ADB808 [DEC]
8 AMP SILICON BRIDGE RECTIFIERS; 8 AMP硅桥式整流器
| 型号： | ADB808 |
| 厂家： | 
DIOTEC ELECTRONICS CORPORATION |
| 描述： | 8 AMP SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-800-1C
ABDB-800-1C
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
ACTUAL SIZE
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
DT
SERIES DB800-DB810 and ADB804-ADB808
DB804
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
BH
SURGE OVERLOAD RATING TO 400 AMPS PEAK
UL RECOGNIZED - FILE #E124962
LL
_
+
RoHS COMPLIANT
LD
D1
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated copper pins
+
MILLIMETERS
INCHES
MIN
0.73
0.25
SYM
MIN
MAX
19.6
7.6
MAX
D1
BL
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
18.5
6.4
0.77
0.3
BL
BH
D1
LL
_
12.2
22.2
1.2
13.2 0.48
n/a
1.3
0.52
n/a
0.875
BL
LD
0.048 0.052
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
UNITS
Series Number
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
V
V
VOLTS
V
RMS Reverse Voltage
V
Power Dissipation in V
Region for 100 S Square Wave
Region
P
WATTS
Continuous Power Dissipation in V
P
I t
I
@ T =80 C (Heat Sink Temp)
AMPS
Thermal Energy (Rating for Fusing)
SEC
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T = 150 C
AMPS
@ T = 50 C (Note 1)
@T = 50 C (Note 2)
I
Average Forward Rectified Current
Junction Operating and Storage Temperature Range
T , T
°C
Minimum Avalanche Voltage
V
V
V
Maximum Avalanche Voltage
VOLTS
Maximum Forward Voltage (Per Diode) at 4 Amps DC
@ T = 25 C
@T = 125 C
Maximum Reverse Current at Rated V
I
A
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
VOLTS
Junction to Ambient (Note 2)
Junction to Case (Note 1)
R
Typical Thermal Resistance
C/W
R
E31
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-800-2C
ABDB-800-2C
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
400
12
60Hz Resistive or Inductive Loads
350
10
NOTE 1
300
8
Case
250
6
200
Ambient
4
150
2
NOTE 2
100
0
0
50
100
150
50
1
10
100
Temperature, C
Number of Cycles at 60 Hz
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
T
= 100 C
1.0
NOTE 3
T
= 25 C
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTE 4
NOTES
(1) Case Temperature, T With Bridge Mounted on
4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm)
Aluminum Plate
Ambient Temperature, T With Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
E32
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