CGH40120P [CREE]
120 W, RF Power GaN HEMT;
| 型号： | CGH40120P |
| 厂家： | 
CREE, INC |
| 描述： | 120 W, RF Power GaN HEMT |
| 文件： | 总12页 (文件大小：1035K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH40120P
120 W, RF Power GaN HEMT
Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobili
transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a gener
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making th
CGH40120P ideal for linear and compressed amplifier circuits. The transistor is
available in a metal-ceramic pill package.
FEATURES
APPLICATIONS
•
•
•
•
•
•
Up to 2.5 GHz Operation
•
•
•
•
•
2-Way Private Radio
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
120 W Typical PSAT
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
70 % Efficiency at PSAT
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
28 V Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
VGS
-10, +2
-65, +150
225
25˚C
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
30
mA
A
25˚C
25˚C
12
245
˚C
80
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3,4
RθJC
1.32
85˚C
TC
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40120P at PDISS = 115 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
28.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 28.8 mA
VDS = 28 V, ID = 1.0 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
23.2
120
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
VBR
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
Power Gain
GSS
POUT
η
–
–
–
15.5
100
60
–
–
–
dB
W
%
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
Power Output
Drain Efficiency4
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
No damage at all phase angles,
VDD = 28 V, IDQ = 1.0 A,
POUT = 100 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
35.3
9.1
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
1.6
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40120P-AMP
4 Drain Efficiency = POUT / PDC
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGH40120P Rev 3.0
Typical Performance
Gain and Input Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40120-AMP
VDD = 28 V, IDQ = 1.0 A
Output Power, Drain Efficiency and PAE vs Frequency measured in
Broadband Amplifier Circuit CGH40120P-AMP
V
DD = 28 V, IDQ = 1.0 A
200
180
160
140
120
100
80
100%
95%
90%
85%
80%
75%
70%
65%
60%
55%
50%
Output Power
Drain Efficiency
PAE
60
40
20
0
1150
1200
1250
1300
1350
1400
1450
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGH40120P Rev 3.0
Typical Performance
Associated Gain, Output Power, Drain Efficiency and PAE vs Frequency
measured in Broadband Amplifier Circuit CGH40120P-AMP
VDD = 28 V, IDQ = 1.0 A
60
55
50
45
40
35
30
25
20
15
10
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
Output Power
Associated Gain
Drain Efficiency
PAE
1150
1200
1250
1300
1350
1400
1450
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGH40120P Rev 3.0
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120
VDD = 28 V, IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A > 250 V
1 < 200 V
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGH40120P Rev 3.0
CGH40120P CW Power Dissipation De-rating Curve
120
100
80
60
40
20
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
2 + j3.3
Z Load
500
5.14 + j0.04
4.68 - j0.26
3.44 - j0.77
2.34 - j0.95
2.7 - j2.56
1000
1500
2000
2500
3000
0.81 + j0.18
0.75 - j1.56
0.84 - j3
1.2 - j4.43
1.09 - j5.9
3.06 - j3.82
Note 1. VDD = 28V, IDQ = 1.0 A in the 440193 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used
to maintain amplifier stability.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGH40120P Rev 3.0
CGH40120P-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
C1, C30
C2
CAP, 27 PF +/- 5%, 250V, 0805, ATC 600F
CAP, 1.2 pF, +/- 0.1 pF, 0603, ATC 600S
CAP, 3.9 pF, +/- 0.1 pF, 0603, ATC 600S
CAP, 4.7 pF, +/- 0.1 pF, 0603, ATC 600S
CAP, 27pF,+/-5%, 0603, ATC 600S
2
1
2
2
2
2
2
2
1
1
1
2
2
2
1
1
1
1
2
1
1
1
C3, C4
C5, C6
C11, C31
C12, C32
C13, C33
C14, C34
C15
CAP, 100 pF, +/- 5%, 0603, ATC 600S
CAP, 470 pF +/- 5%,100 V, 0603, Murata
CAP, CER, 33000 pF, 100V, X7R, 0805, Murata
CAP, 10 uF, 16V, SMT, TANTALUM
C35
CAP, CER, 1.0 uF, 100V, +/- 10%, X7R, 1210
CAP, 33 uF, 100V, ELECT, FK, SMD
C36
C20, C21
C22, C23
C24, C25
R1
CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F
CAP, 0.5 PF +/- 0.05 pF, 0805, ATC 600F
CAP, 1.2 PF +/- 0.1 pF, 0805, ATC 600F
RES, 1/16W, 0603, 511 Ohms (≤5% tolerance)
RES, 1/16W, 0603, 5.1 Ohms (≤5% tolerance)
IND, 6.8 nH, 0603, L-14C6N8ST
R2
L1
L2
IND, FERRITE, 220 OHM, 0805, BLM21PG221SN1
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4003, Er = 3.38, h = 32 mil
J1, J2
J3
-
Q1
CGH40120P
CGH40120P-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGH40120P Rev 3.0
CGH40120P-AMP Demonstration Amplifier Circuit Schematic
CGH40120P-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGH40120P Rev 3.0
Typical Package S-Parameters for CGH40120P
(Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.961
0.961
0.961
0.961
0.961
0.960
0.960
0.960
0.960
0.960
0.960
0.960
0.960
0.959
0.959
0.959
0.958
0.958
0.957
0.957
0.956
0.956
0.955
0.954
0.953
0.952
0.950
0.948
0.944
0.941
0.936
0.931
0.925
0.917
0.908
0.896
0.883
0.866
0.845
0.820
0.789
-177.60
-178.85
-179.89
179.22
178.41
177.67
176.96
176.28
175.63
174.99
174.36
173.73
173.11
172.49
171.86
171.23
170.59
169.95
169.29
168.63
167.95
167.26
166.56
165.84
165.10
164.34
162.75
161.07
159.27
157.33
155.23
152.94
150.43
147.66
144.59
141.14
137.25
132.84
127.78
121.95
115.17
4.19
3.49
2.99
2.61
2.32
2.09
1.89
1.73
1.60
1.48
1.38
1.30
1.22
1.15
1.10
1.04
0.99
0.95
0.91
0.88
0.85
0.82
0.79
0.77
0.75
0.73
0.70
0.68
0.66
0.65
0.64
0.64
0.64
0.65
0.66
0.68
0.71
0.74
0.78
0.83
0.88
80.16
77.38
74.72
72.16
69.66
67.22
64.83
62.49
60.18
57.92
55.69
53.50
51.35
49.23
47.15
45.09
43.07
41.08
39.12
37.18
35.28
33.39
31.53
29.68
27.86
26.04
22.46
18.91
15.37
11.82
8.23
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.012
0.013
0.014
0.014
0.015
0.016
0.018
0.020
0.023
0.025
0.029
0.033
0.037
0.042
0.048
0.055
0.064
0.074
0.086
0.101
0.118
13.42
15.30
17.30
19.36
21.47
23.59
25.71
27.81
29.86
31.86
33.80
35.65
37.40
39.06
40.61
42.04
43.36
44.56
45.64
46.60
47.45
48.18
48.80
49.32
49.74
50.05
50.40
50.38
50.02
49.32
48.30
46.94
45.24
43.18
40.72
37.83
34.45
30.53
25.97
20.69
14.58
0.807
0.808
0.810
0.811
0.813
0.815
0.817
0.819
0.822
0.824
0.826
0.828
0.830
0.832
0.835
0.837
0.839
0.840
0.842
0.844
0.845
0.847
0.848
0.849
0.850
0.851
0.852
0.852
0.852
0.850
0.848
0.844
0.840
0.834
0.826
0.817
0.805
0.791
0.774
0.755
0.731
-179.57
-179.85
179.89
179.66
179.42
179.18
178.94
178.68
178.41
178.13
177.83
177.52
177.19
176.84
176.47
176.09
175.69
175.28
174.85
174.40
173.93
173.45
172.94
172.43
171.89
171.33
170.17
168.93
167.61
166.19
164.68
163.06
161.32
159.44
157.41
155.20
152.81
150.19
147.33
144.21
140.79
4.57
0.80
-3.12
-7.23
-11.60
-16.29
-21.37
-26.94
-33.09
-39.95
To download the s-parameters in s2p format, go to the CGH40120P Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGH40120P Rev 3.0
Product Dimensions CGH40120P (Package Type — 440206)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGH40120P Rev 3.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH40120P
GaN HEMT
Each
CGH40120P-TB
Test board without GaN HEMT
Each
CGH40120P-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGH40120P Rev 3.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGH40120P Rev 3.0
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