CPDQR5V0C-HF [COMCHIP]
SMD ESD Protection Diode; SMD ESD保护二极管![CPDQR5V0C-HF](http://pdffile.icpdf.com/pdf1/p00190/img/icpdf/CPDQR5_1071995_icpdf.jpg)
型号: | CPDQR5V0C-HF |
厂家: | ![]() |
描述: | SMD ESD Protection Diode |
文件: | 总4页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
CPDQR5V0C-HF
RoHS Device
Halogen Free
0402/SOD-923F
Features
0.041(1.05)
0.037(0.95)
- Bi-directional ESD protection.
- Surface mount package.
- Ultra small SMD package:0402.
- Operating voltage: 5V.
0.026(0.65)
0.022(0.55)
Mechanical data
0.022(0.55)
0.018(0.45)
- Case: 0402(1005) standard package,
molded plastic.
0.012(0.30) Typ.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Marking Code:
CPDQR5V0C: E5
- Mounting position: Any.
- Weight: 0.001 gram(approx.).
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
7.0
Symbol Min
Max Unit
Parameter
Diode breakdown voltage
Conditions
IR = 1mA
VBD
6.1
V
Leakage current
VR = 5V
IL
0.1
2.0
30
uA
pF
Junction capacitance
VR =0V,f =1MHz
CT
25
ESD
ESD
Vc
16
8
kV
kV
V
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
IPP = 1 A, tp=8/20us
IPP = 4 A, tp=8/20us
ESD capability
9
Clamping Voltage
Peak Pulse Power
Vc
14.5
V
TP=8/20us
PPP
58
W
O
125
150
Operation temperature
Storage temperature
Tj
C
O
TSTG
-55
C
REV:B
Page 1
QW-G7019
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
RATING AND CHARACTERISTIC CURVES (CPDQR5V0C-HF)
Fig. 1 - Reverse characteristics
Fig. 2 - Capacitance between
terminals characteristics
10u
1u
35
30
25
20
100n
10n
15
10
0
20
40
60
80
100
0
1
2
3
4
5
Reverse voltage, (%)
Reverse voltage, (V)
Fig. 4 - Power rating derating curve
Fig.3 - Clamping voltage vs.
peak pulse current
16
Mounting on glass epoxy PCBs
100
14
12
10
8
80
60
40
20
6
Waveform
Parameters:
tr=8us
4
2
0
td=20us
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient temperature, ( °C )
Peak pulse current, (A)
REV:B
Page 2
QW-G7019
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
Leader
.......
.......
.......
.......
.......
.......
Start
End
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
0402
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 ± 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(SOD-923F)
(inch)
0.026± 0.004
0.045± 0.004
0.024± 0.004
0.061± 0.004
7.008± 0.04
2.362 MIN.
0.512± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
0402
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(SOD-923F)
(inch)
0.069± 0.004
0.138± 0.002
0.157± 0.004
0.157± 0.004
0.079± 0.004
0.009± 0.002
0.315± 0.008
0.531 MAX.
REV:B
Page 3
QW-G7019
Comchip Technology CO., LTD.
SMD ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
Marking Code
Marking Code
Part Number
E5
CPDQR5V0C-HF
E5
Suggested PAD Layout
0402/SOD-923F
SIZE
D
A
E
(mm)
(inch)
A
B
C
0.750
0.030
0.500
0.700
0.020
0.028
C
B
D
E
1.250
0.250
0.049
0.010
Standard Packaging
Qty Per Reel
Reel Size
(inch)
Case Type
(Pcs)
0402/SOD-923F
5,000
7
REV:B
Page 4
QW-G7019
Comchip Technology CO., LTD.
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CPDQR5V0HE-HF
Trans Voltage Suppressor Diode, 128W, 5V V(RWM), Bidirectional, 1 Element, Silicon,
COMCHIP
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