S10U50TS [CTC]
Planar MOS SCHOTTKY RECTIFIERS;
| 型号： | S10U50TS |
| 厂家： | 
COMPACT TECHNOLOGY CORP. |
| 描述： | Planar MOS SCHOTTKY RECTIFIERS |
| 文件： | 总2页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S10U50TS
50
10.0
REVERSE VOLTAGE -
FORWARD CURRENT -
Volts
Amperes
Planar MOS SCHOTTKY RECTIFIERS
TO-277
FEATURES
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Excellent high temperature stability
Planar MOS Schottky technology
Suffix "H" indicates halogen free parts,
MECHANICAL DATA
Case: TO-277
NO
A
A2
b1
b2
D
DIM(mm)
1.25±0.1
0.38±0.05
0.9±0.1
NO
e
E1
E2
L
DIM(mm)
Polarity : Color band denotes cathode
Terminals: Pure tin plated, lead free
Mounting position : Any
1.84Typ.
5.3±0.1
3.5±0.1
0.8±0.15
0.6±0.1
1.3±0.2
1.8±0.1
3.95±0.1
3.05 Typ.
6.5±0.1
L1
W
D2
E
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
̺
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
RMS Reverse Voltage
Symbol
VRRM
Value
Unit
V
50
50
V
VRWM
VDC
V
50
35
V
VRMS
Forward Voltage Drop 1)
Typ.
Max.
0.46
-
Max.
300
50
IF=10A, TJ=25°C
I =10A, T =125°C
Maximum Reverse Current at Rated VRRM
TJ=25°C
T =125°C
Maximum Average Forward Rectified Current
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
VF
0.42
0.38
Typ.
120
35
V
IR
IO
µA
mA
A
10
IFSM
280
A
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Voltage rate of change(Rated VR)
IRRM
dv/dt
TJ
2.0
A
V/us
°C
10,000
Operating Temperature Range
-65 to +150
-65 to +175
Storage Temperature Range
TSTG
°C
Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
1 of 2
S10U50TS
2 of 2
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