首页 |元器件品牌

CDBFN160-G [COMCHIP]

SMD Schottky Barrier Rectifiers; SMD肖特基势垒整流器
CDBFN160-G
型号： CDBFN160-G
厂家： COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述：

SMD Schottky Barrier Rectifiers
SMD肖特基势垒整流器
文件： 总4页 (文件大小：162K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SMD Schottky Barrier Rectifiers  
SMD Diodes Specialist  
CDBFN120-G Thru CDBFN1100-G  
Voltage: 20 to 100 Volts  
Current: 1.0 Amp  
RoHS Device  
SOD-323  
Features  
-Batch process design, excellent powe  
dissipation offers better reverse leakage  
current .  
0.106 (2.70)  
0.091 (2.3)  
-Low profile surface mounted application  
in order to optimize board space.  
0.012(0.3) Typ.  
-Low power loss, high efficiency.  
-High current capability, low forward voltage  
dorp.  
0.057 (1.45)  
0.041 (1.05)  
-High surge capability.  
-Guardring for overvoltage protection.  
-Very iny plastic SMD package.  
-Ultra high-speed switching.  
-Silicon epitaxial planarchip, metal silicon  
junction.  
0.047 (1.2)  
0.031 (0.8)  
-Lead-free parts meet environmental  
standards of MIL-STD-19500 /228  
0.016(0.4) Typ.  
0.016(0.4) Typ.  
Mechanical data  
-Case: JEDEC SOD-323, Molded plastic  
-Terminals: Solde plated, solderable per  
MIL-STD-750, method 2026.  
Dimensions in inches and (millimeter)  
-Polarity: Indicated by cathode band.  
-Mounting position: Any  
-Weight:0.008 gram(approx.).  
O
Maximum Ratings(at TA=25 C unless otherwise noted)  
CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Maximum RMS voltage  
Unit  
V
120-G 130-G 140-G 150-G 160-G 180-G 1100-G  
VRRM  
VRMS  
VR  
20  
14  
20  
30  
21  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
Continuous reverse voltage  
Maximum forward voltage @IF=1.0A  
Forward rectified current  
V
30  
100  
0.85  
VF  
0.55  
V
0.70  
IO  
1.0  
30  
A
Forward surge current, 8.3ms half sine wave  
superimposed on rated load (JEDEC method)  
IFSM  
IR  
A
@TA=25OC  
Reverse current on VR=VRRM  
0.5  
10  
mA  
@TA=125OC  
O
RθJA  
CJ  
90  
C/W  
pF  
Typ. thermal resistance, junction to ambient air  
120  
Typ. diode junction capacitance (Note 1)  
Operating junction temperature  
OC  
-55 to +125  
-55 to +150  
TJ  
OC  
-65 to +150  
TSTG  
Storage temperature  
Note 1: f=1MHz and applied 4V DC reverse voltage.  
REV:D  
Page 1  
QW-BB022  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
SMD Diodes Specialist  
Ratings and Characteristic Curves(CDBFN120-G Thru CDBFN1100-G)  
Fig.1 Typical Forward Current  
Derating Curve  
Fig.2 Typical Forward Characteristics  
1.3  
1.0  
100  
10  
G
-
0
4
1
N
F
B
D
C
~
C
D
G
-
0
2
1
C
B
N
F
D
F
G
-
B
D
0
B
N
6
C
1
F
1
N
N
F
5
B
0
1
D
C
-
2
0
G
-
G
~
0
0
1
G
-
~
-
0
1
G
5
C
1
N
F
~
N
D
B
D
F
C
B
B
D
C
C
D
1
~
G
-
F
B
N
0
8
F
1
1
N
1
N
F
0
1
B
0
D
4
C
-
0
0.5  
G
-
G
0.1  
0.01  
TJ=25 O  
C
Pulse width 300μs  
1% duty cycle  
0
1.5  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
0
50  
100  
150  
200  
O
TA, Ambient TemperatureC()  
VF, Forward Voltage (V)  
Fig.3 Maximum Non-repetitive Peak  
Forward Surge Current  
Fig.4 Typical Junction Capacitance  
30  
350  
TJ=25 O  
C
8.3ms single half  
sine wave, JEDEC  
method  
300  
250  
24  
18  
12  
6
200  
150  
100  
50  
0
0
0.01  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60Hz  
VR, Reverse Voltage (V)  
Fig.5 Typical Reverse Characteristics  
100  
10  
1
TJ=75 O  
C
C
0.1  
0.01  
TJ=25 O  
60  
0
20  
40  
80  
100  
120  
140  
Percent of Rated Peak Reverse Voltage (%)  
REV:D  
Page 2  
QW-BB022  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
SMD Diodes Specialist  
Reel Taping Specification  
d
P0  
P1  
T
E
F
Index hole  
W
B
Polarity  
C
P
A
1
2
0
o
D2  
D
D1  
W1  
Trailer  
.......  
Device  
Leader  
.......  
.......  
.......  
.......  
.......  
.......  
Start  
End  
.......  
10 pitches (min)  
10 pitches (min)  
Direction of Feed  
SYMBOL  
(mm)  
A
B
C
d
D
D1  
D2  
SOD-323  
SOD-323  
1.47 ± 0.10  
2.95± 0.10  
1.15 ± 0.10  
1.50 ± 0.10  
178 ± 1  
62.0 MIN.  
13.0 ± 0.20  
(inch)  
0.057 ± 0.004  
0.116 ± 0.004  
0.045 ± 0.004  
0.059 ± 0.004  
7.008 ± 0.040  
2.44 MIN.  
0.512 ± 0.008  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
1.75 ± 0.10  
3.50 ± 0.05  
4.00 ± 0.10  
4.00 ± 0.10  
2.00 ± 0.05  
8.00 ± 0.30  
11.4 MAX.  
(inch)  
0.069 ± 0.004  
0.138 ± 0.002  
0.157 ± 0.004  
0.157 ± 0.004  
0.079 ± 0.002  
0.315 ± 0.012  
0.449 MAX  
REV:D  
Page 3  
QW-BB022  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
SMD Diodes Specialist  
Marking Code  
Marking Code  
Park Number  
CDBFN120-G  
CDBFN130-G  
CDBFN140-G  
CDBFN150-G  
CDBFN160-G  
CDBFN180-G  
CDBFN1100-G  
12  
13  
14  
15  
16  
18  
10  
XX  
XX=Product type marking code  
Suggested PAD Layout  
SOD-323  
SIZE  
C
(mm)  
(inch)  
A
A
B
C
0.059  
1.500  
0.039  
0.051  
1.000  
1.300  
B
Standard Package  
Qty per Reel  
(Pcs)  
Reel Size  
(inch)  
Case Type  
SOD-323  
3000  
7
REV:D  
Page 4  
QW-BB022  
Comchip Technology CO., LTD.  

相关型号：

CDBFN160-HF

 SMD Schottky Barrier Rectifiers
COMCHIP

CDBFN180-G

 SMD Schottky Barrier Rectifiers
COMCHIP

CDBFN180-HF

 SMD Schottky Barrier Rectifiers
COMCHIP

CDBFR001A

 SMD Schottky Barrier Diode
COMCHIP

CDBFR00340

 SMD Schottky Barrier Diode
COMCHIP

CDBFR00340-HF

 暂无描述
COMCHIP

CDBFR0130

 SMD Schottky Barrier Diode
COMCHIP

CDBFR0130-HF

 SMD Schottky Barrier Diode
COMCHIP

CDBFR0130L-HF

 SMD Schottky Barrier Diode
COMCHIP

CDBFR0130R

 SMD Schottky Barrier Diode
COMCHIP

CDBFR0130R-HF

 SMD Schottky Barrier Diode
COMCHIP

CDBFR0140L

 SMD Schottky Barrier Diode
COMCHIP
©2020 ICPDF网 联系我们和版权申明