CGH40180PP [CREE]
180 W, RF Power GaN HEMT;型号: | CGH40180PP |
厂家: | CREE, INC |
描述: | 180 W, RF Power GaN HEMT |
文件: | 总13页 (文件大小:2168K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electro
mobility transistor (HEMT). The CGH40180PP, operating from a 28 vo
rail, offers a general purpose, broadband solution to a variety of RF an
microwave applications. GaN HEMTs offer high efficiency, high gain an
wide bandwidth capabilities making the CGH40180PP ideal for linea
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
FEATURES
APPLICATIONS
•
•
•
•
•
•
Up to 2.5 GHz Operation
•
•
•
•
•
2-Way Private Radio
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
220 W typical PSAT
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
70 % Efficiency at PSAT
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
28 V Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
VGS
-10, +2
-65, +150
225
25˚C
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
60
mA
A
25˚C
25˚C
24
245
˚C
80
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3,4
RθJC
0.9
85˚C
TC
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 CGH40180PP at PDISS = 224 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
56.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 57.6 mA
VDS = 28 V, ID = 2.0 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
46.4
120
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 57.6 mA
VBR
–
VDC
RF Characteristics3,4 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Power Gain
PG
GSS
PSAT
η
13
-
-
-
dB
dB
W
VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
VDD = 28 V, IDQ = 2.0 A
Small Signal Gain
Power Output at Saturation5
Drain Efficiency6
19
220
65
–
–
–
180
56
VDD = 28 V, IDQ = 2.0 A
%
VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
No damage at all phase angles,
VDD = 28 V, IDQ = 2.0 A,
POUT = 180 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics7
Input Capacitance
CGS
CDS
CGD
–
–
–
35.7
9.6
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
1.6
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40180PP-AMP, including all coupler losses.
4 IDQ of 2.0 A is by biasing each device at 1.0 A.
5 PSAT is defined as: Q1 or Q2 = IG = 2.8 mA.
6 Drain Efficiency = POUT / PDC
7 Capacitance values are for each side of the device.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
2
CGH40180PP Rev 3.0
www.cree.com/rf
Typical Performance
Gain and Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40180PP-AMP
VDD = 28 V, IDQ = 2.0 A, Freq = 0.8 - 1.7 GHz
24
10
5
21
18
15
12
9
S21
0
-5
S11
-10
-15
-20
-25
-30
S21
S11
6
3
0
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Frequency (MHz)
Output Power and Drain Efficiency vs Frequency
measured in Broadband Amplifier Circuit CGH40180PP-AMP
VDD = 28 V, IDQ = 2.0 A
250
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
Psat
235
220
205
190
175
160
145
130
115
100
Drain Efficiency
Psat
Efficiency
1100
1150
1200
1250
1300
Frequency (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
3
CGH40180PP Rev 3.0
www.cree.com/rf
Typical Performance
Gain and Drain Efficiency vs Output Power measured
in Broadband Amplifier Circuit CGH40180PP-AMP
VDD = 28 V, IDQ = 2.0 A
22
80%
70%
60%
50%
40%
30%
20%
10%
0%
gain 1100
eff 1100
gain 1150
eff 1150
gain 1200
eff 1200
gain 1250
eff 1250
gain 1300
eff 1300
20
18
16
14
12
10
8
Gain
Drain
Efficiency
6
30
32
34
36
38
40
42
44
46
48
50
52
54
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
4
CGH40180PP Rev 3.0
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Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40180PP
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP
VDD = 28 V, IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A > 250 V
1 < 200 V
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
5
CGH40180PP Rev 3.0
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CGH40180PP Power Dissipation De-rating Curve
250
200
150
100
50
Note 1
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
CGH40180PP Transient Power Dissipation De-rating Curve
250
200
150
100
50
Note 1
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle
with no power dissipated during the “off-cycle.”
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
6
CGH40180PP Rev 3.0
www.cree.com/rf
Thermal Resistance as a Function of Pulse Width
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
Time (seconds)
Note 1: This heating curve assumes zero power dissipation during the “off” portion of the duty cycle.
Note 2: This data is for transient power dissipation at 224 W, Duty Cycle = 20 %.
Simulated Source and Load Impedances
D1
Z Source 1
Z Load 1
G1
S
G2
Z Source 2
Z Load 2
D2
Frequency (MHz)
Z Source
2.85 + j1.99
0.8 + j0.42
0.84 - j1.69
0.88 - j3.05
1.08 - j4.5
Z Load
500
5.27 + j0.68
4.91 + j0.36
4.65 - j0.24
2.8 - j1.05
3.1 - j2.47
3.1 - j4.01
1000
1500
2000
2500
3000
1.25 - j6.06
Note 1. VDD = 28V, IDQ = 2.0 A in the 440199 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to
maintain amplifier stability.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
7
CGH40180PP Rev 3.0
www.cree.com/rf
CGH40180PP-AMP Demonstration Amplifier Circuit Schematic
CGH40180PP-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
8
CGH40180PP Rev 3.0
www.cree.com/rf
CGH40180PP-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 100 Ohm, +/-1%, 1 W, 2512
RES, 511 Ohm, +/- 5%, 1/16W, 0603
RES, 1/16W, 0603, 1%, 5.1 OHMS
CAP, 27 pF,+/-5% 0805,ATC600F
CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S
CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S
CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S
CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S
CAP, 0.9PF, +/-0.1 pF, 0603, ATC600S
CAP, 100 pF,+/-5%, 0603,ATC600S
CAP, 470 pF, 5%, 100V, 0603, X7R
CAP, 33000 pF, 0805, 100V, X7R
1
2
2
8
8
2
4
2
2
2
2
4
2
4
2
2
2
2
2
2
2
2
2
2
1
1
R10,R20
R30,R40
C1,C2,C3,C4,C30,C40,C70,C80
C10,C11,C13,C14,C20,C21,C23,C24
C12,C22
C15,C19,C25,C29
C16,C26
C17,C27
C31,C41
C32,C42
C34,C44,C72,C82
C35,C45
C50,C51,C60,C61
C52,C62
C53,C63
C54,C64
C55,C65
C73,C83
C74,C84
L10,L20
CAP, 10 uF, 16V, TANTALUM
CAP, 5.6 pF, +/-0.1 pF, 0805, ATC600F
CAP, 2.7 pF, +/-0.1 pF, 0805, ATC600F
CAP, 2.2 pF, +/-0.1 pF, 0805, ATC600F
CAP, 1.1 pF, +/-0.05 pF, 0805, ATC600F
CAP, 0.5 pF, +/-0.05 pF, 0805, ATC600F
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
CAP, 33 uF, 100V, ELECT, FK, SMD
IND, 6.8 nH, 0603, L-14C6N8ST
L30,L40
FERRITE, 220 OHM, 0603, BLM21PG221SN1
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4350, Er = 3.48, h = 20 mil
CGH40180PP
J1,J2
J3,J4
-
Q1
CGH40180PP-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
9
CGH40180PP Rev 3.0
www.cree.com/rf
Typical Package S-Parameters for CGH40180PP, Single Side
(Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.957
0.957
0.957
0.957
0.957
0.957
0.957
0.957
0.957
0.956
0.956
0.956
0.956
0.955
0.955
0.955
0.954
0.954
0.953
0.952
0.952
0.951
0.950
0.949
0.948
0.946
0.943
0.939
0.935
0.929
0.922
0.913
0.901
0.886
0.866
0.838
0.799
0.742
0.658
0.534
0.373
-177.48
-178.74
-179.78
179.32
178.51
177.76
177.06
176.38
175.72
175.08
174.44
173.81
173.18
172.55
171.91
171.27
170.62
169.96
169.29
168.60
167.90
167.18
166.45
165.69
164.91
164.10
162.39
160.55
158.53
156.31
153.83
151.03
147.82
144.10
139.68
134.36
127.78
119.49
108.92
95.85
4.22
3.51
3.00
2.62
2.33
2.09
1.90
1.73
1.60
1.48
1.38
1.29
1.22
1.15
1.09
1.04
0.99
0.95
0.91
0.87
0.84
0.82
0.79
0.77
0.75
0.73
0.71
0.69
0.67
0.67
0.67
0.68
0.69
0.72
0.76
0.81
0.88
0.97
1.08
1.21
1.34
79.26
76.30
73.47
70.74
68.08
65.49
62.95
60.46
58.02
55.63
53.29
50.98
48.72
46.50
44.32
42.17
40.06
37.98
35.93
33.91
31.92
29.95
28.00
26.07
24.15
22.24
18.45
14.64
10.80
6.86
0.007
0.007
0.007
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.008
0.008
0.009
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.013
0.013
0.014
0.015
0.016
0.018
0.020
0.023
0.027
0.031
0.036
0.042
0.049
0.059
0.073
0.091
0.117
0.157
0.219
0.321
10.74
12.14
13.71
15.38
17.15
18.99
20.87
22.80
24.73
26.66
28.57
30.44
32.25
33.98
35.62
37.17
38.61
39.93
41.14
42.22
43.18
44.01
44.73
45.32
45.79
46.15
46.53
46.47
45.97
45.03
43.63
41.72
39.23
36.07
32.05
26.92
20.30
11.55
-0.34
0.798
0.800
0.802
0.804
0.807
0.809
0.812
0.814
0.817
0.820
0.823
0.825
0.828
0.831
0.833
0.835
0.838
0.840
0.842
0.844
0.845
0.847
0.848
0.849
0.850
0.850
0.851
0.850
0.848
0.845
0.841
0.834
0.825
0.813
0.797
0.775
0.747
0.708
0.657
0.594
0.534
-179.16
-179.41
-179.63
-179.84
179.96
179.74
179.52
179.28
179.03
178.76
178.46
178.15
177.82
177.47
177.10
176.71
176.30
175.87
175.42
174.95
174.47
173.96
173.44
172.89
172.33
171.74
170.51
169.19
167.76
166.21
164.53
162.69
160.65
158.39
155.86
153.00
149.76
146.16
142.31
138.62
134.70
2.78
-1.51
-6.12
-11.16
-16.81
-23.30
-30.99
-40.41
-52.33
-67.76
-87.69
-16.90
-40.38
82.93
To download the s-parameters in s2p format, go to the CGH40180PP Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
10
CGH40180PP Rev 3.0
www.cree.com/rf
Product Dimensions CGH40180PP (Package Type — 440199)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
11
CGH40180PP Rev 3.0
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH40180PP
GaN HEMT
Each
CGH40180PP-TB
Test board without GaN HEMT
Each
CGH40180PP-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
12
CGH40180PP Rev 3.0
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
13
CGH40180PP Rev 3.0
www.cree.com/rf
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