C5D25170H [CREE]
Silicon Carbide Schottky Diode;
| 型号： | C5D25170H |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总6页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C5D25170H
VRRM
=
1700 V
33.6 A
Silicon Carbide Schottky Diode
IF,(TC=135˚C) =
®
Z-Rec Rectifierꢀ ꢀ ꢀ ꢀ
Qcꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢁꢀ=ꢀꢀꢀꢀꢀꢀꢀ255ꢀnC
Features
Package
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1.7kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-247-2
Benefits
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Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
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Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
1500V Solar Inverter
Part Number
Package
Marking
C5D25170H
TO-247-2
C5D25170
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
DC Peak Reverse Voltage
1700
1700
V
V
VR
70
33.6
25.6
TC=25˚C
TC=135˚C
TC=150˚C
IF
Continuous Forward Current
A
Fig. 3
99
57
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFRM
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Power Dissipation
A
A
117
88
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
384
167
TC=25˚C
TC=110˚C
Ptot
W
Fig. 4
-55 to
+175
TJ , Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
˚C
1
Nm
M3 Screw
8.8
lbf-in 6-32 Screw
1
C5D25170H Rev. 0, 12-2018
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
V
Test Conditions
IF = 25 A TJ=25°C
Note
Fig. 1
Fig. 2
1.5
2.5
1.8
3.0
VF
Forward Voltage
Reverse Current
IF = 25 A TJ=175°C
20
120
200
300
VR = 1700 V TJ=25°C
VR = 1700 V TJ=175°C
IR
μA
VR = 1700 V, IF = 25A
di/dt = 200 A/μs
TJ = 25°C
QC
Total Capacitive Charge
255
nC
Fig. 5
1950
190
140
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
VR = 1700 V, TJ = 25˚C,f = 1 MHz
C
Total Capacitance
pF
μJ
Fig. 6
Fig. 7
EC
Capacitance Stored Energy
175
VR = 1700 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
Unit
Note
RθJC
Thermal Resistance from Junction to Case
0.39
°C/W
Fig. 8
Typical Performance
1,000
50
900
800
700
600
500
400
300
200
100
0
45
TJ = -55 °C
40
TJ = 25 °C
35
TJ = 75 °C
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
30
TJ = 125 °C
25
TJ = 175 °C
20
15
10
5
0
0.0
1.0
2.0
3.0
4.0
0
400
800
1200
1600
2000
2400
V(V)
F
V (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C5D25170H Rev. 0, 12-2018
Typical Performance
450
400
350
300
250
200
150
100
50
250
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
200
150
100
50
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T ˚C
C
T ˚C
C
C
C
Figure 3. Current Derating
Figure 4. Power Derating
2000
1600
1200
800
400
0
300
250
200
150
100
50
Conditions:
TJ = 25 °C
Ftest = 100 kHz
Vtest = 25 mV
Conditions:
TJ = 25 °C
0
0
300
600
900
1200
1500
1800
0
1
10
100
1000
V (V)
V (V)
R
R
R
Figure 5. Recovery Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
3
C5D25170H Rev. 0, 12-2018
Typical Performance
200
180
160
140
120
100
80
60
40
20
0
0
500
1000
1500
2000
VR(
V
)
Figure 7. Typical Capacitance Stored Energy
1
100E-3
10E-3
1E-3
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
100E-6
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figure 8. Transient Thermal Impedance
4
C5D25170H Rev. 0, 12-2018
Package Dimensions
Inches
Millimeters
POS
Package TO-247-2
Min
Max
Min
Max
5.31
A
A1
A2
b
0.190
0.087
0.059
0.039
0.065
0.015
0.819
0.640
0.112
0.620
0.516
0.135
0.039
0.487
0.205
0.102
0.098
0.055
0.095
0.035
0.845
0.683
0.124
0.640
0.557
0.201
0.075
0.529
4.70
2.21
2.59
1.50
2.49
0.99
1.40
b1
c
1.65
2.41
0.38
0.89
D
20.80
16.25
2.86
21.46
17.35
3.16
D1
D2
E
15.49
13.10
3.43
16.26
14.15
5.10
E1
E2
E3
E4
e
1.00
1.90
12.38
13.43
0.428 BSC
10.88 BSC
L
0.78
-
0.80
0.177
0.144
0.244
0.248
19.81
-
20.32
4.50
3.66
6.20
6.3
L1
ØP
Q
0.138
0.212
0.238
3.51
5.38
6.04
S
T
17.5° REF.
PIN 1
PIN 2
W
X
3.5° REF.
4° REF.
CASE
Y
0
0.5
0
0.02
Recommended Solder Pad Layout
Part Number
Package
Marking
all units are in inches
.4
C5D25170H
TO-247-2
C5D25170
TO-247-2
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C5D25170H Rev. 0, 12-2018
Diode Model
VfT = VT+If*RT
T = 0.94 + (TJ * -1.0*10-3)
V
R
T =ꢀ0.027ꢀ+ꢀ(TJ *ꢀ2.8*10-4)
Note: T = Diode Junction Temperature In Degrees Celsius,
J
valid from 25°C to 175°C
VT
RT
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
6
C5D25170H Rev. 0, 12-2018
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