ADB5006P [DEC]
50 AMP SILICON BRIDGE RECTIFIERS; 50 AMP硅桥式整流器
| 型号： | ADB5006P |
| 厂家： | 
DIOTEC ELECTRONICS CORPORATION |
| 描述： | 50 AMP SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-5000P-1B
ADBD-5000P-1B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
50 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
SERIES: DB5000P - DB5010P and ADB5004P - ADB5008P
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
BH
BH
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
LT
LL
INTEGRALLY MOLDED HEAT SINK PROVIDES VERY
LOW THERMAL RESISTANCE FOR MAXIMUM HEAT
DISSIPATION
HOLE FOR
#8 SCREW
HOLE FOR
#8 SCREW
LD
D1
UL RECOGNIZED - FILE #E141956
+
+
D1
RoHS COMPLIANT
BL
BL
D1
D3
D2
_
_
+
_
MECHANICAL DATA
D2
BL
D1
BL
Case: Case: Molded epoxy with integral heat sink
Epoxy carries a U/L Flammability rating of 94V-0
MILLIMETERS
INCHES
MIN
1.12
10.2 0.38
18.5 0.69
MILLIMETERS
INCHES
SYM
SYM
Terminals: Round silver plated copper pins or fast-on terminals
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case
MIN
28.4
9.6
MAX
28.7
MIN
28.4
9.6
MAX
28.7
MIN
1.12
MAX
MAX
BL
BH
D1
D2
LL
1.13
0.40
0.73
0.47
n/a
BL
BH
D1
D2
D3
LT
1.13
0.40
0.66
0.73
0.57
0.6
10.2 0.38
16.7 0.62
18.5 0.69
17.5
10.9
20.6
1.0
15.7
11.9
n/a
0.43
0.81
0.039 0.042
17.5
13.5
n/a
Mounting Position: Any. Through hole for #8 screw.
14.5
15.2
0.53
n/a
Max. mounting torque = 20 in-lb.
LD
1.1
Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams)
Wire Leads - 0.55 Ounces (16.0 Grams)
Suffix "T" indicates FAST-ON TERMINALS
Suffix "W" indicates WIRE LEADS
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
UNITS
CONTROLLED
AVALANCHE
NON-CONTROLLED
AVALANCHE
DB
Series Number
Maximum DC Blocking Voltage
V
V
Working Peak Reverse Voltage
400 600 800 50 100 200 400 600 800 1000
VOLTS
Maximum Peak Recurrent Reverse Voltage
V
RMS Reverse Voltage
V
280 420 560 35
70 140 280 420 560 700
See Note 1
Mimimum Avalanche Voltage
Maximum Avalanche Voltage
V
n/a
See Note 1
V
n/a
VOLTS
1.10
Max.
Typ.
Forward Voltage Drop (Per Diode) at 25 Amps DC
V
1.02
Rating for Fusing (Non-repetitive; 1mS < t < 8.3mS
1000
A SEC
I t
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
I
600
Superimposed on Rated Load (JEDEC Method). T = 175 C
AMPS
Average Forward Rectified Current @ T = 55 C
I
50
Junction Operating and Storage Temperature Range
T , T
-55 to +175
°C
@ T = 25 C
@T = 125 C
1
Maximum Reverse Current at Rated V
I
mA
50
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance, Junction to Case
V
VOLTS
2500
R
1.10
C/W
E51
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-5000P-2A
ABDB-5000P-2A
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
50 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB5000P - DB5010P and SERIES ADB5004P - ADB5008P
60
60Hz Resistive or Inductive Loads
T = 175 C
50
40
30
Bridge Mounted on
9" x 4" x 5" Thick
20
(22.9cm x 10.2cm x 12.9cm)
Finned Al. Plate
10
0
25
75
125
175
Number of Cycles at 60 Hz
Case Temperature, C
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 1. FORWARD CURRENT DERATING CURVE
10
T = 125 C
1.0
10
0.1
T = 25 C
1.0
Pulse Width = 300 mS
T = 25 C
1% Duty Cycle
0.1
.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
E52
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