AH342-PL-B [DIODES]

ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT; ACTIVE HIGH / LOW互补输出
AH342-PL-B
型号: AH342-PL-B
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT
ACTIVE HIGH / LOW互补输出

输出元件
文件: 总8页 (文件大小:167K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
General Description  
Features  
The AH342 is  
a bipolar latching hall IC with a pair of  
Digital dual complementary sink/source outputs  
Reverse Voltage Polarity protection for full supply  
range.  
High output current capability  
Low profile packages: SIP-4L  
Lead Free Package: SIP-4L  
complementary push/pull outputs. A dual hall element is used to  
offset stress induced noise and drift. The robust outputs are  
capable of sourcing up to 7.4mA and sinking up to 4.4mA. The  
device contains inherent reverse polarity protection up to the full  
power supply range.  
Lead Free Finish/RoHS Compliant (Note 1)  
Applications  
Conveyors  
Motor control  
Power sensing  
Linear or rotary motion detection  
RPM sensing  
Ordering Information  
AH 342 - P L - B  
Package  
Lead Free  
Packing  
B : Bulk  
P : SIP-4L  
L : Lead Free  
Bulk  
Package  
Code  
Packaging  
(Note 2)  
Device  
Quantity  
Part Number Suffix  
AH342-PL-B  
P
SIP-4L  
1000  
-B  
Lead-free  
Notes:  
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at  
http://www.diodes.com/products/lead_free.html.  
2. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
AH342 Rev. 3  
1 of 8  
JANUARY 2009  
www.diodes.com  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Pin Assignments  
( Top View )  
1 : Vcc  
342  
2 : DO  
3 : DOB  
4 : Vss  
1
2
3
4
SIP-4L  
Pin Descriptions  
Pin Name  
Description  
Positive Power Supply  
VCC  
DO  
Output pin  
Output pin  
Ground  
DOB  
VSS  
NC  
No Connect  
AH342 Rev. 3  
2 of 8  
www.diodes.com  
JANUARY 2009  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Block Diagram  
OUTPUT AMP  
SOURCE  
7.5V  
660  
510  
IO  
SINK  
Voltage  
Regulator  
Output  
Amp  
#1  
IO1  
IO2  
Amp  
and  
Trigger  
Hall  
Sensor  
Interface  
Circuit  
Output  
Amp  
#2  
Absolute Maximum Ratings (Note 3)  
Symbol  
Characteristics  
Supply voltage  
Conditions  
-40oC to 125oC  
Voltage Externally Applied to Output -40oC to 125oC  
Output Current  
Rating  
Unit  
VCC  
VOUT  
Ic  
±28  
-1.2 to 5  
±10  
V
V
mA  
No limit; the circuit cannot be  
damaged by magnetic overdrive  
No power applied  
B
Magnetic Flux density  
Unlimited  
TST  
Storage Temperature  
-40 to 150  
°C  
Notes:  
3. Absolute maximum ratings are the extreme limits that the device will withstand without damage to the device. However, the electrical and  
magnetic characteristics are not guaranteed as the maximum limits (above recommended operating conditions) are approached nor will the  
device necessarily operate at absolute maximum rating.  
AH342 Rev. 3  
3 of 8  
JANUARY 2009  
www.diodes.com  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Recommended Operating Conditions  
Symbol  
Characteristic  
Supply Voltage  
Conditions  
Min  
Max  
Unit  
VCC  
Operating  
Operating  
4.5  
28  
V
Operating Ambient  
Temperature (Note 4)  
TA  
-40  
125  
°C  
Notes:  
4. Shall not exceed PD and Safety Operation Area.  
Electrical Characteristics (Note 5, 6)  
24oC ± 2oC  
Min Typ. Max Min Typ. Max  
-40oC to 125 oC  
Symbol  
Characteristic  
Conditions  
28V±0.5% supply  
Units  
ICC  
Supply Current  
4
4.5  
6
3
4.5  
7
mA  
Output Voltage  
#1 Sourcing  
6.0  
7.0 7.5  
-
-
-
Switch magnetically operated:  
No load 28V±0.5% supply.  
Switch magnetically released:  
No load 28V±0.5% supply.  
VOUT  
#2 Sinking  
#1 Sinking  
#2 Sourcing  
0
0
0.1 0.2  
0.1 0.2  
7.0 7.5  
-
-
-
-
-
-
-
-
-
V
6.0  
Apply voltage 0.2V greater than  
measured output source voltage  
measure current, no load  
28V±0.5% supply.  
ILeak(sink)  
Leakage (sink)  
-
-
1.0  
-
-
1.0 µA  
Output Current  
#1 Sourcing  
5.5  
2.8  
2.8  
5.5  
7.4 8.0 5.0 7.4 8.5  
3.4 4.7 2.4 3.4 5.0  
3.4 4.7 2.4 3.4 5.0  
7.4 8.0 5.0 7.4 8.5  
Apply 2V to output and measure  
current. Switch magnetically  
operated, no load 28V±0.5%.  
Apply 2V to output and measure  
current. Switch magnetically  
released, no load 28V±0.5%.  
#2 Sinking  
#1 Sinking  
#2 Sourcing  
IOUT  
mA  
µs  
Output Switching Time  
90% to 10%; no load 28V±0.5%  
Supply  
10% to 90%; no load 28V±0.5%  
Supply  
tf  
tr  
Fall Time  
Rise Time  
-
-
-
-
-
-
-
-
-
-
1.0  
1.0  
AH342 Rev. 3  
4 of 8  
JANUARY 2009  
www.diodes.com  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Magnetic Characteristics (TA = +25°C) (Note 5, 6)  
( 1mT = 10 Gauss )  
-40 oC to 125 oC  
Vs=4.5Vdc to 28Vdc  
24oC ± 2oC  
Vs=12Vdc ± 0.5%Vdc  
Symbol  
Characteristic  
Unit  
Min  
40  
-120  
120  
Max  
120  
-40  
Min  
30  
-150  
120  
Max  
150  
-30  
Bop  
Brp  
Bhy  
Operate Point  
Release Point  
Hysteresis  
Gauss  
Gauss  
Gauss  
200  
200  
Notes:  
5. All the parameters are tested under the 25oC only. The operation temperature (-40oC to 125oC) is guaranteed by design, it is typical value.  
6. The magnetic field strength (gauss) required to cause the switch to change state (operate and release) will be as specified in the magnetic  
characteristics. To test the switch against the specified magnetic characteristics the switch must be placed in a uniform magnetic field.  
DO  
DOB  
( off-state )  
( off-state )  
Vcc  
Vcc  
B
hy  
Bhy  
Turn on  
Turn oFF  
Turn off  
Turn on  
( on-state )  
( on-state )  
Vsat  
Vsat  
Brp  
B
op  
B
rp  
Bop  
0
0
S
S
N
N
( Magnetic flux density B )  
( Magnetic flux density B )  
Performance Characteristics  
25  
50  
60  
70  
80  
85  
286  
130  
88  
90  
264  
135  
66  
95  
100  
220  
150  
0
TA (°C)  
PD (mW)  
TA (°C)  
550  
105  
198  
440  
110  
176  
396  
115  
154  
352  
120  
132  
308  
125  
110  
242  
140  
44  
PD (mW)  
Power Dissipation Curve  
PD (mW )  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
T
A (C)  
AH342 Rev. 3  
5 of 8  
www.diodes.com  
JANUARY 2009  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Operating Characteristics  
DO  
Vcc  
S
Vd  
High  
Marking side  
Bhy  
Low  
N
Vsat  
( SIP-4L)  
Brp  
Bop  
0
S
N
( Magnetic flux density )  
Marking Information  
( Top View )  
Y : Year : 0~9  
Part Number  
342  
Y WW X  
WW : Week : 01~52, "52" represents  
52 and 53 week  
X : Internal Code : a~z : Lead Free  
AH342 Rev. 3  
6 of 8  
www.diodes.com  
JANUARY 2009  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
Package Information (All Dimensions in mm)  
(1) Package type: SIP-4L  
Marking side  
1.950.1mm  
1.10.1mm  
1
2
3
4
0.7mm  
Sensor Location  
Active Area Depth  
Package Dimension  
AH342 Rev. 3  
7 of 8  
www.diodes.com  
JANUARY 2009  
© Diodes Incorporated  
AH342  
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT  
HALL-EFFECT LATCH  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreeto hold Diodes Incorporatedand all the companieswhose products are represented onour website, harmlessagainst all damages.  
LIFE SUPPORT  
Diodes Incorporated productsare not authorizedfor use as criticalcomponents in lifesupport devices or systemswithout theexpressed written approval of the  
President of DiodesIncorporated.  
AH342 Rev. 3  
8 of 8  
JANUARY 2009  
www.diodes.com  
© Diodes Incorporated  

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