AP2201K-3.0TRE1 [DIODES]

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AP2201K-3.0TRE1
型号: AP2201K-3.0TRE1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
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Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
General Description  
Features  
The AP2201 is a 150mA output current fixed voltage  
regulator designed to provide very low noise, ultra low  
dropout voltage (typically 165mV at 150mA), very  
low standby current (1µA maximum) and excellent  
power supply ripple rejection (PSRR 75dB at 100Hz)  
in battery powered applications, such as handsets and  
PDAs and in noise sensitive applications, such as RF  
electronics.  
·
Up to 150mA Output Current  
Low Standby Current  
·
·
Low Dropout Voltage: V  
=165mV at 150mA  
DROP  
·
·
High Precision Output Voltage: ±1%  
Good Ripple Rejection Ability: 75dB at 100Hz  
and I  
=100µA  
OUT  
·
·
·
·
·
·
Tight Load and Line Regulation  
Low Temperature Coefficient  
Over Current Protection  
Thermal Protection  
Reverse-battery Protection  
Logic-controlled Enable  
The AP2201 also features individual logic compatible  
enable/shutdown control inputs, a low power shutdown  
mode for extended battery life, over current protection,  
over temperature protection, as well as reversed-bat-  
tery protection.  
Applications  
The AP2201 has 2.6V, 2.8V and 3.0V versions.  
The AP2201 is available in space saving 5-pin SOT-  
23-5 package.  
·
·
·
·
·
·
·
Cellular Phones  
Cordless Phones  
Digital Still Cameras  
Wireless Communicators  
PDAs / Palmtops  
PC Mother Board  
Consumer Electronics  
SOT-23-5  
Figure 1. Package Type of AP2201  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Pin Configuration  
K Package  
(SOT-23-5)  
VIN  
EN  
5
4
1
2
GND  
BYP  
VOUT  
3
Figure 2. Pin Configuration of AP2201 (Top View)  
Pin Description  
Pin Number  
Pin Name  
EN  
Function  
Logic high enable input  
1
2
3
4
GND  
Ground  
BYP  
Bypass capacitor for low noise operation  
Regulated output voltage  
VOUT  
5
VIN  
Input voltage  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Functional Block Diagram  
5
4
VOUT  
VIN  
3
BYP  
+
-
Bandgap  
Ref.  
1
EN  
Current Limit  
Thermal Shutdown  
2
GND  
Figure 3. Functional Block Diagram of AP2201  
Ordering Information  
AP2201  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
TR: Tape and Reel  
Package  
2.6: Fixed Output 2.6V  
2.8: Fixed Output 2.8V  
3.0: Fixed Output 3.0V  
K: SOT-23-5  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Ordering Information (Continued)  
Part Number  
Tin Lead Lead Free  
Marking ID  
Temperature  
Range  
Package  
Packing Type  
Tin Lead  
Lead Free  
E1E  
AP2201K-2.6TR AP2201K-2.6TRE1  
AP2201K-2.8TR AP2201K-2.8TRE1  
AP2201K-3.0TR AP2201K-3.0TRE1  
K1E  
K1G  
K1I  
Tape & Reel  
Tape & Reel  
Tape & Reel  
-40 to 125oC  
SOT-23-5  
E1G  
E1I  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
VIN  
Value  
Unit  
V
Supply Input Voltage  
Enable Input Voltage  
15  
VEN  
PD  
15  
V
Power Dissipation  
Internally Limited (Thermal Protection)  
W
oC  
oC  
Lead Temperature (Soldering, 10sec)  
Junction Temperature  
Storage Temperature  
TLEAD  
TJ  
260  
150  
oC  
V
TSTG  
-65 to 150  
200  
ESD (Machine Model)  
Thermal Resistance (No Heatsink)  
oC/W  
θJA  
SOT-23-5  
200  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
VIN  
Min  
2.5  
0
Max  
13.2  
13.2  
125  
Unit  
V
Supply Input Voltage  
Enable Input Voltage  
Operating Junction Temperature  
VEN  
TJ  
V
oC  
-40  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics  
AP2201-2.6 Electrical Characteristics  
VIN=3.6V, IOUT =100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
VOUT/VOUT  
VO UT/T  
Output Voltage Accuracy  
%
-2  
2
µV/oC  
120  
Output Voltage  
Temperature Coefficient  
(Note 3)  
ppm/oC  
(VOUT/VOUT)/T  
VRLINE  
46  
1
3
13  
VIN=3.6V to 13.2V  
IOUT=0.1mA to 150mA  
IOUT=100µA  
Line Regulation  
mV  
Load Regulation  
(Note 4)  
1
8
VRLOAD  
VDROP  
ISTD  
mV  
mV  
µA  
16  
15  
50  
70  
110  
140  
165  
0.01  
180  
182  
350  
600  
1300  
150  
230  
250  
300  
275  
350  
1
I
I
I
OUT=50mA  
OUT=100mA  
OUT=150mA  
Dropout Voltage  
(Note 5)  
VEN 0.4V (shutdown)  
VEN 0.18V (shutdown)  
Standby Current  
5
245  
265  
250  
270  
600  
800  
1000  
1500  
1900  
2500  
VEN 2.0V, IOUT=0µA  
VEN 2.0V, IOUT=100µA  
VEN 2.0V, IOUT=50mA  
VEN 2.0V, IOUT=100mA  
VEN 2.0V, IOUT=150mA  
Ground Pin Current  
(Note 6)  
IGND  
µA  
Ripple Rejection  
Current Limit  
PSRR  
ILIMIT  
frequency=100Hz, IOUT=100µA  
75  
dB  
VOUT = 0V  
320  
550  
mA  
IOUT=50mA, COUT=2.2µF,  
100pF from BYP to GND  
eno  
260  
Output Noise  
nV / Hz  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics (Continued)  
AP2201-2.6 Electrical Characteristics  
VIN=3.6V, IOUT=100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
2.0  
Typ  
Max  
0.4  
Unit  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
Regulator enabled  
V
0.18  
Enable Input Logic-high  
Voltage  
VIH  
V
VIL0.4V  
VIL0.18V  
VIL2.0V  
VIL2.0V  
0.01  
5
1
2
Enable Input Logic-low  
Current  
IIL  
µA  
µA  
20  
25  
Enable Input Logic-high  
Current  
IIH  
TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator standby current plus pass transistor base current. The total current drawn from the  
supply is the sum of the load current plus the ground pin current.  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics (Continued)  
AP2201-2.8 Electrical Characteristics  
VIN=3.8V, IOUT=100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
VOUT/VOUT  
VO UT/T  
Output Voltage Accuracy  
%
-2  
2
µV/oC  
120  
Output Voltage  
Temperature Coefficient  
(Note 3)  
ppm/oC  
(VOUT/VOUT)/T  
42.8  
1
4
14  
VRLINE  
VIN=3.8V to 13.2V  
IOUT=0.1mA to 150mA  
IOUT=100µA  
Line Regulation  
mV  
Load Regulation  
(Note 4)  
1
9
VRLOAD  
VDROP  
ISTD  
mV  
mV  
µA  
18  
15  
50  
70  
110  
140  
165  
0.01  
180  
182  
350  
600  
1300  
150  
230  
250  
300  
275  
350  
1
I
I
I
OUT=50mA  
OUT=100mA  
OUT=150mA  
Dropout Voltage  
(Note 5)  
VEN 0.4V (shutdown)  
VEN 0.18V (shutdown)  
Standby Current  
5
245  
265  
250  
270  
600  
800  
1000  
1500  
1900  
2500  
VEN 2.0V, IOUT=0µA  
VEN 2.0V, IOUT=100µA  
VEN 2.0V, IOUT=50mA  
VEN 2.0V, IOUT=100mA  
VEN 2.0V, IOUT=150mA  
Ground Pin Current  
(Note 6)  
IGND  
µA  
Ripple Rejection  
Current Limit  
PSRR  
ILIMIT  
frequency=100Hz, IOUT=100µA  
75  
dB  
VOUT = 0V  
320  
550  
mA  
IOUT=50mA, COUT=2.2µF,  
100pF from BYP to GND  
eno  
260  
Output Noise  
nV / Hz  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics (Continued)  
AP2201-2.8 Electrical Characteristics  
VIN=3.8V, IOUT=100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
2.0  
Typ  
Max  
0.4  
Unit  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
Regulator enabled  
V
0.18  
Enable Input Logic-high  
Voltage  
VIH  
V
VIL0.4V  
VIL0.18V  
VIL2.0V  
VIL2.0V  
0.01  
5
1
2
Enable Input Logic-low  
Current  
IIL  
µA  
µA  
20  
25  
Enable Input Logic-high  
Current  
IIH  
TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator standby current plus pass transistor base current. The total current drawn from the  
supply is the sum of the load current plus the ground pin current.  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics (Continued)  
AP2201-3.0 Electrical Characteristics  
VIN=4V, IOUT=100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
-1  
Typ  
Max  
Unit  
Variation from specified  
VOUT  
1
VOUT/VOUT  
VO UT/T  
Output Voltage Accuracy  
%
-2  
2
µV/oC  
120  
Output Voltage  
Temperature Coefficient  
(Note 3)  
ppm/oC  
(VOUT/VOUT)/T  
40  
1
4
VRLINE  
VIN=4V to 13.2V  
IOUT=0.1mA to 150mA  
IOUT=100µA  
Line Regulation  
mV  
14  
Load Regulation  
(Note 4)  
1
9
VRLOAD  
VDROP  
ISTD  
mV  
mV  
µA  
18  
15  
50  
70  
110  
140  
165  
0.01  
180  
182  
350  
600  
1300  
150  
230  
250  
300  
275  
350  
1
I
I
I
OUT=50mA  
OUT=100mA  
OUT=150mA  
Dropout Voltage  
(Note 5)  
VEN 0.4V (shutdown)  
VEN 0.18V (shutdown)  
Standby Current  
5
245  
265  
250  
270  
600  
800  
VEN 2.0V, IOUT=0µA  
VEN 2.0V, IOUT=100µA  
VEN 2.0V, IOUT=50mA  
VEN 2.0V, IOUT=100mA  
VEN 2.0V, IOUT=150mA  
Ground Pin Current  
(Note 6)  
IGND  
µA  
1000  
1500  
1900  
2500  
Ripple Rejection  
Current Limit  
PSRR  
ILIMIT  
frequency=100Hz, IOUT=100µA  
75  
dB  
VOUT = 0V  
320  
550  
mA  
IOUT=50mA, COUT=2.2µF,  
100pF from BYP to GND  
eno  
260  
Output Noise  
nV / Hz  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Electrical Characteristics (Continued)  
AP2201-3.0 Electrical Characteristics  
VIN=4V, IOUT=100  
µ
A, CIN=1  
µ
F, COUT=2.2  
µ
F, VEN  
2.0V, TJ=25oC, Bold typeface applies over -40oC  
TJ≤  
125oC (Note 2),  
unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
2.0  
Typ  
Max  
0.4  
Unit  
Enable Input Logic-low  
Voltage  
VIL  
Regulator shutdown  
Regulator enabled  
V
0.18  
Enable Input Logic-high  
Voltage  
VIH  
V
VIL0.4V  
VIL0.18V  
VIL2.0V  
VIL2.0V  
0.01  
5
1
2
Enable Input Logic-low  
Current  
IIL  
µA  
µA  
20  
25  
Enable Input Logic-high  
Current  
IIH  
TJ≤  
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not  
tested in production.  
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature  
range.  
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load  
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal  
regulation specification.  
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-  
TJ≤  
40oC 125oC) below its nominal value measured at 1V differential.  
Note 6: Ground pin current is the regulator standby current plus pass transistor base current. The total current drawn from the  
supply is the sum of the load current plus the ground pin current.  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
10  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Typical Performance Characteristics  
350  
300  
250  
200  
150  
100  
50  
2.900  
CIN=1.0µF, COUT=2.2µF  
AP2201-2.8  
2.875  
VIN=3.8V, IOUT=10mA  
CIN=1.0µF, COUT=2.2µF  
2.850  
2.825  
2.800  
2.775  
2.750  
2.725  
2.700  
IOUT=50mA  
IOUT=100mA  
IOUT=150mA  
0
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 4. Output Voltage vs. Junction Temperature  
Figure 5. Dropout Voltage vs. Junction Temperature  
5000  
6
AP2201-2.8  
VIN=3.8V,VEN=2.0V  
TJ=25oC  
5
4000  
4
3
CIN=1.0µF, COUT=2.2µF  
CIN=1.0µF, COUT=2.2µF  
3000  
IOUT=50mA  
IOUT=100mA  
2
2000  
IOUT=150mA  
1
1000  
0
0
-1000  
-2000  
-1  
-2  
-3  
-4  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150  
Output Current (mA)  
Junction Temperature (oC)  
Figure 6. Ground Pin Current vs. Output Current  
Figure 7. Ground Pin Current vs. Junction Temperature  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
11  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Typical Performance Characteristics (Continued)  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
20  
18  
16  
14  
12  
10  
8
AP2201-2.8  
CIN=1.0µF,COUT=2.2µF  
AP2201-2.8  
VIN=3.8V, CIN=1.0µF,  
VIN=3.8V, IOUT=5mA  
COUT=2.2µF, IOUT=100µA  
VEN=1.8V  
VEN=2.0V  
VEN=3.0V  
VEN=4.0V  
VEN=logic high  
VEN=logic low  
6
4
2
0
-60  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Junction Temperature (oC)  
Junction Temperature (oC)  
Figure 8. Enable Current vs. Junction Temperature  
Figure 9. Enable Voltage vs. Junction Temperature  
200  
10  
IOUT=10mA  
AP2201-2.8  
CIN=1.0µF, COUT=2.2µF, CBYP=100pF  
CIN=1.0µF, COUT=2.2µF  
VIN=4.5V, IOUT=10mA  
1
Noise Measurement Filter: DIN Noise  
150  
0.1  
100  
50  
0
0.01  
0.001  
10  
100  
1k  
10k  
100k  
1M  
10M  
10  
100  
1000  
10000  
Frequency (Hz)  
Bypass Capacitor (pF)  
Figure 10. Noise vs. Bypass Capacitor  
Figure 11. Output Noise vs. Frequency  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
12  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Typical Performance Characteristics (Continued)  
5.8  
4.8  
3.8  
2.8  
20  
150  
100  
50  
AP2201-2.8  
AP2201-2.8  
0
0
50  
0
-20  
-40  
-60  
-50  
-100  
0
20  
40 60 80 100 120 140 160 180 200  
0
10 20 30 40 50  
Time (  
60 70  
80 90 100  
µs)  
Time (µs)  
Figure 13. Line Transient  
(Conditions: VIN=3.8V to 4.8V, VEN=2V, IOUT=100µA  
CBYP=100pF, COUT=10µF)  
Figure 12. Load Transient  
(Conditions: V =3.8V, C =100pF, V =2V  
IN  
BYP  
EN  
I
=5mA to 50mA, C =1.0  
µF, C  
=2.2µF)  
OUT  
IN  
OUT  
4
2
100  
AP2201-2.8  
AP2201-2.8  
90  
VIN=3.8V,VRIPPLE=1VPP  
80  
IOUT=10mA, COUT=2.2µF  
0
70  
60  
50  
40  
30  
20  
10  
0
-2  
1
0
-1  
-2  
10  
100  
1k  
10k  
100k  
1M  
0
100 200 300 400 500 600 700 800 900 1000  
Frequency (Hz)  
Time (µs)  
Figure 14. V vs. V  
Figure 15. PSRR vs. Frequency  
EN  
OUT  
(Conditions: V =0V to 2V, V =3.8V, I =30mA,  
EN  
IN  
OUT  
C
=open, C =1.0  
µF, C  
=2.2µF)  
BYP  
IN  
OUT  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
13  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Typical Performance Characteristics (Continued)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
100  
10  
SOT-23-5 Package  
No Heatsink  
COUT=1.0µF  
No Bypass Capacitor  
1
Stable Area  
0.1  
0.01  
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature (oC)  
Output Current (mA)  
Figure 16. Power Dissipation vs. Ambient Temperature  
Figure 17. ESR vs. Output Current  
100  
100  
10  
COUT=2.2µF  
COUT=4.7µF  
10  
No Bypass Capacitor  
No Bypass Capacitor  
Stable Area  
Stable Area  
1
1
0.1  
0.01  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
0
25  
50  
75  
100  
125  
150  
Output Current (mA)  
Output Current (mA)  
Figure 18. ESR vs. Output Current  
Figure 19. ESR vs. Output Current  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
14  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Typical Application  
AP2201-2.8  
VIN=3.8V  
VOUT=2.8V  
VOUT  
VIN  
VOUT  
VIN  
EN  
COUT  
2.2µF  
CIN  
1.0µF  
BYP  
CBYP  
100pF  
GND  
Figure 20. Typical Application of AP2201 (Note 7)  
Note 7: Dropout voltage is 165mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.165V is the minimum  
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage  
is VOUT+0.5V to 13.2V. For AP2201-2.8 version, its input voltage can be set from 3.3V(VOUT+0.5V) to 13.2V.  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
15  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Application Information  
Input Capacitor  
T = P *θJA + T  
J D A  
A 1µF minimum capacitor is recommended to be  
P =(V -V  
)*I  
+V *I  
D
IN OUT OUT IN GND  
placed between V and GND.  
IN  
Where: T T  
, T  
is absolute maximum rat-  
J
J(max) J(max)  
Output Capacitor  
It is required to prevent oscillation. 1.0µF minimum  
is recommended when C  
ings for the junction temperature; V *I  
can be  
IN GND  
ignored due to its small value.  
is unused. 2.2µF mini-  
BYP  
mum is recommended when C  
is 100pF. The out-  
BYP  
T
is 150oC, θJA is 200oC/W for SOT-23-5 pack-  
J(max)  
put capacitor may be increased to improve transient  
response.  
age, no heatsink is required since the package alone  
will dissipate enough heat to satisfy these require-  
ments unless the calculated value for power dissipa-  
tion exceeds the limit.  
Noise Bypass Capacitor  
Bypass capacitor is connected to the internal voltage  
reference. A 100pF capacitor connected from BYP to  
GND make this reference quiet, resulting in a  
significant reduction in output noise, but the ESR sta-  
ble area will be narrowed.  
Example: For 2.8V version packaged in SOT-23-5,  
o
I
=150mA, T =50 C, V  
is:  
IN(Max)  
OUT  
A
(150oC-50oC)/(0.15A*200oC/W)+2.8V=6.133V  
Therefore, for good performance, please make sure  
that input voltage is less than 6.133V without heat-  
The start-up speed of the AP2201 is inversely  
proportional to the value of reference bypass  
capacitor. In some cases, if output noise is not a  
major concern and rapid turn-on is necessary, omit  
o
sink when T =50 C.  
A
C
and leave BYP open.  
BYP  
Power Dissipation  
Thermal shutdown may take place if exceeding the  
maximum power dissipation in application. Under all  
possible operating conditions, the junction tempera-  
ture must be within the range specified under abso-  
lute maximum ratings to avoid thermal shutdown.  
To determine if the power dissipated in the regulator  
reaches the maximum power dissipation (see figure  
16), using:  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
16  
Data Sheet  
150mA RF ULDO REGULATOR  
AP2201  
Mechanical Dimensions  
SOT-23-5  
Unit: mm(inch)  
2.820(0.111)  
3.020(0.119)  
0.100(0.004)  
0.200(0.008)  
0.200(0.008)  
0.700(0.028)  
REF  
0.300(0.012)  
0.400(0.016)  
0°  
8°  
0.950(0.037)  
TYP  
1.800(0.071)  
2.000(0.079)  
0.000(0.000)  
0.100(0.004)  
1.050(0.041)  
1.150(0.045)  
Nov. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
17  
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, 3170 De La Cruz Blvd., Suite 105,  
USA Office  
BCD Semiconductor Corporation  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office  
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan  
Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
Santa Clara,  
CA 95054-2411, U.S.A  

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