transition Frequency
Output Capacitance
fT
150
—
—
—
MHz
pF
Cobo
—
25
VCB = 10V, f = 1MHz
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0.8
250
200
0.6
0.4
150
100
0.2
0
50
0
0
1
2
3
4
5
0.001
0.01
0.1
1
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage
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BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
1.2
1.0
0.4
0.3
0.8
0.6
0.4
0.2
0.1
0.2
0
0
0.0001 0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
140
120
100
80
0.8
0.6
0.4
0.2
0
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 6 Typical Capacitance Characteristics
300
250
200
150
100
V
= 5V
CE
50
0
f = 100MHz
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
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BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D1
c
SOT89
Dim Min Max
Typ
1.50
0.56
0.48
0.38
4.50
A
B
B1
c
1.40
0.50
0.42
0.35
4.40
1.62
1.61
2.40
2.05
-
1.60
0.62
0.54
0.43
4.60
H
E
D
D1
D2
E
E2
e
1.83 1.733
B1
L
B
1.81
2.60
2.35
-
1.71
2.50
2.20
1.50
4.10
2.78
1.05
e
D2
H
H1
L
3.95
2.63
0.90
4.25
2.93
1.20
8
°
(
4
X
)
H1
E2
L1 0.327 0.527 0.427
0.20 0.40 0.30
All Dimensions in mm
A
z
L1
D
z
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Value
Dimensions
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Y3
Y1
Y4
X
G
Y
Y2
C
X1
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BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
BCX54 /55 /56
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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Datasheet Number: DS35369 Rev. 8 - 2
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