C527EZ1000-0211-2 [CREE]

EZBright LED Technology Low Forward Voltage; 的EZBright LED技术低正向电压
C527EZ1000-0211-2
型号: C527EZ1000-0211-2
厂家: CREE, INC    CREE, INC
描述:

EZBright LED Technology Low Forward Voltage
的EZBright LED技术低正向电压

文件: 总5页 (文件大小:456K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Cree® EZ1000™ Gen II LEDs  
Data Sheet  
CxxxEZ1000-Sxx000-2  
Cree’sꢀ EZBright™ꢀ LEDsꢀ areꢀ theꢀ nextꢀ generationꢀ ofꢀ solid-stateꢀ LEDꢀ emittersꢀ thatꢀ combineꢀ highlyꢀ efficientꢀ InGaNꢀ  
materialsꢀwithꢀCree’sꢀproprietaryꢀopticalꢀdesignꢀandꢀdeviceꢀsubmountꢀtechnologyꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀhigh-  
intensityꢀLEDs.ꢀTheꢀopticalꢀdesignꢀmaximizesꢀlightꢀextractionꢀefficiencyꢀandꢀenablesꢀaꢀLambertianꢀradiationꢀpattern.ꢀ  
Additionally,ꢀtheseꢀLEDsꢀareꢀdie-attachableꢀwithꢀconductiveꢀepoxy,ꢀsolderꢀpasteꢀorꢀsolderꢀpreforms,ꢀasꢀwellꢀasꢀtheꢀfluxꢀ  
eutecticꢀmethod.ꢀTheseꢀverticallyꢀstructured,ꢀlowꢀforwardꢀvoltageꢀLEDꢀchipsꢀareꢀapproximatelyꢀ170ꢀmicronsꢀinꢀheight.ꢀ  
Cree’sꢀEZ™ꢀchipsꢀareꢀtestedꢀforꢀconformityꢀtoꢀopticalꢀandꢀelectricalꢀspecifications.ꢀꢀTheseꢀLEDsꢀareꢀusefulꢀinꢀaꢀbroadꢀ  
rangeꢀofꢀapplicationsꢀsuchꢀasꢀgeneralꢀillumination,ꢀautomotiveꢀlighting,ꢀandꢀLCDꢀbacklighting.  
FEATURES  
APPLICATIONS  
●ꢀ EZBrightꢀLEDꢀTechnology  
»ꢀ 380ꢀmWꢀmin.ꢀ–ꢀ450ꢀnm  
●ꢀ GeneralꢀIllumination  
»
»
»
»
Aircraft  
»ꢀ 360ꢀmWꢀmin.ꢀ–ꢀ460ꢀnm  
DecorativeꢀLighting  
TaskꢀLighting  
»ꢀ 110ꢀmWꢀmin.ꢀ–ꢀ527ꢀnm  
●ꢀ LambertianꢀRadiation  
●ꢀ ConductiveꢀEpoxy,ꢀSolderꢀPasteꢀorꢀPreforms,ꢀorꢀFluxꢀ  
EutecticꢀAttach  
OutdoorꢀIllumination  
●ꢀ WhiteꢀLEDs  
●ꢀ LowꢀForwardꢀVoltage  
●ꢀ LCDꢀBacklighting  
●ꢀ ProjectionꢀDisplays  
●ꢀ Automotive  
●ꢀ DielectricꢀPassivationꢀacrossꢀEpiꢀSurface  
CxxxEZ1000-Sxx000-2 Chip Diagram  
Die Cross Section  
Bottom View  
Top View  
EZBrightꢀLED  
980ꢀxꢀ980ꢀμm2  
Dielectricꢀ  
Passivation  
Cathodesꢀ(-)  
150ꢀxꢀ150ꢀμm2  
tꢀ=ꢀ170ꢀμm  
BacksideꢀMetalization  
Anodeꢀ(+)  
3 μmꢀAuSn  
GoldꢀBondꢀPadsꢀ(2)  
Subject to change without notice.  
www.cree.com  
1
Maximum Ratings at TA = 25°CNote 1, 2 & 3  
DCꢀForwardꢀCurrent  
CxxxEZ1000-Sxx000-2  
1000ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
1250ꢀmA  
150°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
StorageꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+125°C  
Note 2  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.2  
Max.  
Max.  
Typ.  
20  
C450EZ1000-Sxx000-2  
C460EZ1000-Sxx000-2  
C527EZ1000-Sxx000-2  
2.9  
2.9  
3.0  
3.8  
3.8  
4.0  
2
2
2
3.2  
21  
3.4  
35  
Mechanical Specifications  
Description  
CxxxEZ1000-Sxx000-2  
Dimensions  
Tolerance  
±ꢀ35  
P-NꢀJunctionꢀAreaꢀ(μm)  
ChipꢀAreaꢀ(μm)  
950ꢀxꢀ950  
980ꢀxꢀ980  
170  
±ꢀ35  
ChipꢀThicknessꢀ(μm)  
±ꢀ25  
TopꢀAuꢀBondꢀPadꢀ(μm)ꢀ-ꢀQty.ꢀ2  
AuꢀBondꢀPadꢀThicknessꢀ(μm)  
BackꢀContactꢀMetalꢀAreaꢀ(μm)  
BackꢀContactꢀMetalꢀThicknessꢀ(μm)  
150ꢀxꢀ150  
3.0  
±ꢀ25  
±ꢀ1.5  
±ꢀ35  
980ꢀxꢀ980  
3.0  
±ꢀ1.5  
Notes:  
1.  
Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀ3.45ꢀxꢀ3.45ꢀmmꢀSMTꢀpackageꢀwithoutꢀanꢀ  
encapsulantforcharacterization.Ratingsforotherpackagesmaydiffer.Thejunctiontemperatureshouldbecharacterizedinaꢀ  
specificpackagetodeterminelimitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).SeeCreeꢀ  
EZBrightꢀApplicationsꢀNoteꢀforꢀassembly-processꢀinformation.ꢀ  
2.  
Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andꢀoperatedꢀatꢀ350ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ  
areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀtheꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ  
measurementsꢀwereꢀmadeꢀusingꢀaꢀAu-platedꢀTO39ꢀheaderꢀwithoutꢀanꢀencapsulant.ꢀOpticalꢀcharacteristicsꢀwereꢀmeasuredꢀinꢀanꢀ  
integratingꢀsphereꢀusingꢀIlluminanceꢀE.  
3.  
TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀ  
theꢀend-productꢀtoꢀbeꢀdesignedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀ  
optimizeꢀproductꢀperformance.  
1200  
1000  
800  
600  
Rth j-a = 10 °C/W  
Rth j-a = 15 °C/W  
400  
Rth j-a = 20 °C/W  
Rth j-a = 25 °C/W  
200  
0
25  
50  
75  
100  
125  
150  
175  
Ambient Temperature (˚C)  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright.ꢀEZ1000ꢀandꢀEZꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
USAꢀTel:ꢀ+1.919.313.5300  
Fax:ꢀ+1.919.313.5778  
www.cree.com  
2
CPR3EC Rev. A  
Standard Bins for CxxxEZ1000-Sxx000-2  
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀfromꢀ  
onlyonebin.Sorteddiekit(CxxxEZ1000-Sxx000-2)ordersmaybelledwithanyorallbins(CxxxEZ1000-0xxx-2)ꢀ  
containedꢀinꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ350ꢀmA.ꢀRadiantꢀ  
fluxꢀvaluesꢀareꢀmeasuredꢀusingꢀAu-platedꢀTO39ꢀheadersꢀwithoutꢀanꢀencapsulant.  
C450EZ1000-S38000-2  
C450EZ1000-0221-2  
C450EZ1000-0217-2  
C450EZ1000-0213-2  
C450EZ1000-0209-2  
C450EZ1000-0205-2  
C450EZ1000-0222-2  
C450EZ1000-0218-2  
C450EZ1000-0214-2  
C450EZ1000-0210-2  
C450EZ1000-0206-2  
C450EZ1000-0223-2  
C450EZ1000-0219-2  
C450EZ1000-0215-2  
C450EZ1000-0211-2  
C450EZ1000-0207-2  
C450EZ1000-0224-2  
C450EZ1000-0220-2  
C450EZ1000-0216-2  
C450EZ1000-0212-2  
C450EZ1000-0208-2  
460ꢀmW  
440ꢀmW  
420ꢀmW  
400ꢀmW  
380 mW  
445ꢀnm  
447.5ꢀnm  
450ꢀnm  
452.5ꢀnm  
455ꢀnm  
Dominant Wavelength  
C460EZ1000-S36000-2  
C460EZ1000-0221-2  
C460EZ1000-0217-2  
C460EZ1000-0213-2  
C460EZ1000-0209-2  
C460EZ1000-0205-2  
C460EZ1000-0201-2  
C460EZ1000-0222-2  
C460EZ1000-0223-2  
C460EZ1000-0219-2  
C460EZ1000-0215-2  
C460EZ1000-0211-2  
C460EZ1000-0207-2  
C460EZ1000-0203-2  
C460EZ1000-0224-2  
C460EZ1000-0220-2  
C460EZ1000-0216-2  
C460EZ1000-0212-2  
C460EZ1000-0208-2  
C460EZ1000-0204-2  
460ꢀmW  
440ꢀmW  
420ꢀmW  
400ꢀmW  
380 mW  
360 mW  
C460EZ1000-0218-2  
C460EZ1000-0214-2  
C460EZ1000-0210-2  
C460EZ1000-0206-2  
C460EZ1000-0202-2  
455ꢀnm  
457.5ꢀnm  
460ꢀnm  
462.5ꢀnm  
465ꢀnm  
Dominant Wavelength  
C527EZ1000-S11000-2  
C527EZ1000-0213-2  
C527EZ1000-0210-2  
C527EZ1000-0207-2  
C527EZ1000-0204-2  
C527EZ1000-0201-2  
C527EZ1000-0214-2  
C527EZ1000-0211-2  
C527EZ1000-0208-2  
C527EZ1000-0205-2  
C527EZ1000-0202-2  
C527EZ1000-0215-2  
C527EZ1000-0212-2  
C527EZ1000-0209-2  
C527EZ1000-0206-2  
C527EZ1000-0203-2  
190 mW  
170ꢀmW  
150ꢀmW  
130 mW  
110 mW  
520ꢀnm  
525ꢀnm  
530ꢀnm  
535ꢀnm  
Dominant Wavelength  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright.ꢀEZ1000ꢀandꢀEZꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
USAꢀTel:ꢀ+1.919.313.5300  
Fax:ꢀ+1.919.313.5778  
www.cree.com  
3
CPR3EC Rev. A  
Characteristic Curves  
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀEZBrightꢀ1000.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ  
fluxꢀandꢀdominantꢀwavelengthꢀbins.  
Relative Intensity vs. Forward Current  
Relative Intensity vs. Junction Temperature  
300%  
250%  
200%  
150%  
100%  
50%  
110%  
105%  
100%  
95%  
90%  
85%  
80%  
75%  
70%  
65%  
0%  
25  
25  
25  
50  
75  
100  
125  
150  
0
0
0
250  
500  
750  
1000  
1250  
1250  
5
Junction Temperature (°C)  
If (mA)  
Wavelength Shift vs. Junction Temperature  
Wavelength Shift vs. Forward Current  
6
5
12  
9
4
6
3
3
2
0
1
-3  
-6  
-9  
-12  
0
-1  
-2  
50  
75  
100  
125  
150  
250  
500  
750  
1000  
Junction Temperature (°C)  
If (mA)  
Forward Current vs. Forward Voltage  
Voltage Shift vs. Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
0.100  
0.000  
-0.100  
-0.200  
-0.300  
-0.400  
-0.500  
-0.600  
1
2
3
4
50  
75  
100  
125  
150  
Vf (V)  
Junction Temperature (°C)  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
Fax:ꢀ+1.919.313.5778  
www.cree.com  
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright.ꢀEZ1000ꢀandꢀEZꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
4
CPR3EC Rev. A  
Radiation Pattern  
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀEZBrightꢀPowerꢀChipꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀ  
eachꢀchip.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Copyrightꢀ©ꢀ2009ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀEZBright.ꢀEZ1000ꢀandꢀEZꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
Fax:ꢀ+1.919.313.5778  
www.cree.com  
5
CPR3EC Rev. A  

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