MTN3410J3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | MTN3410J3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 1/7
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID
RDS(ON)
100V
50A
25mΩ
MTN3410J3
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTN3410J3
TO-252
G：Gate
G D S
D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
VDS
VGS
ID
100
±30
50
35
150
30
45
22.5
60
0.37
V
ID
A
(Note 1)
IDM
IAS
EAS
EAR
Pd
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
mJ
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation (TC=25℃)
Linear Derating Factor
(Note 2)
W
W/°C
°C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTN3410J3
CYStek Product Specification
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
100
-
0.05
2.5
38
-
-
-
22
-
-
-
4.0
-
100
1
25
25
-
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
1.5
-
-
-
-
-
50
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =5V, ID=30A
GFS
IGSS
±
±
VGS= 30
μA
μA
Ω
m
VDS =80V, VGS =0V
VDS =70V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
IDSS
*RDS(ON)
*ID(ON)
Dynamic
*Qg
A
VDS =10V, VGS =10V
-
-
-
-
-
-
-
-
-
-
-
45
15
25
-
-
-
-
-
-
-
-
-
-
-
nC
ns
ID=30A, VDS=80V, VGS=10V
VDS=50V, ID=1A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
25
200
100
120
9600
275
197
2
Ω
RG=6
pF
VGS=0V, VDS=25V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
Ω
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
-
50
A
150
1.3
-
V
ns
nC
IF=IS, VGS=0V
120
380
IF=25A, VGS=0, dI/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-252
Shipping
Marking
3410
MTN3410J3
2500 pcs / Tape & Reel
(RoHS compliant)
MTN3410J3
CYStek Product Specification
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 3/7
CYStech Electronics Corp.
Characteristic Curves
MTN3410J3
CYStek Product Specificatio
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTN3410J3
CYStek Product Specification
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 5/7
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTN3410J3
CYStek Product Specification
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 6/7
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3410J3
CYStek Product Specification
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 7/7
CYStech Electronics Corp.
TO-252 Dimension
A
C
Marking:
D
B
Device Name
Date code
3410
□□□□
F
G
L
3
2
H
E
K
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Millimeters
Inches
Min. Max.
0.0866 0.1102
Millimeters
DIM
DIM
Min.
Max.
Min.
0.45
1.65
0.90
0.45
6.20
5.40
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
2.20
-
Max.
2.80
*2.30
1.14
0.88
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
G
H
I
J
K
L
-
-
-
*0.0906
0.0449
0.0346
-
-
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3410J3
CYStek Product Specification
相关型号：
©2020 ICPDF网 联系我们和版权申明