BC857BT-7-F [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | BC857BT-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: BC847AT BC857BT BC857CT
Pb
BC857AT, BT, CT
Lead-free
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
Epitaxial Die Construction
·
Complementary NPN Types Available
(BC847AT, BT, CT)
SOT-523
·
·
·
Ultra-Small Surface Mount Package
A
Dim Min Max Typ
Lead Free/RoHS Compliant (Note 2)
A
B
C
D
G
H
J
C
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
Qualified to AEC-Q101 Standards for High Reliability
C
B
TOP VIEW
¾
¾
0.50
Mechanical Data
E
B
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
G
H
·
Case: SOT-523
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
K
L
Terminals: Solderable per MIL-STD-202, Method 208
J
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
L
D
M
N
a
·
·
·
·
Terminal Connections: See Diagram
0°
8°
¾
Marking Codes (See Table Below & Diagrams on Page 2)
Ordering & Date Code Information: See Page 2
Weight: 0.002 grams (approximate)
All Dimensions in mm
Type
Marking
3V
BC857AT
BC857BT
BC857CT
3W
3G
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-45
-5.0
-100
150
833
V
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 1)
R
qJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30275 Rev. 8 - 2
1 of 3
BC857AT, BT, CT
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
—
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage (Note 3)
-50
-45
-5
IC = 10mA, IB = 0
—
—
V
IE = 1mA, IC = 0
—
—
V
DC Current Gain (Note 3)
Current Gain A
125
220
420
—
290
520
250
475
800
hFE
B
C
VCE = -5.0V, IC = -2.0mA
—
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
—
mV
mV
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-700
-900
—
—
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
—
—
—
-750
-820
VCB = -30V
—
—
—
—
-15
NA
µA
Collector-Cutoff Current (Note 3)
VCB = -30V, TA = 150°C
ICBO
fT
-4.0
VCE = -5.0V, IC = -10mA,
f = 100MHz
Gain Bandwidth Product
Output Capacitance
100
—
—
—
—
MHz
pF
VCB = -10V, f = 1.0MHz
COB
4.5
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KW, f = 1.0KHz,
BW = 200Hz
Noise Figure
NF
—
—
10
dB
Notes:
3. Short duration pulse test used to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
Shipping
BC857AT-7-F
BC857BT-7-F
BC857CT-7-F
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
XXYM
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011 2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30275 Rev. 8 - 2
2 of 3
www.diodes.com
BC857AT, BT, CT
250
200
150
100
50
0.5
I
C
= 10
I
B
0.4
0.3
T
A
= 25°C
0.2
T = 150°C
A
0.1
T = -50°C
A
0
0
200
0
175
25
50
150
100 125
75
1000
0.1
1
10
100
T , AMBIENT TEMPERATURE (°C)
A
I , COLLECTOR CURRENT (mA)
C
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
1000
100
10
T = 150°C
A
V
CE
= 5V
V
= 5V
CE
100
10
1
T
A
= 25°C
T = -50°C
A
10
1
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs. Collector Current
Fig. 4, Gain Bandwidth Product vs Collector Current
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodes Incorporatedand all thecompanies whoseproducts arerepresentedonourwebsite, harmless againstall damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President ofDiodes Incorporated.
DS30275 Rev. 8 - 2
3 of 3
BC857AT, BT, CT
www.diodes.com
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