CDBJSC51200-G [COMCHIP]
Silicon Carbide Power Schottky Diode;
| 型号： | CDBJSC51200-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Carbide Power Schottky Diode |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBJSC51200-G
Reverse Voltage: 1200 V
Forward Current: 5 A
RoHS Device
TO-220-2
Features
0.409(10.40)
0.394(10.00)
0.181(4.60)
0.173(4.40)
0.152(3.85)
0.148(3.75)
- Rated to 1200V at 5 Amps
0.116(2.95)
0.104(2.65)
0.052(1.32)
0.048(1.23)
0.311(7.90)
0.303(7.70)
- Short recovery time.
- High speed switching possible.
- High frequency operation.
0.260(6.60)
0.244(6.20)
0.620(15.75)
0.600(15.25)
- High temperature operation.
0.646(16.40)
Max.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
0.107(2.72)
0.094(2.40)
0.155(3.93)
0.138(3.50)
Circuit diagram
0.067(1.70)
0.045(1.14)
K(3)
0.551(14.00)
0.512(13.00)
0.028(0.70)
0.019(0.49)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
K(1)
A(2)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Conditions
Value
1200
1200
1200
5
Unit
VRRM
VRSM
VDC
IF
V
V
V
A
A
Typical continuous forward current
Repetitive peak forward surge current
Tc = 150°C
Tc = 25°C, tp = 10ms
IFRM
IFSM
25
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Non-repetitive peak forward surge current
Power dissipation
35
A
Tc = 25°C
109.5
47
PTOT
W
Tc = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
1.37
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Typ
1.45
2.05
20
Max
Unit
IF = 5 A , TJ = 25°C
1.7
Forward voltage
VF
V
IF = 5 A , TJ = 175°C
VR = 1200V , TJ = 25°C
VR = 1200V , TJ = 175°C
100
µA
Reverse current
IR
50
VR = 800V , TJ = 150°C
Total capacitive charge
Total capacitance
QC
C
36
nC
pF
VR
QC = ∫ C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
VR = 400V , TJ = 25°C , f = 1 MHZ
475
34
Typical Characteristics (CDBJSC51200-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
5.0
4.0
3.0
2.0
1.0
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=75°C
T=J 125°C
TJ=175°C
T=J 175°C
TJ=25°C
0
0.5
1.0
1.5
2.0
2.5
0
500
1000
1500
Forward Voltage, VF (V)
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
70
60
50
40
30
20
10
0
500
400
300
200
100
0
10% Duty
30% Duty
50% Duty
70% Duty
D.C.
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC07
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Page 2
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Marking Code
Part Number
CDBJSC51200-G
JSC51200
C
JSC51200
Standard Packaging
TUBE PACK
Case Type
TO-220-2
TUBE
BOX
( pcs )
( pcs )
50
1,000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC07
REV:A
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Comchip Technology CO., LTD.
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