BC857BT-7 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | BC857BT-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Die Construction
SOT-523
Complementary NPN Types Available
(BC847AT, BT, CT)
Dim Min Max Typ
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
A
·
Ultra-Small Surface Mount Package
C
Mechanical Data
C
B
TOP VIEW
¾
¾
0.50
·
·
Case: SOT-523, Molded Plastic
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
E
B
Case material - UL Flammability Rating
Classification 94V-0
G
H
·
·
Moisture sensitivity: Level 1 perJ-STD-020A
K
L
K
J
Terminals: Solderable per MIL-STD-202,
Method 208
M
·
·
·
Terminal Connections: See Diagram
Weight: 0.002 grams (approx.)
M
N
a
L
D
a
Marking Codes (See Table Below & Diagrams
on Page 2)
0°
8°
¾
All Dimensions in mm
·
Ordering & Date Code Information: See Page 2
Type
Marking
3V
BC857AT
BC857BT
BC857CT
3W
3G
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-45
-5.0
V
-100
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 1)
150
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
833
Tj, TSTG
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
DS30275 Rev. 2 - 2
1 of 2
BC857AT, BT, CT
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
V(BR)CBO
-50
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
-45
—
V
V(BR)EBO
-5
—
V
IE = 1mA, IC = 0
DC Current Gain (Note 2)
Current Gain A
B
125
220
420
—
290
520
250
475
800
hFE
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
—
C
—
—
-300
-650
VCE(SAT)
—
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
mV
mV
mV
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
VBE(SAT)
—
-700
-900
—
—
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
VBE(ON)
—
—
—
-750
-820
VCB = -30V
VCB = -30V, TA = 150°C
—
—
—
-15
-4.0
NA
µA
Collector-Cutoff Current (Note 2)
ICBO
fT
—
100
—
VCE = -5.0V, IC = -10mA,
f = 100MHz
Gain Bandwidth Product
Output Capacitance
—
—
—
MHz
pF
VCB = -10V, f = 1.0MHz
COB
4.5
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KW, f = 1.0KHz,
BW = 200Hz
Noise Figure
NF
—
—
10
dB
(Note 3)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
Shipping
BC857AT-7
BC857BT-7
BC857CT-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details: go to ourwebsite at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
XXYM
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30275 Rev. 2 - 2
2 of 2
BC857AT, BT, CT
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