BCX54TR [CENTRAL]
暂无描述;
| 型号： | BCX54TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
BCX54
BCX55
BCX56
Central
Semiconductor Corp.
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BCX54,
BCX55, and BCX56 types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (T =25°C)
A
BCX54
BCX55
BCX56
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
45
60
100
V
CBO
CEO
EBO
45
60
80
V
5.0
1.0
1.5
100
200
1.2
V
I
A
C
Peak Collector Current
Base Current
I
A
CM
I
mA
mA
W
B
Peak Base Current
Power Dissipation
I
BM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
104
°C
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
µA
nA
V
I
I
I
V
V
V
=30V
100
10
CBO
CBO
EBO
CB
CB
EB
=30V, T =125°C
A
=5.0V
100
BV
BV
BV
BV
BV
BV
I =100µA (BCX54)
45
60
CBO
CBO
CBO
CEO
CEO
CEO
CE(SAT)
BE(ON)
FE
C
I =100µA (BCX55)
V
C
I =100µA (BCX56)
100
45
V
C
I =10mA (BCX54)
V
C
I =10mA (BCX55)
60
V
C
I =10mA (BCX56)
80
V
C
V
V
I =500mA, I =50mA
0.5
1.0
V
C
B
V
=2.0V, I =500mA
V
CE
CE
CE
CE
B
h
h
h
V
V
V
=2.0V, I =5.0mA
63
63
C
=2.0V, I =150mA
250
160
250
FE
C
=2.0V, I =150mA
FE
C
(BCX54-10, BCX55-10, BCX56-10)
63
h
V
=2.0V, I =150mA
CE C
FE
FE
(BCX54-16, BCX55-16, BCX56-16) 100
h
V
V
=2.0V, I =500mA
40
CE
C
f
=5.0V, I =10mA, f=100MHz
130
MHz
T
CE
C
R1 ( 18-December 2001)
TM
BCX54
BCX55
BCX56
Central
Semiconductor Corp.
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
A
E
B
G
F
H
1
2
3
C
J
K
R3
L
M
BOTTOM VIEW
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
BCX54
BA
BC
BD
BE
BG
BM
BH
BK
BL
BCX54-10
BCX54-16
BCX55
BCX55-10
BCX55-16
BCX56
BCX56-10
BCX56-16
R1 ( 18-December 2001)
相关型号：
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