MTN3400N3 [CYSTEKEC]
30V N-CHANNEL Enhancement Mode MOSFET; 30V N沟道增强型MOSFET
| 型号： | MTN3400N3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 30V N-CHANNEL Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 1/ 7
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN3400N3
Features
• VDS=30V
Ω
RDS(ON)=33m @VGS=4.5V, ID=5A
Ω
RDS(ON)=52m @VGS=2.5V, ID=4A
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
Outline
MTN3400N3
SOT-23
D
G：Gate
S
G
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Limits
30
±12
5.8
4.9
30
Unit
V
V
VDS
VGS
ID
ID
IDM
A
A
A
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
1.38
W
PD
Linear Derating Factor
0.01
90
W/°C
°C/W
°C
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Rth,ja
Tj, Tstg
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 2/ 7
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VDS=5V, ID=5A
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
30
0.7
-
-
15
-
-
-
-
-
-
-
1.4
-
V
V
S
nA
μA
μA
-
-
-
-
-
-
-
±
100
1
±
VGS= 12V, VDS=0
VDS=24V, VGS=0
IDSS
5
VDS=24V, VGS=0, Tj=55°C
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
28
33
52
*RDS(ON)
Dynamic
mΩ
VGS=2.5V, ID=4A
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
-
-
-
-
-
-
-
-
-
-
-
823
99
77
1030
pF
ns
VDS=15V, VGS=0, f=1MHz
-
-
-
-
-
-
12
-
-
3.6
3.3
4.8
26.3
4.1
9.7
1.6
3.1
1.2
Ω
VDS=15V, VGS=10V, RG=3 , RL=2.7
Ω
nC
VDS=15V, ID=5.8A, VGS=4.5V
f=1MHz
*Qgs
*Qgd
Rg
Ω
Source-Drain Diode
*VSD
*IS
*trr
-
-
-
-
-
-
16
8.9
1.0
2.5
-
V
A
ns
nC
VGS=0V, IS=1.0A
VD=VG=0V, VS=1.0V
IS=5A, VGS=0V, dI/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
Marking
SOT-23
(Pb-free)
MTN3400N3
3000 pcs / Tape & Reel
3400
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 3/ 7
CYStech Electronics Corp.
Characteristic Curves
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 4/ 7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 5/ 7
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 6/ 7
CYStech Electronics Corp.
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
183°C
217°C
60-150 seconds
240 +0/-5 °C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
MTN3400N3
CYStek Product Specification
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 7/ 7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
3400
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
2.80
1.20
0.89
0.30
1.70
0.013
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
Min.
0.085
0.32
0.85
2.10
0.25
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
J
K
L
S
V
0.0034
0.0128
0.0335
0.0830
0.0098
0.0070
0.0266
0.0453
0.1083
0.0256
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3400N3
CYStek Product Specification
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