CGH21120F-TB [CREE]
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2;
| 型号： | CGH21120F-TB |
| 厂家： | 
CREE, INC |
| 描述： | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：2849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH21120F
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21120F is a gallium nitride (GaN) high electron mobili
transistor (HEMT) designed specifically for high efficiency, high gain an
wide bandwidth capabilities, which makes the CGH21120F ideal for
1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor i
supplied in a ceramic/metal flange package.
Typical Performance Over 2.0-2.3GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
Units
Gain @ 43 dBm
14.0
15.0
15.0
14.5
dB
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
Note:
-36.5
-36.0
34.5
-34.0
36.5
-33.5
dBc
%
33.5
40.0
Measured in the CGH21120F-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
• 1.8 - 2.3 GHz Operation
• 15 dB Gain
• -35 dBc ACLR at 20 W PAVE
• 35 % Efficiency at 20 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
VGS
Rating
84
Units
Volts
Volts
Watts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
-10, +2
56
25˚C
PDISS
TSTG
TJ
Storage Temperature
-65, +150
225
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
˚C
IGMAX
IDMAX
TS
30
mA
25˚C
25˚C
12
A
245
˚C
80
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3
RθJC
1.5
85˚C
TC
-40, +150
30 seconds
Note:
1
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Measured for the CGH21120F at PDISS = 56 W.
2
3
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
28.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 28.8 mA
VDS = 28 V, ID = 0.5 A
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
23.2
120
–
VBR
–
VDC
RF Characteristics (TC = 25˚C, F0 = 2.15 GHz unless otherwise noted)
Saturated Output Power3,4,5
Pulsed Drain Efficiency3,5
Modulated Gain6
PSAT
–
–
110
70
–
–
W
%
VDD = 28 V, IDQ = 0.5 A,
η
VDD = 28 V, IDQ = 0.5 A, POUT = PSAT
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
GSS
ACLR
η
13.5
–
15
–
dB
dBc
%
WCDMA Linearity6
-35
35
-30
–
Modulated Drain Efficiency6
29
No damage at all phase angles,
VDD = 28 V, IDQ = 0.5 A, POUT = 20 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance7
CGS
CDS
CGD
–
–
–
66
12
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
Feedback Capacitance
1.6
Notes:
1
Measured on wafer prior to packaging.
Scaled from PCM data.
Pulse Width = 40 μS, Duty Cycle = 5 %.
PSAT is defined as IG = 10 mA peak.
Measured in CGH21120F-TB.
2
3
4
5
6
7
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
2
CGH21120F Rev 2.2
Typical Pulse Performance
Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, Freq = 2.15 GHz, Pulse Width = 40 μS, Duty Cycle = 5 %
80
70
60
50
40
30
20
10
0
18
17
16
15
14
13
12
11
10
Gain
Output Power
Drain Efficiency
Gain
Output Power
Efficiency
0
5
10
15
20
25
30
35
40
Input Power (dBm)
Typical Pulsed Saturated Power vs Frequency
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, PSAT = 10 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
52.0
51.5
51.0
50.5
50.0
49.5
49.0
78%
76%
74%
72%
70%
68%
66%
Psat
Drain Efficiency
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
3
CGH21120F Rev 2.2
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequency
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A
20
19
18
17
16
15
14
13
12
11
10
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Gain
Return Loss
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Frequency (GHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 %
VDS = 28 V and 35 V, IDS = 0.5 A, Frequency = 2.15 GHz
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
-41
-42
-43
-44
-45
45%
42%
39%
36%
33%
30%
27%
24%
21%
18%
15%
12%
9%
28V -ACLR
28V +ACLR
35V -ACLR
35V +ACLR
28V Eff
35V Eff
6%
3%
0%
25
30
35
40
45
50
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
4
CGH21120F Rev 2.2
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
Single Channel WCDMA 6.5dB PAR with CFR
VDS = 28 V, IDS = 0.5 A, Frequency = 2.14 GHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
50%
45%
40%
35%
30%
25%
20%
15%
10%
5%
UnCorrected -ACLR
UnCorrected +ACLR
Corrected -ACLR
Corrected +ACLR
UnCorrected Eff
Corrected Eff
0%
15
20
25
30
35
40
45
50
Output Power (dBm)
WCDMA Linearity with DPD Linearizer
of the CGH21120F measured in CGH21120F-TB Amplifier Circuit.
Single Channel WCDMA 6.5dB PAR with CFR
VDS = 28 V, IDS = 0.5 A, POUT = 44 dBm, Efficiency = 40 %
0
Uncorrected
-10
DPD Corrected
-20
-30
-40
-50
-60
-70
-80
-90
2.125
2.13
2.135
2.14
2.145
2.15
2.155
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
5
CGH21120F Rev 2.2
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH21120F
VDD = 28 V, IDQ = 500 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH21120F
VDD = 28 V, IDQ = 500 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
6
CGH21120F Rev 2.2
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2000
2050
2100
2150
2200
2250
2300
18.17 - j15.4
16.88 - j16.5
15.31 - j17.44
13.53 - j18.07
11.63 - j18.35
9.76 - j18.23
8.00 - j17.78
3.43 - j0.24
3.44 - j0.18
3.43 - j0.15
3.42 - j0.12
3.37 - j0.10
3.31 - j0.08
3.22 - j0.06
Note1 VDD = 28V, IDQ = 0.5 A in the 440162 package.
Note2 Impedances are extracted from CGH21120F-TB demonstration
circuit and are not source and load pull data derived from transistor.
CGH21120F Power Dissipation De-rating Curve
70
60
50
40
30
20
10
0
Note 1
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
7
CGH21120F Rev 2.2
CGH21120F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 10 OHMS
RES, 1/16W, 0603, 1%, 5.1 OHMS
CAP, 10 pF, +/-5%, ATC600S
1
1
3
1
2
3
1
1
1
1
1
2
1
2
1
1
1
R2
C1, C3, C8
C2
CAP, 27 pF, +/-5%, ATC600S
C5, C10
CAP, 470 pF, +/-5%, 100V, 0603
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10 uF, 16V, TANTALUM
C6, C11, C18
C7
C9
CAP, 82 pF, +/-5%, ATC600S
C12
C13
C14
C15, C19
C20
J1, J2
J3
CAP 100 uF, 160V, ELECTROLYTIC
CAP, 24 pF, +/-5%, ATC600F
CAP 8.2pF, +/-0.25 ATC600S
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
CAP, 33 uF, +/-20%, G CASE
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4350, Er = 3.48, h = 20 mil
CGH21120F
-
-
CGH21120F-TB Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
8
CGH21120F Rev 2.2
CGH21120F-TB Demonstration Amplifier Circuit Schematic
CGH21120F-TB Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
9
CGH21120F Rev 2.2
Typical Package S-Parameters for CGH21120F
(Small Signal, VDS = 28 V, IDQ = 0.5 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.961
0.960
0.959
0.957
0.955
0.952
0.949
0.944
0.938
0.930
0.920
0.907
0.889
0.863
0.828
0.780
0.715
0.637
0.566
0.541
0.577
0.643
0.708
0.760
0.796
0.821
0.843
0.835
0.799
0.786
0.879
0.951
0.979
0.990
0.994
0.997
0.998
0.998
0.999
0.999
0.999
179.86
178.22
176.75
175.36
173.99
172.61
171.20
169.72
168.15
166.46
164.63
162.63
160.43
158.03
155.48
153.01
151.22
151.48
155.82
164.16
171.39
173.87
172.59
169.28
164.87
159.63
146.16
125.42
88.32
3.67
3.09
2.69
2.40
2.19
2.03
1.91
1.82
1.77
1.74
1.73
1.75
1.80
1.87
1.97
2.10
2.24
2.36
2.42
2.38
2.22
2.01
1.79
1.60
1.44
1.32
1.17
1.13
1.17
1.15
0.84
0.52
0.33
0.22
0.16
0.12
0.10
0.08
0.07
0.06
0.05
68.26
63.27
58.41
53.65
48.94
44.26
39.56
34.81
29.95
24.91
19.59
13.89
7.63
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.008
0.009
0.009
0.010
0.011
0.011
0.013
0.014
0.015
0.017
0.017
0.017
0.017
0.015
0.014
0.013
0.012
0.011
0.010
0.010
0.011
0.011
0.008
0.006
0.004
0.003
0.002
0.002
0.002
0.002
0.002
0.002
0.002
-16.54
-20.46
-24.23
-27.89
-31.47
-35.01
-38.53
-42.08
-45.70
-49.47
-53.47
-57.82
-62.66
-68.22
-74.76
-82.64
-92.25
-103.85
-117.27
-131.60
-145.40
-157.52
-167.55
-175.66
177.73
172.16
162.55
152.13
136.18
109.17
78.81
0.722
0.732
0.744
0.755
0.768
0.780
0.792
0.805
0.817
0.829
0.842
0.854
0.868
0.882
0.897
0.914
0.932
0.948
0.958
0.958
0.949
0.935
0.922
0.912
0.905
0.900
0.894
0.891
0.888
0.886
0.879
0.869
0.856
0.840
0.819
0.789
0.746
0.683
0.589
0.449
0.254
-173.72
-173.18
-172.73
-172.37
-172.12
-171.96
-171.88
-171.88
-171.94
-172.06
-172.23
-172.45
-172.72
-173.07
-173.54
-174.18
-175.11
-176.42
-178.09
-179.89
178.57
177.50
176.84
176.44
176.14
175.88
175.28
174.54
173.59
172.34
170.82
169.25
167.49
165.43
162.96
159.95
156.25
151.66
146.08
140.15
139.99
0.61
-7.46
-16.94
-28.22
-41.58
-56.84
-73.11
-88.96
-103.24
-115.54
-126.07
-135.23
-143.50
-158.98
-175.91
161.01
126.34
87.99
61.47
44.97
33.45
24.22
15.93
7.73
21.79
-50.56
-93.77
-116.72
-130.14
-138.83
-144.91
-149.42
-152.92
-155.72
-158.03
-159.97
60.37
51.78
47.74
45.41
43.34
40.67
-1.09
36.72
-11.28
-23.63
-38.80
30.81
22.20
10.30
Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
10
CGH21120F Rev 2.2
Product Dimensions CGH21120F (Package Type — 440162)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
11
CGH21120F Rev 2.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
12
CGH21120F Rev 2.2
相关型号：
CGH212T500W4L
Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors
CDE
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