CGH21240F [CREE]
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX;
| 型号： | CGH21240F |
| 厂家： | 
CREE, INC |
| 描述： | 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX LTE CD |
| 文件： | 总15页 (文件大小：1701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH21240F
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically with high efficiency, high gain and wide bandwidth capabilitie
which makes the CGH21240F ideal for
1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is supplied in
ceramic/metal flange package.
Typical Performance Over 2.0-2.3GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
Units
Gain @ 46 dBm
13.1
14.6
15.1
15.7
dB
ACLR @ 46 dBm
Drain Efficiency @ 46 dBm
Note:
-36.5
30.5
-34.5
-34.2
32.9
-32.0
33.8
dBc
%
32.7
Measured in the CGH21240F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
•
•
•
•
•
1.8 - 2.3 GHz Operation
15 dB Gain
-35 dBc ACLR at 40 W PAVE
33 % Efficiency at 40 W PAVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
84
Units
Volts
Volts
Watts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
VGS
-10, +2
115
25˚C
PDISS
TSTG
Storage Temperature
-65, +150
225
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
60
mA
A
25˚C
25˚C
24
245
˚C
80
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3
RθJC
0.75
85˚C
TC
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH21240F at PDISS = 115 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
56.0
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 57.6 mA
VDS = 28 V, ID = 1.0 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
46.4
120
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 57.6 mA
VBR
–
VDC
RF Characteristics5 (TC = 25˚C, F0 = 2.14 GHz unless otherwise noted)
Saturated Output Power3,4
Pulsed Drain Efficiency3
Modulated Gain6
PSAT
–
–
215
65
–
–
W
%
VDD = 28 V, IDQ = 1.0 A
η
VDD = 28 V, IDQ = 1.0 A, POUT = PSAT
VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm
VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm
VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm
GSS
ACLR
η
13.5
–
15
–
dB
dBc
%
WCDMA Linearity6
-35
33
-30
–
Modulated Drain Efficiency6
27
No damage at all phase angles, VDD = 28 V, IDQ
= 1.0 A, POUT = 40 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance7
CGS
CDS
CGD
–
–
–
172
19.5
3.2
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 40 μS, Duty Cycle = 5 %.
4 PSAT is defined as IG = 20 mA peak.
5 Measured in CGH21240F-AMP.
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
7 Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGH21240F Rev 3.0
Typical Pulse Performance
Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.0 A, Freq = 2.14 GHz, Pulse Width = 40 μS, Duty Cycle = 5 %
80
70
60
50
40
30
20
10
0
18
17
16
15
14
13
12
11
10
Gain
Output Power
Drain Efficiency
Gain
Output Power
Efficiency
0
5
10
15
20
25
30
35
40
45
Input Power (dBm)
Typical Pulsed Saturated Power and Drain Efficiency vs Frequency
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.0 A, PSAT = 20 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 %
55.0
54.5
54.0
53.5
53.0
52.5
52.0
68
66
64
62
60
58
56
Psat
Drain Efficiency
2.00
2.05
2.10
2.15
2.20
2.25
2.30
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGH21240F Rev 3.0
Typical Linear Performance
Typical Small Signal Gain and Return Loss vs Frequency
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1.0 A
20
19
18
17
16
15
14
13
12
11
10
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Gain
Return Loss
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Frequency (GHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 %
VDS = 28 V, IDS = 1.0 A, Frequency = 2.14 GHz
-29
-31
-33
-35
-37
-39
-41
-43
-45
40
35
30
25
20
15
10
5
-ACLR
+ACLR
Drain Efficiency
0
25
30
35
40
45
50
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGH21240F Rev 3.0
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
Single Channel WCDMA 6.5dB PAR with CFR
VDS = 28 V, IDS = 1.0 A, Frequency = 2.14 GHz
45
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
Uncorrected -ACLR
Corrected -ACLR
Uncorrected +ACLR
Corrected +ACLR
Corrected Drain Eff
40
35
30
25
20
15
10
5
Uncorrected Drain Eff
0
32
34
36
38
40
42
44
46
48
Output Power (dBm)
WCDMA Linearity with DPD Linearizer
of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit.
Single Channel WCDMA 6.5dB PAR with CFR
VDS = 28 V, IDS = 1.0 A, PAVE = 46 dBm, Efficiency = 30 %
0
-10
-20
-30
-40
-50
-60
-70
-80
Uncorrected
DPD Corrected
2.125
2.130
2.135
2.140
2.145
2.150
2.155
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGH21240F Rev 3.0
Typical Performance
Simulated Performance of the CGH21240F from 1.8 - 2.17 GHz
VDD = 28 V, IDQ = 1.0 A
CGH21240F Power Dissipation De-rating Curve
140
120
100
80
Note 1
60
40
20
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGH21240F Rev 3.0
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH21240F
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH21240F
VDD = 28 V, IDQ = 1.0 A
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGH21240F Rev 3.0
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
1900
1950
2000
2050
2100
2150
2200
2250
2300
4.50 - j 4.36
4.28 - j 4.23
4.05 - j 4.04
3.86 - j 3.82
3.69 - j 3.58
3.55 - j 3.32
3.44 - j 3.04
3.36 - j 2.76
3.30 - j 2.47
2.98 - j 0.69
3.17 - j 0.88
3.20 - j 1.22
2.98 - j 1.60
2.52 - j 1.85
1.95 - j 1.85
1.42 - j 1.63
1.00 - j 1.28
0.70 - j 0.86
Note1 VDD = 28V, IDQ = 1.0 A in the 440117 package.
Note2 Impedances are extracted from CGH21240F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGH21240F Rev 3.0
CGH21240F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 100 OHMS
RES, 1/16W, 0603, 1%, 5.1 OHMS
CAP, 27 pF, +/-5%, ATC600S
1
1
1
1
1
2
3
3
1
2
2
1
1
2
2
1
1
1
R2
C1
C2
CAP, 2.0 pF, +/-0.1pF, ATC600S
CAP, 10 pF, +/-5%, ATC600S
C3
C4, C10
C5, C11, C16
C6, C12, C17
C7
CAP, 470 pF, +/-5%, 100V, 0603
CAP, 33000 pF, 0805, 100V, X7R
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
CAP, 10 uF, 16V, TANTALUM
C8, C14
C9, C15
C13
CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC600F
CAP, 10pF, +/-0.1pF, 250V, 0805, ATC600F
CAP 100 uF, 160V, ELECTROLYTIC
CAP, 33 uF, +/-20%, G CASE
C18
C19, C20
J1, J2
J3
CAP, 39pF, +/-5%, 250V, 0805, ATC600F
CONN, N-Type, Female, 0.500 SMA Flange
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4350, Er = 3.48, h = 20 mil
CGH21240F
-
-
CGH21240F-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGH21240F Rev 3.0
CGH21240F-AMP Demonstration Amplifier Circuit Schematic
CGH21240F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGH21240F Rev 3.0
Typical Package S-Parameters for CGH21240F
(Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.983
0.983
0.982
0.981
0.980
0.978
0.976
0.974
0.970
0.966
0.961
0.954
0.947
0.939
0.933
0.931
0.935
0.944
0.954
0.963
0.971
0.976
0.981
0.984
0.986
0.988
0.990
0.991
0.991
0.990
0.988
0.985
0.978
0.968
0.961
0.971
0.984
0.991
0.995
0.996
0.998
179.25
178.45
177.73
177.04
176.38
175.72
175.07
174.42
173.77
173.13
172.51
171.95
171.50
171.24
171.20
171.32
171.39
171.20
170.68
169.89
168.91
167.81
166.63
165.35
164.00
162.54
159.26
155.29
150.30
143.73
134.60
121.09
99.57
1.84
1.56
1.36
1.22
1.12
1.04
0.99
0.95
0.93
0.92
0.92
0.93
0.94
0.95
0.94
0.90
0.83
0.74
0.64
0.54
0.46
0.40
0.34
0.30
0.26
0.24
0.19
0.17
0.15
0.14
0.13
0.14
0.15
0.16
0.16
0.13
0.09
0.06
0.04
0.03
0.03
66.59
61.58
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.005
0.005
0.005
0.005
0.006
0.006
0.006
0.006
0.005
0.005
0.004
0.004
0.003
0.003
0.003
0.003
0.003
0.002
0.002
0.002
0.003
0.003
0.003
0.004
0.005
0.006
0.005
0.004
0.003
0.003
0.002
0.002
-13.75
-16.73
-19.66
-22.56
-25.48
-28.46
-31.57
-34.88
-38.51
-42.62
-47.40
-53.11
-60.04
-68.42
-78.25
-89.09
-100.00
-109.90
-118.09
-124.40
-128.98
-132.17
-134.27
-135.56
-136.27
-136.57
-136.53
-136.31
-136.53
-137.70
-140.42
-145.66
-155.19
-172.15
161.39
133.32
113.61
101.50
93.61
0.823
0.828
0.834
0.841
0.848
0.855
0.862
0.870
0.879
0.888
0.898
0.910
0.925
0.941
0.957
0.971
0.979
0.981
0.979
0.974
0.970
0.966
0.963
0.960
0.959
0.957
0.956
0.955
0.955
0.954
0.954
0.953
0.952
0.951
0.949
0.947
0.943
0.939
0.933
0.926
0.916
-177.25
-176.89
-176.58
-176.31
-176.07
-175.87
-175.71
-175.56
-175.44
-175.35
-175.28
-175.28
-175.39
-175.71
-176.32
-177.25
-178.39
-179.50
179.57
178.85
178.30
177.87
177.52
177.20
176.90
176.61
176.02
175.41
174.76
174.06
173.32
172.52
171.66
170.72
169.70
168.55
167.26
165.81
164.16
162.23
159.94
56.57
51.54
46.42
41.17
35.70
29.94
23.76
16.98
9.40
0.77
-9.23
-20.82
-34.02
-48.37
-62.95
-76.66
-88.79
-99.14
-107.87
-115.25
-121.56
-127.07
-131.94
-136.34
-144.13
-151.15
-157.91
-164.89
-172.75
177.52
164.06
143.65
114.18
83.48
63.52
8.37
-49.39
-89.09
-112.76
-127.38
-137.07
-143.91
61.46
47.31
37.64
30.34
87.89
24.30
83.22
To download the s-parameters in s2p format, go to the CGH21240F Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGH21240F Rev 3.0
Product Ordering Information
Order Number
Description
Unit of Measure
CGH21240F
GaN HEMT
Each
Each
Each
CGH21240F-AMP
CGH21240F-AMP1
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGH21240F Rev 3.0
Product Dimensions CGH21240F (Package Type — 440117)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGH21240F Rev 3.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGH21240F
GaN HEMT
Each
CGH21240F-TB
Test board without GaN HEMT
Each
CGH21240F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
14
CGH21240F Rev 3.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
15
CGH21240F Rev 3.0
相关型号：
CGH212T500W4L
Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors
CDE
©2020 ICPDF网 联系我们和版权申明