APR34509MPTR-G1 [DIODES]

Analog Circuit,;
APR34509MPTR-G1
型号: APR34509MPTR-G1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Analog Circuit,

光电二极管
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APR34509  
SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER  
Description  
Pin Assignments  
The APR34509 is a secondary side Combo IC, which combines an N-  
Channel MOSFET and a driver circuit designed for synchronous  
rectification (SR), supports CCM, DCM and Quasi-Resonant Flyback  
Topologies.  
(Top View)  
DRISR  
GND  
GND  
8
1
2
3
4
The N-Channel MOSFET has been optimized for low gate charge,  
low RDS(ON), fast switching speed and body diode reverse recovery  
performance.  
VCC  
CCM  
7
6
5
AREF  
DRAIN  
The synchronous rectification can effectively reduce the secondary  
side rectifier power dissipation and provide high performance solution.  
By sensing MOSFET drain-to-source voltage, the APR34509 can  
output ideal drive signal with less external components.  
VDET  
Note: The DRAIN pin of internal MOSFET is exposed PAD, which is at the bottom  
of IC (the dashed box). The secondary current should flow from GND(pin 7,8) toth  
is exposed PAD.  
It can provide high performance solution for 5V to 12V output voltage  
application.  
SO-8EP  
The APR34509 is available in SO-8EP package.  
Applications  
Features  
Synchronous Rectification for DCM Operation Flyback  
Eliminate Resonant Ring Interference  
Fast Detector of Supply Voltages  
Fewest External Components  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. GreenDevice (Note 3)  
Adapters/Chargers for Cell/Cordless Phones, ADSL Modems, MP3  
and Other Portable Apparatus  
Standby and Auxiliary Power Supplies  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
Typical Applications Circuit  
C21 C22  
+
+
C23  
R21  
D1  
Primary  
Control  
IC  
Q1  
CY  
APR34509  
R1  
DRAIN  
GND  
GND  
DRAIN  
R23  
R24  
DRISR  
VDET  
VCC  
C24  
AREF  
CCM  
CCCM  
R2  
ZD2  
ZD1  
CAREF  
RAREF  
R3  
1 of 12  
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May 2017  
© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Pin Descriptions  
Pin Number  
Pin Name  
Function  
1
DRISR  
Synchronous rectification MOSFET drive.  
2
3
VCC  
CCM  
Power supply, connected with system output.  
Primary trigger signal sense input.  
Synchronous rectification sense input and dynamic function output, connected to DRAIN  
through a resistor.  
4
VDET  
DRAIN  
AREF  
GND  
5
Drain pin of internal MOSFET. The Drain voltage signal can obtain from this pin.  
Program a voltage reference with a resistor from AREF to GND, to enable synchronous  
rectification MOSFET drive signal.  
6
7, 8  
Source pin of internal MOSFET, connected to Ground.  
Drain pin of internal MOSFET. The secondary current should flow from GND (pin 7, 8)  
to this DRAIN pad.  
Exposed PAD  
DRAIN  
Functional Block Diagram  
VCC  
DRAIN  
2
5, EP  
VDD  
Test  
Mode  
Fault  
Mode  
Power  
OK  
Regulator  
VREF  
IAREF  
AREF  
6
VCC  
Integrator  
(VDET-  
VCC)dt  
S
R
Q
1
S
R
Q
DRISR  
Drive  
VTHON  
Gate  
Monitor  
LEB  
Time  
VDET  
4
VTHOFF  
VTHCCM  
7,8  
GND  
3
CCM  
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© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Absolute Maximum Ratings (Note 4)  
Symbol  
Parameter  
Value  
-0.3 to 16  
-2 to 60  
-0.3 to 16  
20  
Unit  
V
Supply Voltage  
VCC  
Voltage at VDET, DRAIN Pin  
Voltage at AREF, DRISR Pin  
Continuous Drain Current  
Pulsed Drain Current  
V
VDET, VDRAIN  
V
VAREF, VDRISR  
A
ID  
80  
A
IDM  
PD  
2.2  
W
Power Dissipation at TA = +25°C  
Thermal Resistance (Junction to Ambient)  
(Note 5)  
56  
12  
°C /W  
°C /W  
θJA  
θJC  
Thermal Resistance (Junction to Case)  
(Note 5)  
Operating Junction Temperature  
Storage Temperature  
+150  
-65 to +150  
+300  
°C  
°C  
°C  
TJ  
TSTG  
TLEAD  
Lead Temperature (Soldering, 10 sec)  
Notes: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.  
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.  
5. FR-4 substrate PC board, 2oz copper, with 1 inch2 pad layout.  
Recommended Operating Conditions  
Symbol  
VCC  
Parameter  
Min  
3.3  
-40  
Max  
13  
Unit  
V
Supply Voltage  
Ambient Temperature  
+85  
°C  
TA  
3 of 12  
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May 2017  
© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Electrical Characteristics (@TA = +25°C, VCC = 5V, unless otherwise specified.)  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Unit  
Supply Voltage ( VCC Pin )  
ISTARTUP  
IOP  
Startup Current  
Operating Current  
VCC = VSTARTUP-0.1V  
100  
100  
150  
150  
µA  
µA  
VDET Pin Floating  
VCC = 5V  
VSTARTUP  
Startup Voltage  
UVLO  
3.1  
2.8  
V
V
Gate Driver  
VTHON  
VTHOFF  
tDON  
Gate Turn On Threshold  
Gate Turn Off Threshold  
Turn On Delay Time  
0
-20  
-11.5  
70  
100  
50  
20  
1.6  
1
V
mV  
ns  
ns  
ns  
ns  
µs  
V
-3  
From VTHON to VDRISR = 1V  
From VTHOFF to VDRISR = 4V  
From 1V to 4V, VCC = 5V, CL = 4.7nF  
From 4V to 1V, VCC = 5V, CL = 4.7nF  
130  
150  
100  
35  
tDOFF  
tRG  
Turn Off Propagation Delay Time  
Turn On Rising Time  
tFG  
Turn Off Falling Time  
tON_MIN  
Minimum On Time  
1.2  
2
VCC  
VCC  
VDRI_HIGH  
Drive Maximum Voltage  
VDRISR  
VCC < 5V  
VCC >= 5V  
VDRI_HOLD  
SR Drive Hold Voltage  
V
5
mA*  
Kqs  
VS_MIN  
(Note 6)  
0.32  
0.42  
0.52  
4.5  
μs  
Synchronous Rectification (SR)  
V
Minimum Operating Voltage (Note 7)  
Synchronous Rectification Detection  
VTH_CCM VDRISR Rising Threshold  
tDCCM  
CCM Propagation Delay  
VDRISR Output Transitions From  
High to Low  
0.43  
0.53  
20  
0.63  
35  
V
From CCM Rising to VDRISR Falling  
10%  
ns  
Notes: 6. This item is used to specify the value of RAREF  
.
7. This item specifies the minimum SR operating voltage of VIN_DC, VIN_DC≥NPS*VS_MIN.  
4 of 12  
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APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Electrical Characteristics (@TA =+25°C, unless otherwise specified. Cont.)  
MOSFET Static Characteristics  
Symbol  
VDSS(BR)  
VGS(TH)  
IDSS  
Parameter  
Condition  
VGS = 0V, ID = 0.25mA  
VDS = VGS, ID = 0.25mA  
VDS = 50V, VGS = 0V  
Min  
60  
0.7  
Typ  
Max  
Unit  
V
Drain to Source Breakdown  
Voltage  
2
1
Gate Threshold Voltage  
1.3  
V
Zero Gate Voltage Drain  
Current  
µA  
Gate to Source Leakage  
Current  
IGSS  
VGS = 4.5V, VDS = 0V  
VGS = 4.5V, ID = 3A  
±50  
µA  
Drain to Source On-state  
Resistance  
RDS(ON)  
8
mΩ  
MOSFET Dynamic Characteristics  
Symbol  
Ciss  
Parameter  
Condition  
Min  
Typ  
1872  
506  
Max  
Unit  
Input Capacitance  
Output Capacitance  
Coss  
VGS = 0V, VDS = 25V, f =1MHz  
pF  
Reverse Transfer  
Capacitance  
Crss  
Qgs  
Qgd  
43  
3.1  
4.8  
Gate to Source Charge  
VGS = 0V to 10V, VDD = 25V,  
ID=15A  
Gate to Drain Charge (Miller  
Charger)  
nC  
Qg  
Rg  
Total Gate Charge  
Gate Resistance  
VGS = 4.5V  
15  
1.8  
Ω
5 of 12  
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May 2017  
© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Synchronous Rectification Principle Description  
SR MOSFET Turn On  
The APR34509 determines the synchronous rectification MOSFET turning on time by monitoring the MOSFET drain-to-source voltage. For both of  
DCM and CCM operation, the turning on principle is same. When the drain voltage is lower than the turn-on threshold voltage VTHON, the IC  
outputs a positive drive voltage after a turn-on delay time (tDON). The MOSFET will turn on and the current will transfer from the body diode into  
the MOSFET’s channel. Since of parasitic parameter, the voltage on MOSFET drain pin has moderate voltage ringing at this moment, which  
maybe impact on SR controller VDET voltage sense and bring about turning off fault. To avoid fault situation happening, a Minimum On Time  
(tONMIN) blanking period is used that will maintain the power MOSFET on for a minimum amount of time.  
In Figure 1, the turn on blanking time tONMIN is to prevent the MOSFET drain-to-source voltage ringing affect. During this time, the VDRISR is pulled  
up to VCC; after tONMIN, the drive voltage stops being pulled up by the driver, and begins to drop; when VDRISR drops to VDRI_HOLD, it will be held at  
this voltage until being pulled down.  
DCM Turn Off Operation  
The DCM operation of the SR is described with timing diagram shown in Figure 1.  
In the process of drain current decreasing linearly toward zero, the drain-source voltage rises synchronically. When it rises over the turn off  
threshold voltage VTHOFF, the APR34509 pulls the drive signal down after a turn-off delay (tDOFF).  
I,V  
VDET  
IS  
VTHON  
0
VTHOFF  
t
VDRI_HIGH  
VDRI_HOLD  
0.9VGATE  
1V  
0
t
tONMIN  
tDON  
tDOFF  
Figure 1. Typical Waveforms of APR34509 in DCM  
CCM Turn Off Operation  
The CCM pin is used to sense trigger signal for turning off the SR MOSFET before primary switch turning on in Continuous Conduction Mode  
(CCM) system. After tONMIN, if the CCM pin voltage rises over the threshold voltage VTHCCM, the drive voltage will be pulled down after a short  
delay time tDCCM to turn off SR MOSFET. The CCM pin senses trigger signal coming from primary switch turn on signal through a RC networks  
circuit, a Ytype isolating capacitor CCCM, two resistors R2 and R3. Note variations of these resistors, of CCCM, and of the dV/dt across CCCM  
require that worst-case tolerances be taken into account when determining the minimum value of CCCM. For example, the value of this resistor will  
impact the rise time of CCM voltage. The bigger resistor, the slower the CCM voltage rises.  
The zener diode ZD1 is used for ESD test.  
The value of CY should be much higher than that of CCCM. If necessary, increase the value of CY to ensure that CY >> CCCM; do not decrease  
CCCM  
.
CY is the main common-mode capacitance between the primary and the secondary sides of the system. This is usually a discrete component,  
whose value ranges from 47pF to 2200pF. Aside from any EMI-control purposes, it also serves as the return path for the CCM signal charging and  
discharging current pulses.  
6 of 12  
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May 2017  
© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Synchronous Rectification Principle Description (Cont.)  
VGATE_PRIMARY  
0
t
VCCM  
VTH_CCM  
0
t
VDRISR  
VDRI_HIGH  
VDRI_HOLD  
0.9VGATE  
0
t
tDCCM  
Figure 2. Typical Turn Off Waveforms of APR34509 in CCM  
Minimum On Time  
When the controlled MOSFET gate is turned on, some ringing noise is generated. The minimum on-time timer blanks the VTHOFF comparator and  
CCM comparator, keeping the controlled MOSFET on for at least the minimum on time. During the minimum on time, the turn off threshold (DCM  
and CCM) is totally blanked.  
The Value and Meaning of AREF Resistor  
As to DCM operation Flyback converter, after secondary rectifier stops conduction, the primary MOSFET Drain-to-source ringing waveform is  
resulted from the resonant of primary inductance and equivalent switch device output capacitance. This ringing waveform probably leads to  
Synchronous Rectifier error conduction. To avoid this fault happening, the APR34509 has a special function design by means of volt-second  
product detecting. From the sensed voltage of VDET pin to see, the volt-second product of voltage above VCC at primary switch on time is much  
higher than the volt-second product of each cycle ringing voltage above VCC. Therefore, before every time Synchronous Rectifier turning on, the  
APR34509 judges if the detected volt-second product of VDET voltage above VCC is higher than a threshold and then turns on synchronous  
Rectifier. The purpose of AREF resistor is to determine the volt-second product threshold. The APR34509 has a parameter, Kqs, which converts  
RAREF value to volt-second product,  
Area2 RAREF *Kqs  
In general, Area1 and Area3 values depend on system design and are always fixed after system design frozen. As to Diodes PSR design, the  
Area1 value changes with primary peak current value and Area3 value generally keeps constant at all conditions. So the AREF resistor design  
should consider the worst case, the minimum primary peak current condition. Since of system design parameter distribution, Area1 and Area3  
have moderate tolerance. So Area2 should be designed between the middle of Area1 and Area3 to keep enough design margin.  
Note: To keep the volt-second product threshold stable, a capacitor is suggested to parallel with AREF resistor. And the recommended value of  
this capacitor is 10nF.  
Area3RAREF *Kqs Area1  
7 of 12  
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APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Synchronous Rectification Principle Description (Cont.)  
Area1=(VDET-VCC)*tONP  
Area3  
VDET  
VCC  
Area2=Kqs*RAREF  
Figure 3. AREF Function  
SR Minimum Operating Voltage  
The APR34509 sets a minimum SR operating voltage by comparing the difference between VDET and output voltage (VCC). The value of VDET  
VCC must be higher than its internal reference, then the APR34509 will begin to integrate the area of (VDETVCC)*tONP. If not, the area integrating  
will not begin and the SR driver will be disabled.  
SR Turning Off Timing Impact on PSR CV Sampling  
As to synchronous rectification on Flyback power system, SR MOSFET needs to turn off in advance of secondary side current decreasing to zero  
to avoid current flowing reversely. When SR turns off in advance, the secondary current will flow through the body diode. The SR turning off time is  
determined by the VTHOFF at a fixed system. When VTHOFF is more close to zero, the SR turning on time gets longer and body diode conduction  
time gets shorter. Since of the different voltage drop between SR MOSFET and body diode, the PSR feedback signal VFB appears a voltage jump  
at the time of SR MOSFET turning off. If the PSR CV sampling time tSAMPLE is close to even behind this voltage jump time, there will be system  
unstable operation issue or the lower output voltage issue.  
To ensure stable operating of system, it must be met:  
tBODYDIODE<tONS- tSAMPLE  
tSAMPLE  
SR Turnoff,  
Bodydiode operating  
SR Operating  
tBODYDIODE  
VFB  
tONS  
Figure 4. SR Turning Off Timing Impact on PSR CV Sampling  
Recommended Application Circuit Parameters  
The two resistors R23 and R24 are used to pass ESD test. The value of R23 and R24 should be over 20and below 47respectively because of  
the undershoot performance. The package of R23 and R24 should be at least 0805 and there isn’t any trace under these two resistors.  
CAREF is suggested to parallel with AREF resistor to keep the volt-second product threshold stable. And the recommended value of CAREF is 20nF.  
The recommended value of C24 is 100nF.  
8 of 12  
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© Diodes Incorporated  
APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Ordering Information  
APR34509 X X - X  
Product Name  
RoHS/Green  
G1 : Green  
Package  
MP: SO-8EP  
Packing  
TR : Tape & Reel  
Package  
Temperature Range  
-40 to +85C  
Part Number  
Marking ID  
Packing  
SO-8EP  
APR34509MPTR-G1  
34509MP-G1  
4000/Tape & Reel  
Marking Information  
(Top View)  
First and Second Lines: Logo and Marking ID  
Third Line: Date Code  
Y: Year  
WW: Work Week of Molding  
A: Assembly House Code  
XX: 7th and 8th Digits of Batch No.  
34509  
MP-G1  
YWWAXX  
-
9 of 12  
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APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Package Outline Dimensions (All dimensions in mm(inch).)  
(1) Package Type: SO-8EP  
3.800(0.150)  
4.000(0.157)  
2.110(0.083)  
2.710(0.107)  
4.700(0.185)  
1.270(0.050)  
TYP  
5.100(0.201)  
0.300(0.012)  
0.510(0.020)  
0.050(0.002)  
0.150(0.006)  
5.800(0.228)  
6.200(0.244)  
1.350(0.053)  
1.550(0.061)  
0.400(0.016)  
1.270(0.050)  
0.150(0.006)  
0.250(0.010)  
Note: Eject hole, oriented hole and mold mark is optional.  
10 of 12  
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APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
Suggested Pad Layout  
(1) Package Type: SO-8EP  
Y1  
G
Z
X1  
Y
E
X
Z
G
X
Y
X1  
Y1  
E
Dimensions  
(mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch)  
(mm)/(inch)  
(mm)/(inch)  
(mm)/(inch)  
Value  
6.900/0.272 3.900/0.154 0.650/0.026 1.500/0.059  
3.600/0.142  
2.700/0.106  
1.270/0.050  
11 of 12  
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APR34509  
Document number: DS38510 Rev. 2 - 2  
APR34509  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
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Document number: DS38510 Rev. 2 - 2  

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