S10U100CT [CTC]
Trench MOS Schottky Rectifier;![S10U100CT](http://pdffile.icpdf.com/pdf2/p00351/img/icpdf/S10U100CT_2160705_icpdf.jpg)
型号: | S10U100CT |
厂家: | ![]() |
描述: | Trench MOS Schottky Rectifier |
文件: | 总2页 (文件大小:482K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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S10U100CT
REVERSE VOLTAGE - 100 Volts
FORWARD CURRENT - 10.0 Amperes
Trench MOS Schottky Rectifier
TO-220
FEATURES
‧ Low power loss, high efficiency
‧ Low forward voltage drop
‧ High forward surge capability
‧ High frequency operation
‧ Excellent high temperature stability
‧ Trench MOS Schottky technology
MECHANICAL DATA
‧ Case: TO-220
‧ Polarity: As marked
‧ Weight: Approximated 1.86 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Symbol
VRRM
Value
100
70
Unit
V
VRMS
V
Forward Voltage Drop
Typ.
0.59
0.53
0.69
0.61
Typ.
5
Max.
-
IF=3A
IF=3A
(TJ=25℃)
(TJ=125℃)
VF
-
V
IF=5 A (TJ=25℃)
IF=5 A (TJ=125℃)
Maximum Reverse Current at Rated VRRM
TJ=25°C
0.75
0.65
Max.
50
IR
µA
TJ=125°C
3
10
mA
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IO
10
5
A
A
IFSM
80
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
IRRM
1.0
A
TJ, TSTG
-65 to +150
°C
S10U100CT_V0
1
S10U100CT
Rating and Characteristic Curves
S10U100CT_V0
2
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