C527EZ1000-SXX000 [CREE]

Cree㈢ EZ1000⑩ LEDs; Cree㈢ EZ1000⑩ LED灯
C527EZ1000-SXX000
型号: C527EZ1000-SXX000
厂家: CREE, INC    CREE, INC
描述:

Cree㈢ EZ1000⑩ LEDs
Cree㈢ EZ1000⑩ LED灯

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中文:  中文翻译
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Cree® EZꢀ000™ LEDs  
Data Sheet  
CxxxEZꢀ000-Sxx000  
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN  
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-  
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.  
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux  
eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height.  
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad  
range of applications such as general illumination, automotive lighting, and LCD backlighting.  
FEATURES  
APPLICATIONS  
EZBright LED Technology  
General Illumination  
200 mW min. - 450, 460 & 470 nm  
300 mW min. - 450, 460 & 470 nm  
80 mW min. - 527 nm  
Aircraft  
Decorative Lighting  
Task Lighting  
130 mW min. - 527 nm  
Outdoor Illumination  
Lambertian Radiation  
White LEDs  
Conductive Epoxy, Solder Paste or Preforms, or Flux  
Eutectic Attach  
LCD Backlighting  
Projection Displays  
Automotive  
Thin 100 μm Chip  
Low Forward Voltage  
CxxxEZꢀ000-Sxx000 Chip Diagram  
Die Cross Section  
Bottom View  
Top View  
EZBright LED  
980 x 980 μm2  
Cathodes (-)  
130 x 130 μm2  
t = 100 μm  
Anode (+)  
3 μm AuSn  
Gold Bond Pads (2)  
Backside Metalization  
Subject to change without notice.  
www.cree.com  
Maximum Ratings at TA = ꢁ5°CNote ꢀ  
DC Forward Current  
CxxxEZꢀ000-Sxx000  
1000 mA  
Peak Forward Current (1/10 duty cycle @ 1 kHz)  
LED Junction Temperature  
1250 mA  
145°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
Storage Temperature Range  
-40°C to +100°C  
-40°C to +125°C  
Note ꢁ  
Typical Electrical/Optical Characteristics at TA = ꢁ5°C, If = 350 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.3  
3.3  
3.3  
3.5  
Max.  
Max.  
Typ.  
20  
C450EZ1000-Sxx000  
C460EZ1000-Sxx000  
C470EZ1000-Sxx000  
C527EZ1000-Sxx000  
2.9  
2.9  
2.9  
3.1  
3.8  
3.8  
3.8  
4.0  
2
2
2
2
21  
22  
35  
Mechanical Specifications  
Description  
CxxxEZꢀ000-Sxx000  
Dimensions  
Tolerance  
± 25  
P-N Junction Area (μm)  
Chip Area (μm)  
950 x 950  
980 x 980  
100  
± 25  
Chip Thickness (μm)  
± 25  
Top Au Bond Pad (μm) - Qty. 2  
Au Bond Pad Thickness (μm)  
Back Contact Metal Area (μm)  
Back Contact Metal Thickness (μm)  
130 x 130  
3.0  
+25/-10  
± 1.0  
980 x 980  
3.0  
± 25  
± 1.0  
Notes:  
1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an  
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a  
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree  
EZBright Applications Note for assembly-process information.  
2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given  
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All  
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an  
integrating sphere using Illuminance E.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
CPR3CR Rev. A  
Standard Bins for CxxxEZꢀ000-Sxx000  
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die  
from only one bin. Sorted die kit (CxxxEZ1000-Sxx000) orders may be filled with any or all bins (CxxxEZ1000-0xxx)  
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant  
flux values are measured using Au-plated TO39 headers without an encapsulant.  
Blue EZꢀ000  
EZ-ꢁ00  
C450EZꢀ000-Sꢁ0000  
300 mW  
270 mW  
240 mW  
200 mW  
C450EZ1000-0113  
C450EZ1000-0109  
C450EZ1000-0105  
C450EZ1000-0114  
C450EZ1000-0115  
C450EZ1000-0111  
C450EZ1000-0107  
C450EZ1000-0116  
C450EZ1000-0112  
C450EZ1000-0108  
C450EZ1000-0110  
C450EZ1000-0106  
445 nm  
447.5 nm  
450 nm  
452.5 nm  
455 nm  
Dominant Wavelength  
C460EZꢀ000-Sꢁ0000  
300 mW  
270 mW  
240 mW  
200 mW  
C460EZ1000-0113  
C460EZ1000-0109  
C460EZ1000-0105  
C460EZ1000-0114  
C460EZ1000-0115  
C460EZ1000-0111  
C460EZ1000-0107  
C460EZ1000-0116  
C460EZ1000-0112  
C460EZ1000-0108  
C460EZ1000-0110  
C460EZ1000-0106  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
C470EZꢀ000-Sꢁ0000  
300 mW  
270 mW  
240 mW  
200 mW  
C470EZ1000-0113  
C470EZ1000-0109  
C470EZ1000-0105  
C470EZ1000-0114  
C470EZ1000-0115  
C470EZ1000-0111  
C470EZ1000-0107  
C470EZ1000-0116  
C470EZ1000-0112  
C470EZ1000-0108  
C470EZ1000-0110  
C470EZ1000-0106  
465 nm  
467.5 nm  
470 nm  
Dominant Wavelength  
472.5 nm  
475 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
3
CPR3CR Rev. A  
Standard Bins for CxxxEZꢀ000-Sxx000 (continued)  
EZ-300  
C450EZꢀ000-S30000  
380 mW  
C450EZ1000-0121  
C450EZ1000-0117  
C450EZ1000-0122  
C450EZ1000-0118  
C450EZ1000-0123  
C450EZ1000-0119  
C450EZ1000-0124  
C450EZ1000-0120  
340 mW  
300 mW  
445 nm  
447.5 nm  
450 nm  
452.5 nm  
455 nm  
Dominant Wavelength  
C460EZꢀ000-S30000  
380 mW  
340 mW  
300 mW  
C460EZ1000-0121  
C460EZ1000-0117  
C460EZ1000-0122  
C460EZ1000-0123  
C460EZ1000-0119  
C460EZ1000-0124  
C460EZ1000-0120  
C460EZ1000-0118  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
C470EZꢀ000-S30000  
380 mW  
340 mW  
300 mW  
C470EZ1000-0121  
C470EZ1000-0117  
C470EZ1000-0122  
C470EZ1000-0123  
C470EZ1000-0119  
C470EZ1000-0124  
C470EZ1000-0120  
C470EZ1000-0118  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
Green EZꢀ000  
EZ-80  
C5ꢁ7EZꢀ000-S08000  
130 mW  
115 mW  
100 mW  
80 mW  
C527EZ1000-0111  
C527EZ1000-0108  
C527EZ1000-0105  
C527EZ1000-0112  
C527EZ1000-0113  
C527EZ1000-0110  
C527EZ1000-0107  
C527EZ1000-0109  
C527EZ1000-0106  
520 nm  
525 nm  
530 nm  
535 nm  
Dominant Wavelength  
EZ-ꢀ30  
C5ꢁ7EZꢀ000-Sꢀ3000  
150 mW  
130 mW  
C527EZ1000-0114  
C527EZ1000-0115  
C527EZ1000-0116  
520 nm  
525 nm  
530 nm  
535 nm  
Dominant Wavelength  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
4
CPR3CR Rev. A  
Characteristic Curves, TA = ꢁ5°C  
This is a representative measurement for the EZ1000 LED product. Actual curves will vary slightly for the various radiant  
flux and dominant wavelength bins.  
Forward Current vs Forward Voltage  
Relative Light Intensity vs Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
100%  
460nm  
527nm  
95%  
460nm  
90%  
527nm  
85%  
80%  
75%  
70%  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
25  
50  
75  
100  
125  
150  
Junction Temperature (C)  
Vf (V)  
Relative Intensity vs Forward Current  
Dominant Wavelength Shift vs Junction Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
4.0  
3.0  
460nm  
527nm  
460nm  
527nm  
2.0  
1.0  
0.0  
60  
40  
-1.0  
-2.0  
20  
0
0
100  
200  
300  
500  
700  
800  
900 1000  
400 If (mA) 600  
25  
50  
75  
100  
125  
150  
Junction Temperature (C)  
Dominant Wavelength Shift vs Forward Current  
Voltage Shift vs Junction Temperature  
10.0  
0.0  
-0.1  
-0.2  
-0.3  
-0.4  
8.0  
460nm  
527nm  
6.0  
460nm  
4.0  
527nm  
2.0  
0.0  
-2.0  
-4.0  
-6.0  
-8.0  
0
100  
200  
300  
400  
500  
600  
700  
800  
900 1000  
25  
50  
75  
100  
125  
150  
If (mA)  
Junction Temperature (C)  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.  
5
CPR3CR Rev. A  
Radiation Pattern  
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for  
each chip.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
6
CPR3CR Rev. A  

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