APR34330MPTR-G1_技术文档

A Product Line of

Diodes Incorporated

APR34330

SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

Description

Pin Assignments

APR34330 is a secondary side Combo IC, which combines an N-

Channel MOSFET and a driver circuit designed for synchronous

rectification (SR) in DCM operation. It also integrates output voltage

detect function for primary side control system.

(Top View)

DRISR

GND

8

1

2

3

4

The N-Channel MOSFET has been optimized for low gate charge,

low R_DS(ON), fast switching speed and body diode reverse recovery

performance.

VDET

AREF

VCC

7

6

5

GND

The synchronous rectification can effectively reduce the secondary

side rectifier power dissipation and provide high performance solution.

By sensing MOSFET drain-to-source voltage, APR34330 can output

ideal drive signal with less external components. It can provide high

performance solution for 5V output voltage application.

DRAIN

Note: The DRAIN pin of internal MOSFET is exposed PAD, which is at the bottom

of IC (the dashed box). The secondary current should flow from GND(pin 6,7,8) to

this exposed PAD.

Same as AP4341, APR34330 detects the output voltage and provides

a periodical signal when the output voltage is lower than a certain

threshold. By fast response to secondary side voltage, APR34330

can effectively improve the transient performance of primary side

control system.

SO-8EP

The APR34330 is available in SO-8EP package.

Applications

•

Adapters/Chargers for Cell/Cordless Phones, ADSL Modems, MP3

and Other Portable Apparatus

Standby and Auxiliary Power Supplies

Features

•



Synchronous Rectification for DCM Operation Flyback

Eliminate Resonant Ring Interference

Fast Detector of Supply Voltages

Fewest External Components

Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

Typical Applications Circuit

C21 C22

+

C23

R21

APR34330

DRAIN

GND

DRAIN

R23

R24

DRISR

VDET

GND

VCC

C24

AREF

C_AREF

R_AREF

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Pin Descriptions

Pin Number

Pin Name

Function

1

DRISR

Synchronous rectification MOSFET drive

Synchronous rectification sense input and dynamic function output, connected to DRAIN

through a resistor

2

3

VDET

AREF

Program a voltage reference with a resistor from AREF to GND, to enable synchronous

rectification MOSFET drive signal

4

VCC

DRAIN

GND

Power supply, connected with system output

5

Drain pin of internal MOSFET. The Drain voltage signal can obtain from this pin.

Source pin of internal MOSFET, connected to Ground

6,7,8

Drain pin of internal MOSFET. The secondary current should flow from GND (pin 6.7.8)

to this DRAIN pad.

Exposed PAD

DRAIN

Functional Block Diagram

VCC

4

V_REF

I_OVP

Dynamic

Integrator

(V_DET-V_CC)*t_ONP

OVP

I_AREF

Counter

t_ONPDET

3

AREF

OSC

1

SRDRIVER

DRISR

6,7,8

GND

5, EP

DRAIN

2

VDET

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Absolute Maximum Ratings (Note 4)

Symbol

Parameter

Value

-0.3 to 7.5

-2 to 50

-0.3 to 6

15

Unit

V

V_CC

Supply Voltage

V_DET,V_DRAIN

Voltage at VDET, DRAIN Pin

Voltage at AREF, DRISR Pin

Continuous Drain Current

Pulsed Drain Current

V

V_AREF,V_DRISR

V

I_D

A

I_DM

P_D

θ_JA

60

A

Power Dissipation at T_A=+25ºC

2

W

Thermal Resistance (Junction to Ambient)

56

ºC /W

(Note 5)

Thermal Resistance (Junction to Case)

(Note 5)

θ_JC

T_J

14

+150

ºC /W

ºC

Operating Junction Temperature

Storage Temperature

T_STG

T_LEAD

-65 to +150

+300

ºC

Lead Temperature (Soldering, 10 sec)

ºC

Notes: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.

Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.

5. FR-4 substrate PC board, 2oz copper, with 1 inch²pad layout.

Recommended Operating Conditions

Symbol

V_CC

Parameter

Min

3.3

-40

Max

6

Unit

V

Supply Voltage

Ambient Temperature

T_A

+85

ºC

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Electrical Characteristics (@T_A= +25°C, V_CC=5V, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supply Voltage ( VCC Pin )

I_STARTUP

I_OP

Startup Current

Operating Current

V_CC=V_STARTUP-0.1V

–

90

150

μA

VDET pin floating

V_CC=V_TRIGGER+20mV

40

100

V_STARTUP

Startup Voltage

UVLO

–

2.6

2.3

3.1

2.8

3.4

3.1

V

–

Dynamic Output Section/Oscillator Section

V_TRIGGER

–

Internal Trigger Voltage

Duty Cycle

–

5.25

4

5.3

15

30

5.35

18

V

%

μs

–

t_OSC

Oscillation Period

V_CC=5V

18

37.5

V_CC=V_TRIGGER, VCC/VDET pin is

separately connected to a 20Ω

resistor

–

Output Maximum Current

30

60

80

mA

t_DIS

V_DIS

Minimum Period

–

18

5.28

1.5

30

5.44

3

37.5

5.52

4.5

–

ms

V

Discharge Voltage

–

I_DIS

Discharge Current

V_CC=V_DIS+0.1V

mA

mV

V

V_DIS-V_TRIGGER

V_OVP

Trigger Discharger Gap

Overshoot Voltage for Discharge

–

110

5.9

5.8

6.0

V_CC=V_OVP+0.1V, VCC pin is

connected to a 20Ω resistor

I_OVP

Overshoot Current for Discharge

40

–

100

mA

Synchronous Voltage Detect

V_THON

V_THOFF

t_DON

Gate Turn On Threshold

–

0

-25

–

-15

70

100

50

1.8

–

1

V

mV

ns

Gate Turn Off Threshold

Turn-on Delay Time

–

-5

From V_THONto V_DRISR=1V

From V_THOFFto V_DRISR=3V

From 1V to 3V, C_L=4.7nF

From 3V to 1V, C_L=4.7nF

(V_DET-V_CC)*t_ONP= 25Vµs

(V_DET-V_CC)*t_ONP= 50Vµs

V_CC=5V

130

150

100

2.0

5

t_DOFF

Turn-off Propagation Delay Time

Gate Turn-on Rising Time

Gate Turn-off Falling Time

–

t_RG

–

t_FG

–

t_{LEB_S}

t_{LEB_L}

V_{DRISR_HIGH}

0.9

–

Minimum On Time

μs

Drive Output Voltage

3.7

–

V

SR Minimum Operating Voltage

(Note 6)

V_{S_MIN}

–

4.5

t_{OVP_LAST}

Kqs

Added OVP Discharge Time

(Note 7)

–

2.0

–

ms

0.325

–

0.515

mA*μs

(V_DET-V_CC)*t_ONP= 25Vµs

Notes 6: This item specifies the minimum SR operating voltage of V_{IN_DC}, V_{IN_DC}≥N_PS*V_{S_MIN.}

7: This item is used to specify the value of R_AREF

.

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Electrical Characteristics (@T_A=+25°C, unless otherwise specified. Cont.)

MOSFET Static Characteristics

Parameters

Symbol

V_DSS(BR)

V_GS(TH)

I_DSS

Conditions

V_GS=0V, I_D=0.25mA

V_DS=V_GS, I_D=0.25mA

V_DS=50V, V_GS=0V

V_GS=10V, V_DS=0V

V_GS=4.5V, I_D=3A

Min

50

–

Typ

56

0.85

6

Max

Unit

V

Drain to Source Breakdown

Voltage

–

2

Gate Threshold Voltage

V

Zero Gate Voltage Drain

Current

–

1000

±10

36

nA

μA

Gate to Source Leakage

Current

I_GSS

–

1

–

32

36

Drain to Source On-state

Resistance

R_DS(ON)

mΩ

V_GS=4.5V, I_D=15A

–

42

MOSFET Dynamic Characteristics

Parameters

Input Capacitance

Symbol

Conditions

Min

–

Typ

661

52

Max

–

Unit

C_iss

C_oss

C_rss

Q_gs

Q_gd

Q_g

Output Capacitance

V_GS=0V, V_DS=25V, f=1MHz

–

pF

Reverse Transfer Capacitance

Gate to Source Charge

–

45

–

1.4

2.9

7.5

2.15

–

V_GS=0V to 10V, V_DD=25V,

I_D=15A

Gate to Drain Charge (Miller

Charger)

–

nC

Total Gate Charge

Gate Resistance

V_GS=4.5V

–

Ω

R_g

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Performance Characteristics

Startup Voltage vs. Temperature

UVLO vs. Temperature

3.5

3.0

2.5

2.0

1.5

1.0

3.4

3.2

3.0

2.8

2.6

-40

-20

0

20

40

60

80

100

120

140

-40

-20

0

20

40

60

80

100

120

140

Temperature (^oC)

Internal Trigger Voltage vs. Temperature

Internal Trigger Current vs. Temperature

100

90

80

70

60

50

40

30

20

10

0

5.4

5.3

5.2

5.1

5.0

4.9

4.8

4.7

-40

-20

0

20

40

60

80

100

120

140

-40

-20

0

20

40

60

80

100

120

140

Temperature (^oC)

Overshoot Voltage for Discharge vs. Temperature

Overshoot Current for Discharge vs. Temperature

160

140

120

100

80

6.0

5.8

5.6

5.4

5.2

5.0

60

40

20

0

-40

-20

0

20

40

60

80

100

120

140

-40

-20

0

20

40

60

80

100

120

140

Temperature (^oC)

6 of 13

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Performance Characteristics (Cont.)

Gate Turn Off Threshold vs. Temperature

Kqs (See Note 7) vs. Temperature

0

-5

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

-10

-15

-20

-25

-30

-35

-40

-20

0

20

40

60

80

100

120

140

-40

-20

0

20

40

60

80

100

120

140

Temperature (^oC)

Operating Current vs. Temperature

Drain to Source On-state Resistance vs. Temperature

100

90

80

70

60

50

40

30

20

10

0

140

120

100

80

60

40

20

0

-40

-20

0

20

40

60

80

100

120

140

-40

-20

0

20

40

60

80

100

120

140

Temperature (^oC)

7 of 13

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Output Voltage Detect Function Description

t_OSC

t_DIS

VDET

VCC

V_OVP

V_DIS

V_TRIGGER

V_OFF

V_ON

UVLO

t_{OVP_LAST}

I_OVP

I_DIS

I_VCC

Figure 1. Typical Waveforms of APR34330

When V_CCis beyond power-on voltage (V_ON), the APR34330 starts up. The VDET pin asserts a periodical pulse and the oscillation period is t_OSC

.

When V_CCis beyond the trigger voltage (V_TRIGGER), the periodical pulse at VDET pin is discontinued. When V_CCis beyond the discharge voltage

(V_DIS), the discharge circuit will be enabled, and a 3mA current (I_DIS) will flow into VCC pin. When V_CCis higher than the overshoot voltage (V_OVP),

the APR34330 will enable a discharge circuit, the discharge current (I_OVP) will last t_{OVP_LAST}time. After the t_{OVP_LAST}time, APR34330 will stop the

discharge current and detect V_CCvoltage again. If V_CCis still higher than V_OVP, the t_{OVP_LAST}time discharge current will be enabled again. Once the

OVP discharge current is asserted, the periodical pulse at VDET pin will be disabled.

When the V_CCfalls below the power-off voltage (V_OFF), the APR34330 will shut down.

Operation Description

MOSFET Driver

The operation of the SR is described with timing diagram shown in Figure 2. APR34330 monitors the MOSFET drain-source voltage. When the

drain voltage is lower than the turn-on threshold voltage V_THON, the IC outputs a positive drive voltage after a turn-on delay time (t_DON). The

MOSFET will turn on and the current will transfer from the body diode into the MOSFET’s channel.

In the process of drain current decreasing linearly toward zero, the drain-source voltage rises synchronically. When it rises over the turn-off

threshold voltage V_THOFF, APR34330 pulls the drive signal down after a turn-off delay (t_DOFF).

I,V

V_DET

I_S

V_THON

0

t

V_THOFF

V_DRISR

0.9V_DRISR

0.1V_DRISR

t_RG

0.1V_DRISR

0

t

t_FG

t_DON

t_DOFF

Figure 2. Typical Waveforms of APR34330

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Operation Description (Cont.)

Minimum On Time

When the controlled MOSFET gate is turned on, some ringing noise is generated. The minimum on-time timer blanks the V_THOFFcomparator,

keeping the controlled MOSFET on for at least the minimum on time. If V_THOFFfalls below the threshold before minimum on time expires, the

MOSFET will keep on until the end of the minimum on time.

The minimum on time is in direct proportion to the (V_DET-V_CC)*t_ONP. When (V_DET-V_CC)*t_ONP=5V*5μs, the minimum on time is about 1.8μs.

The Value and Meaning of AREF Resistor

As to DCM operation Flyback converter, after secondary rectifier stops conduction the primary MOSFET Drain-to-source ringing waveform is

resulted from the resonant of primary inductance and equivalent switch device output capacitance. This ringing waveform probably leads to

Synchronous Rectifier error conduction. To avoid this fault happening, APR34330 has a special function design by means of volt-second product

detecting. From the sensed voltage of VDET pin to see, the volt-second product of voltage above VCC at primary switch on time is much higher

than the volt-second product of each cycle ringing voltage above V_CC. Therefore, before every time Synchronous Rectifier turning on, APR34330

judges if the detected volt-second product of VDET voltage above V_CCis higher than a threshold and then turn on synchronous Rectifier. The

purpose of AREF resistor is to determine the volt-second product threshold. APR34330 has a parameter, Kqs, which converts R_AREFvalue to volt-

second product,

Area2  R_AREF*Kqs

In general, Area1 and Area3, the value of which should be test on system, depend on system design and are always fixed after system design

frozen. As to BCD PSR design, the Area1 value changes with primary peak current value and Area3 value generally keeps constant at all of

conditions. So the AREF resistor design should consider the worst case, the minimum primary peak current condition. Since of system design

parameter distribution, Areas1 and Area3 have moderate tolerance. So Area2 should be designed between the middle of Area1 and Area3 to keep

enough design margin.

Area3 R_AREF*Kqs  Area1

Area1=(V_DET-V_CC)*t_ONP

Area3

V_DET

V_CC

Area2=Kqs*R_AREF

Figure 3. AREF Function

SR Minimum Operating Voltage

APR34330 sets a minimum SR operating voltage by comparing the difference between V_DETand output voltage (V_CC). The value of V_DET–V_CCmust

be higher than its internal reference, then APR34330 will begin to integrate the area of (V_DET–V_CC)*t_ONP. If not, the area integrating will not begin

and the SR driver will be disabled.

SR Turning off Timing Impact on PSR CV Sampling

As to synchronous rectification on Flyback power system, SR MOSFET need to turn off in advance of secondary side current decreasing to zero to

avoid current flowing reversely. When SR turns off in advance, the secondary current will flow through the body diode. The SR turning off time is

determined by the V_THOFFat a fixed system. When V_THOFFis more close to zero, the SR turning on time gets longer and body diode conduction time

gets shorter. Since of the different voltage drop between SR MOSFET and body diode, the PSR feedback signal V_FBappears a voltage jump at the

time of SR MOSFET turning off. If the PSR CV sampling time t_SAMPLEis close to even behind this voltage jump time, there will be system unstable

operation issue or the lower output voltage issue.

9 of 13

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Operation Description (Cont.)

To ensure stable operating of system, it must be met:

t_BODYDIODE<t_ONS*(1- t_SAMPLE

)

t_SAMPLE

SR Turnoff,

Bodydiode operating

SR Operating

t_BODYDIODE

V_FB

t_ONS

Figure 4. SR Turning off Timing Impact on PSR CV Sampling

Recommended Application Circuit Parameters

The two resistors R23 and R24 are used to pass ESD test. The value of R23 and R24 should be over 20Ω and below 47Ω respectively because of

the undershoot performance. The package of R23 and R24 should be at least 0805 and there isn’t any trace under these two resistors.

C_AREFis suggested to parallel with AREF resistor to keep the volt-second product threshold stable. And the recommended value of C_AREFis 100nF.

The recommended value of C24 is 100nF.

Ordering Information

APR34330 XX XX - XX

Product Name

RoHS/Green

G1 : Green

Package

Packing

MP: SO-8EP

TR : Tape & Reel

Package

Temperature Range

-40 to +85C

Part Number

Marking ID

34330MP-G1

Packing

SO-8EP

APR34330MPTR-G1

4000/Tape & Reel

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Marking Information

(Top View)

First and Second Lines: Logo and Marking ID

Third Line: Date Code

Y: Year

WW: Work Week of Molding

A: Assembly House Code

XX: 7^thand 8^thDigits of Batch No.

34330

MP-G1

YWWAXX

-

Package Outline Dimensions (All dimensions in mm(inch).)

(1) Package Type: SO-8EP

3.800(0.150)

4.000(0.157)

2.110(0.083)

2.710(0.107)

4.700(0.185)

1.270(0.050)

TYP

5.100(0.201)

0.300(0.012)

0.510(0.020)

0.050(0.002)

0.150(0.006)

5.800(0.228)

6.200(0.244)

1.350(0.053)

1.550(0.061)

0.400(0.016)

1.270(0.050)

0.150(0.006)

0.250(0.010)

Note: Eject hole, oriented hole and mold mark is optional.

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APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

Suggested Pad Layout

(1) Package Type: SO-8EP

Y1

G

Z

X1

Y

E

X

Z

G

X

Y

X1

Y1

E

Dimensions

(mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch)

(mm)/(inch)

Value

6.900/0.272 3.900/0.154 0.650/0.026 1.500/0.059

3.600/0.142

2.700/0.106

1.270/0.050

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June 2015

APR34330

Document number: DS37452 Rev. 3 - 2

A Product Line of

Diodes Incorporated

APR34330

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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APR34330

Document number: DS37452 Rev. 3 - 2


型号：	APR34330MPTR-G1
厂家：	DIODES INCORPORATED
描述：	Switching Regulator 开关
文件：	总13页 (文件大小：506K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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