BAV756DW [DIODES]
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY; 四表面贴装开关二极管阵列
| 型号： | BAV756DW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
A
·
·
·
·
·
Fast Switching Speed
SOT-363
C2
C1
A1
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
C
B
B
One BAV70 Circuit and One BAW56 Circuit In
One Package
A2
A1
C2
C
D
0.65 Nominal
H
·
Easily Connected As F.W. Bridge
E
0.30
1.80
1.80
¾
0.40
2.20
2.20
0.10
1.00
0.40
0.25
K
J
M
G
H
Mechanical Data
·
·
Case: SOT-363, Molded Plastic
L
D
F
J
Terminals: Solderable per MIL-STD-202,
Method 208
C1
A1
C2
K
0.90
0.25
0.10
Marking
L
·
·
·
Polarity: See Diagram
Marking: KCA
Indicates
KXX
M
Orientation
All Dimensions in mm
Weight: 0.006 grams (approx.)
A1
A2
C2
@ T = 25°C unless otherwise specified
A
Maximum Ratings
Characteristic
Symbol
BAV756DW
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
75
VR(RMS)
IFM
RMS Reverse Voltage
53
V
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
300
150
mA
mA
IO
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
2.0
1.0
IFSM
A
Pd
Power Dissipation (Note 1)
200
625
mW
K/W
°C
RqJA
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Test Condition
IF = 1.0mA
0.715
IF = 10mA
IF = 50mA
IF = 150mA
0.855
1.0
1.25
VFM
Maximum Forward Voltage
¾
V
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
2.5
50
30
25
mA
mA
mA
nA
IRM
Maximum Peak Reverse Current
¾
VR = 0, f = 1.0MHz
Cj
trr
Junction Capacitance
¾
¾
2.0
4.0
pF
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
Notes:
1. Valid provided that terminals are kept at ambient temperature.
DS30148 Rev. B-1
1 of 2
BAV756DW
1000
100
10
10,000
1000
100
1.0
10
0.1
VR = 20V
1
0.01
0
100
Tj, JUNCTION TEMPERATURE (°C)
200
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
Fig. 2 Leakage Current vs Junction Temperature
DS30148 Rev. B-1
2 of 2
BAV756DW
相关型号：
BAV756DW-T1-LF
Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
WTE
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