2N4444 [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 5.1; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-127;
| 型号： | 2N4444 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 5.1; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-127 栅 栅极 |
| 文件： | 总5页 (文件大小：715K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
2N4441
2N4442
2N4443
2N4444
50
VRRM, VDRM
200
400
600
Volts
Non repetitive peak reverse blocking voltage
(t = 5ms (max.) duration)
2N4441
75
VRSM
Volts
2N4442
300
500
700
2N4443
2N4444
Forward current RMS (all conduction angles)
Average on state current, TC = 73°C
IT(RMS)
IT(AV)
8
Amps
Amps
5.1
Peak non-repetitive surge current
ITSM
Amps
(1/2 cycle, 60Hz preceded and followed by rated current and voltage)
80
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
Forward peak gate power
I2t
PGM
PG(AV)
IGM
VRGM
TJ
25
A2s
Watts
Watts
Amps
Volts
°C
5
Average gate power
0.5
Forward peak gate current
2
Peak reverse gate voltage
10
Operating junction temperature range
-40 to +100
-40 to +150
8
Storage temperature range
Tstg
-
°C
Mounting torque (6-32 screw)(2)
In. lb.
Note 1: Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with
a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. Soldering temperatures shall not exceed 225°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
Typical
Maximum
Unit
°C/W
°C/W
-
2.5
-
RӨJA
40
Rev. 20130117
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Gate trigger voltage (continuous dc)
(VD = 7 Vdc, RL = 100 Ω)
TC = 25°C
TC = -40°C
TC = 100°C
-
-
0.75
1.5
2.5
-
VGT
Volts
Ω)
(VD = 7 Vdc, RL = 100
-
-
Ω)
(VD = Rated VDRM, RL = 100
0.2
Peak on state voltage
≤ 2%)
(pulse width = 1 to 2ms, duty cycle
(ITM = 5A peak)
VTM
Volts
mA
-
-
1
-
1.5
2
(ITM = 15.7A peak)
Holding current
(VD = 7Vdc, gate open)
TC = 25°C
IH
-
-
6
-
40
70
TC = -40°C
Gate controlled turn-on time
tgt
µs
µs
(ITM = 5A, IGT = 20mA, VD = rated VDRM
)
-
1
-
Circuit commutated turn-off time
(ITM = 5A, IR = 5A)
tq
-
-
15
20
-
-
(ITM = 5A, IR = 5A, TJ = 100°C)
Critical rate of rise of off-state voltage
dv/dt
V/µs
(VD = rated VDRM, exponential waveform, TJ = 100°C,
gate open)
-
50
-
Rev. 20130117
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-127
Marking:
Pin out:
Body painted, alpha-numeric
See below
TO-127
Inches
Millimeters
Min
Max
Min
Max
16.380
12.830
3.430
1.240
3.760
A
B
C
D
F
0.635
0.495
0.125
0.043
0.138
0.645
0.505
0.135
0.049
0.148
16.130
12.570
3.180
1.090
3.510
G
H
J
0.166 BSC
4.220 BSC
0.105
0.032
0.595
0.115
0.034
0.645
2.670
0.813
2.920
0.864
K
M
Q
R
U
V
15.110
16.380
9° TYP
9° TYP
0.185
0.075
0.245
0.080
0.195
0.085
0.255
-
4.700
1.910
6.220
2.030
4.950
2.160
6.480
-
Rev. 20130117
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130117
2N4441-2N4444
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130117
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