CDBJSC8650-G [COMCHIP]
Silicon Carbide Power Schottky Diode;
| 型号： | CDBJSC8650-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Carbide Power Schottky Diode |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBJSC8650-G
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
TO-220-2
Features
0.409(10.40)
0.394(10.00)
0.181(4.60)
0.173(4.40)
0.152(3.85)
0.148(3.75)
- Rated to 650V at 8 Amps
0.116(2.95)
0.104(2.65)
0.052(1.32)
0.048(1.23)
0.311(7.90)
0.303(7.70)
- Short recovery time.
- High speed switching possible.
- High frequency operation.
0.260(6.60)
0.244(6.20)
0.620(15.75)
0.600(15.25)
- High temperature operation.
0.646(16.40)
Max.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
0.107(2.72)
0.094(2.40)
0.155(3.93)
0.138(3.50)
Circuit diagram
0.067(1.70)
0.045(1.14)
K(3)
0.551(14.00)
0.512(13.00)
0.028(0.70)
0.019(0.49)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
K(1)
A(2)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Conditions
Value
650
650
650
8
Unit
VRRM
VRSM
VDC
IF
V
V
V
A
Typical continuous forward current
Tc = 150°C
Tc = 25°C, tp = 10ms
Repetitive peak forward surge current
IFRM
IFSM
40
80
A
A
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Non-repetitive peak forward surge current
TC = 25°C
102.4
45
Power dissipation
PTOT
W
TC = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
1.465
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-BSC05
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics(at TA=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Typ
1.47
1.78
10
Max
Unit
IF = 8 A , TJ = 25°C
1.7
Forward voltage
VF
V
IF = 8 A , TJ = 175°C
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
100
µA
nC
Reverse current
IR
15
VR = 400V , TJ = 150°C
Total capacitive charge
QC
30
VR
QC = ∫ C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
VR = 200V , TJ = 25°C , f = 1 MHZ
VR = 400V , TJ = 25°C , f = 1 MHZ
560
56.5
54
Total capacitance
pF
C
Typical Characteristics (CDBJSC8650-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
TJ=25°C
TJ=175°C
TJ=125°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=75°C
TJ=25°C
600
0
0.4
0.8
1.2
1.6
2.0
2.4
0
100
200
300
400
500
700
Forward Voltage, VF (V)
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
90
80
70
60
50
40
30
20
10
0
600
550
500
450
400
350
300
250
200
150
100
50
10% Duty
30% Duty
50% Duty
70% Duty
D.C.
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-BSC05
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Marking Code
Part Number
CDBJSC8650-G
JSC8650
C
JSC8650
Standard Packaging
TUBE PACK
Case Type
TUBE
BOX
( pcs )
( pcs )
50
TO-220-2Pin
1,000
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-BSC05
Comchip Technology CO., LTD.
相关型号：
©2020 ICPDF网 联系我们和版权申明