AP2201K2.8TRE1 [BCDSEMI]
150mA RF ULDO REGULATOR; 150毫安RF ULDO稳压器
| 型号： | AP2201K2.8TRE1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | 150mA RF ULDO REGULATOR |
| 文件： | 总12页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
General Description
Features
The AP2201 is a 150mA output current fixed voltage
regulator designed to provide very low noise (45µVrms
at 80Hz-100KHz), ultra low dropout voltage (typically
165mV at 150mA), very low quiescent current (1µA
maximum) and excellent power supply ripple rejection
(PSRR 75dB at 100Hz) in battery powered applica-
tions, such as handsets and PDAs and in noise sensitive
applications, such as RF electronics.
·
Up to 150mA Regulator Output
Low Quiescent Current
Low Dropout Voltage: VD=165mV at 150mA
·
·
·
·
·
High Precision Output Voltage: ±1%
Output Noise: 45µVrms at 80Hz-100KHz
Good Ripple Rejection Ability: 75dB at 100Hz
and IOUT=100µA
·
·
·
·
·
Tight Load and Line Regulation
Low Temperature Coefficient
Over Current Protection
Thermal Protection
Reverse-battery Protection
Zero Off-mode Current
Logic-controlled Enable
The AP2201 also features individual logic compatible
enable/shutdown control inputs, a low power shutdown
mode for extended battery life, over current protection,
over temperature protection, as well as reversed-bat-
tery protection.
·
·
The output capacitor of 1.0µF minimum and 2.2µF
minimum near its pin are recommended when CBYP is
Applications
not used and when CBYP is 470pF respectively. The
output capacitor should have 5Ω or less ESR, tantalum
or aluminium electrolytic capacitors are adequate.
Bypass capacitor is connected to the internal voltage
reference to quiet noise. Its recommended value is
from 470pF to 1nF. If output noise is not a major con-
cern and rapid turn-on is necessary, omit CBYP and
·
·
·
·
·
Cellular Phones
Cordless Phones
Digital Still Cameras
Wireless Communicators
PDAs / Palmtops
leave BYP open.
·
·
PC Mother Board
Consumer Electronics
The AP2201 has 2.6V, 2.8V and 3.0V versions now.
The AP2201 is available in space saving 5-pin SOT-
23-5 package.
AP2201-2.8
VIN=3.8V
VOUT=2.8V
+
VOUT
VIN
VOUT
VIN
EN
COUT
CIN
1.0µF
BYP
GND
2.2µF
tantalum
CBYP
470pF
SOT-23-5
Figure 1. Typical Application of AP2201
Figure 2. Package Type of AP2201
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Pin Configuration
K Package
(SOT-23-5)
VIN
EN
5
4
1
2
3
GND
BYP
VOUT
Figure 3. Pin Configuration of AP2201 (Top View)
Pin Description
Pin Number
Pin Name
EN
Function
Logic high enable input.
1
2
3
4
GND
Ground.
BYP
Bypass capacitor for low noise operation.
Regulated output voltage.
VOUT
5
VIN
Input voltage.
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Functional Block Diagram
5
4
VOUT
VIN
3
1
BYP
+
Bandgap
Ref.
-
EN
Current Limit
Thermal Shutdown
2
GND
Figure 4. Functional Block Diagram of AP2201
Ordering Information
AP2201
-
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Package
2.6: Fixed Output 2.6V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
K: SOT-23-5
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Ordering Information (Continued)
Part Number
Tin Lead Lead Free
Marking ID
Temperature
Range
Package
Packing Type
Tin Lead
K1E
Lead Free
E1E
AP2201K-2.6TR AP2201K-2.6TRE1
AP2201K-2.8TR AP2201K-2.8TRE1
AP2201K-3.0TR AP2201K-3.0TRE1
Tape & Reel
Tape & Reel
Tape & Reel
-40 to 125oC
SOT-23-5
K1G
E1G
K1I
E1I
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VIN
Value
Unit
V
Supply Input Voltage
Enable Input Voltage
Power Dissipation
15
15
VEN
V
PD
Internally Limited
W
oC
Lead Temperature (Soldering, 5sec)
Storage Temperature
ESD (Machine Model)
Thermal Resistance
TLEAD
TSTG
260
-65 to 150
200
oC
V
θJA
(Note 2)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max)
-
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will
go into thermal shutdown.
Recommended Operating Conditions
Parameter
Symbol
VIN
Min
2.5
0
Max
13.2
13.2
125
Unit
V
Supply Input Voltage
Enable Input Voltage
Operating Junction Temperature
VEN
TJ
V
oC
-40
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Electrical Characteristics
o
o
o
V =V
+1V, I
= 100
µ
A, C = 2.2
µF, V
≥ 2.0V, T = 25 C, Bold typeface applies over -40 C<T <125 C, unless other-
IN
OUT
OUT
L
EN J J
wise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VO/VO
Output Voltage Accuracy
%
-2
2
µV/oC
Output Voltage
Temperature Coefficient
∆VO /∆T
(Note 3)
120
AP2201-2.6V
VIN= VOUT +1V to 13.2V
1
3
13
4
AP2201-2.8V
VIN= VOUT +1V to 13.2V
1
1
VRLINE
Line Regulation
mV
14
4
AP2201-3.0V
VIN= VOUT +1V to 13.2V
14
8
AP2201-2.6V
1
I
OUT= 0.1mA to 150mA
16
9
AP2201-2.8V
1
VRLOAD
Load Regulation (Note 4)
mV
IOUT= 0.1mA to 150mA
18
9
AP2201-3.0V
1
I
OUT= 0.1mA to 150mA
18
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
180
182
350
600
150
230
250
300
275
350
1
VIN-VO
Dropout Voltage (Note 5)
mV
µA
µA
VEN ≤ 0.4V (shutdown)
VEN ≤ 0.18V (shutdown)
IQ
Quiescent Current
5
245
265
250
270
600
800
1000
1500
VEN ≥ 2.0V, IOUT=0µA
VEN ≥ 2.0V, IOUT=100µA
VEN ≥ 2.0V, IOUT=50mA
VEN ≥ 2.0V, IOUT=100mA
IGND
Ground Pin Current (Note 6)
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Electrical Characteristics (Continued)
o
o
o
V =V
+1V, I
= 100
µ
A, C = 2.2
µF, V
≥ 2.0V, T = 25 C, Bold typeface applies over -40 C<T <125 C, unless other-
IN
OUT
OUT
L
EN J J
wise specified.
Parameter
Symbol
Conditions
Min
Typ
Max
1900
2500
Unit
1300
IGND
VEN ≥ 2.0V, IOUT=150mA
µA
Ground Pin Current (Note 6)
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT = 0V
320
550
mA
Output Noise
(Regulator B only)
IOUT=50mA, CL=2.2µF,
470 pF from BYP to GND
eno
260
nV / Hz
0.4
Enable Input Logic-Low
Voltage
VIL
VIH
Regulator shutdown
Regulator enabled
V
V
0.18
Enable Input Logic-High
Voltage
2.0
VIL≤ 0.4V
VIL≤ 0.18V
VIL≥ 2.0V
VIL≥ 2.0V
0.01
5
-1
-2
Enable Input Logic-Low
Current
IIL
µA
µA
20
25
Enable Input Logic-High
Current
IIH
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Typical Performance Characteristics
350
300
250
200
150
100
50
2.900
IOUT=50mA
IOUT=100mA
IOUT=150mA
2.875
AZ2201-2.8V
2.850
2.825
2.800
2.775
2.750
2.725
2.700
CIN=1.0µF, CL=2.2µF, CBYP=1nF
0
-60
-60
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
Junction Temperature (oC)
Junction Temperature (oC)
Figure 5. Output Voltage vs. Junction Temperature
Figure 6. Dropout Voltage vs. Junction Temperature
5000
6
5
AP2201-2.8V
IOUT=50mA
4000
IOUT=100mA
4
IOUT=150mA
3000
3
VIN=3.8V,VEN=2.0V,CIN=1.0µF,
2
CL=2.2µF,CBYP=1nF
2000
1000
0
1
0
-1
-2
-3
-4
-1000
-2000
-60
-40
-20
0
20
40
60
80
100
120
140
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Output Current (mA)
Junction Temperature (oC)
Figure 7. Ground Pin Current vs. Output Current
Figure 8. Ground Pin Current vs. Junction Temperature
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Typical Performance Characteristics (Continued)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
18
16
14
12
10
8
AP2201-2.8V
VEN=on
VEN=1.8V
VEN=2.0V
AP2201-2.8V
VEN=off
VEN=3.0V
CIN=1.0µF,CL=2.2µF,CBYP=1nF
VIN=3.8V,IOUT=5mA
VEN=4.0V
VIN=3.8V, CIN=1.0µF, CL=2.2µF,
IOUT=100µA, CBYP=1nF
6
4
2
0
-60
-60
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
Junction Temperature (oC)
Junction Temperature (oC)
Figure 9. Enable Current vs. Junction Temperature
Figure 10. Enable Voltage vs. Junction Temperature
200
150
100
50
AP2201-2.8V
0
10
100
1000
10000
Time (µs)
Bypass Capacitor (pF)
Figure 11. Noise vs. Bypass Capacitor
Figure 12. Load Transient
(Conditions: VIN=3.8V, CBYP=680pF, VEN=2V,
IOUT=5mA to 50mA, CL=2.2µF
)
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
8
Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Typical Performance Characteristics (Continued)
AP2201-2.8V
AP2201-2.8V
Time (µs)
Time (µs)
Figure 14. VEN(on) vs. VO
Figure 13. Line Transient
(Conditions: VEN=0V to 2V, VIN=3.8V, IOUT=30mA,
(Conditions: VIN=3.8V to 4.8V, VEN=2V, IOUT=100µA
CBYP=open, CL=2.2µF
)
CBYP=680pF, CL=10µF)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
AP2201-2.8V
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 15. PSRR vs. Frequency
( Conditions: CIN =1.0µF, CL = 2.2µF, CBYP= open,
VIN=3.8V, IOUT=10mA, VEN=2V)
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
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Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Application Information
External Capacitors
The output capacitor should have an ESR of about
5Ω or less. In most cases, tantalum or aluminium
electrolytic capacitors are adequate.
The AP2201 requires external capacitors for regula-
tor stability. These capacitors must be correctly
selected for good performance.
Noise Bypass Capacitor
Input Capacitor
Bypass capacitor is connected to the internal voltage
reference. A 680pF capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise. When using
If there is more than 10 inches of wire between the
input and the AC filter or if a battery is used as the
input, at least a 1µF capacitor should be placed from
IN to GND.
C
BYP, output capacitors of 2.2µF or greater are
required for better stability.
Output Capacitor
It is required to prevent oscillation. 1.0µF minimum
is recommended when CBYP is not used. 2.2µF mini-
mum is recommended when CBYP is 470pF. The out-
The start-up speed of the AP2201 is inversely
proportional to the value of reference bypass
capacitor. In some cases if output noise is not a major
concern and rapid turn-on is necessary, omit CBYP
put capacitor may be increased without limit for large
values to improve transient response.
and leave BYP open.
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
10
Preliminary Datasheet
150mA RF ULDO REGULATOR
AP2201
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
0.950(0.037)
TYP
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
BCD Semiconductor Manufacturing Limited
Jun. 2005 Rev. 1. 0
11
http://www.bcdsemi.com
BCD Semiconductor Corporation
3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A
Tel: +1-408-988 6388, Fax: +1-408-988 6386
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, PRC
Advanced Analog Circuits (Shanghai) Corporation
8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1 Rui Guang Road, Nei-Hu District, Taipei, Taiwan
Tel: +886-2-2656-2808, Fax: +886-2-2656-2806
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any pro-
ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for
use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any
liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limi-
ted does not convey any license under its patent rights or other rights nor the rights of others.
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