CPDQR5V0SP-HF [COMCHIP]
Low Capacitance ESD Protection Diode; 低电容ESD保护二极管
| 型号： | CPDQR5V0SP-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Low Capacitance ESD Protection Diode |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Capacitance ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
CPDQR5V0SP-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 (ESD) ±8kV (Contact) , ±15kV(Air).
0402/SOD-923F
0.041(1.05)
0.037(0.95)
- IEC61000-4-4 (FET) rating. 40A( 5/50uS)
- IEC61000-4-5 (Lightning) rating. 24A( 8/20uS)
- Protects one bi-directional I/O line
- Working Voltage: 5V
0.026(0.65)
0.022(0.55)
- Typical capacitance: 0.3pF
Mechanical data
0.020(0.50)
0.016(0.40)
- Case: 0402/SOD-923F small outline plastic package.
molded plastic.
0.012(0.30)
0.008(0.20)
- Terminals: Matte tin plated, solderable per
MIL-STD-202,method 208.
- Mounting position: Any.
- High temperature soldering guaranteed:
260°C/10 second.
- Weight: 0.001 gram(approx.).
0.022(0.55)
0.018(0.45)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Peak pulse current ( tp = 8/20µs waveform)
PPP
120
W
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
±17
±12
VESD
kV
Junction temperature rang
Storage temperature rang
TJ
-55 to +150
-55 to +150
°C
°C
TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
VRWM
IR
Typ
Parameter
Conditions
Min
-
Max Unit
-
Reverse stand-Off voltage
5
V
uA
V
-
-
-
-
-
-
Reverse leakage current
VR = 5 V
IR = 1 mA
IPP= 1 A
IPP= 2 A
1
Reverse breakdown voltage
V(BR)
6
-
10
12
14
0.5
VC
V
Clamping voltage
-
-
VC
CJ
V
Junction capacitance
pF
VR= 0V , F=1MHz
REV: A
Company reserves the right to improve product design , functions and reliability without notice.
Page 1
QW-JP025
Comchip Technology CO., LTD.
Low Capacitance ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
RATING AND CHARACTERISTIC CURVES (CPDQR5V0SP-HF)
Fig. 1 - Non-Repetitive Peak Pulse
Power vs. Pulse Time
Fig. 2 - Clamping Voltage vs. Peak
Pulse Current
15
10
1
0.1
5
0
0.01
0.1
1
10
100
1000
0
0.5
1.0
1.5
2.0
Pulse Duration, (us)
Peak Current, Ipp( A )
Fig. 3 - Admissible Power Dissipation Curve
Fig. 4 - Typical Junction Capacitance
1.5
100%
80%
60%
1.0
0.5
0
40%
20%
0%
0
5
10
15
20
25
0
20 40 60 80 100 140 160 180
Ambient temperature, ( °C )
Reverse Voltage, ( V )
Fig. 5 - Pulse Waveform
120%
100%
80%
60%
40%
20%
0%
0
5
10
15
20
25
30
Time, (us)
REV: A
Page 2
QW-JP025
Comchip Technology CO., LTD.
Low Capacitance ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
Reel Taping Specification
d
P0
P1
T
E
F
W
B
A
C
P
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
.......
Leader
.......
.......
.......
.......
Start
End
.......
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
A
B
C
d
D
D
1
D
2
SYMBOL
0402
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 + 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(SOD-923F)
(inch)
0.030 ± 0.004 0.045 ± 0.004 0.024 ± 0.004
0.061 + 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
E
F
P
P
0
P
1
1
SYMBOL
T
W
W
0402
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.05
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(SOD-923F)
(inch)
0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.002 0.157 ± 0.004 0.079 ± 0.002 0.009 ± 0.002 0.315 ± 0.008
0.531 MAX.
REV: A
Page 3
QW-JP025
Comchip Technology CO., LTD.
Low Capacitance ESD Protection Diode
Comchip
S M D D i o d e S p e c i a l i s t
Marking Code
Marking Code
Part Number
S
CPDQR5V0SP-HF
S
Product type marking code
Suggested PAD Layout
0402/SOD-923F
SIZE
D
A
E
(mm)
(inch)
A
B
C
0.750
0.030
0.500
0.700
0.020
0.028
C
B
D
E
1.250
0.250
0.049
0.010
Standard Packaging
Qty Per Reel
Reel Size
(inch)
Case Type
(Pcs)
10,000
7
0402/SOD-923F
REV: A
Page 4
QW-JP025
Comchip Technology CO., LTD.
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