CDBFR0130R [COMCHIP]
SMD Schottky Barrier Diode; SMD肖特基势垒二极管![CDBFR0130R](http://pdffile.icpdf.com/pdf1/p00171/img/icpdf/CDBFR_960286_icpdf.jpg)
型号: | CDBFR0130R |
厂家: | ![]() |
描述: | SMD Schottky Barrier Diode |
文件: | 总4页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Schottky Barrier Diode
CDBFR0130R
Io = 100 mA
VR = 30 Volts
RoHS Device
1005/SOD-323F
Features
-Low reverse current.
0.102(2.60)
0.095(2.40)
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.051(1.30)
0.043(1.10)
Mechanical data
0.035(0.90)
0.027(0.70)
-Case: 1005/SOD-323F standard package
molded plastic.
0.020(0.50) Typ.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BQ
-Mounting position: Any
0.040(1.00) Typ.
-Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Typ
Max Unit
Parameter
Repetitive peak reverse voltage
Conditions
Min
VRRM
V
35
V
Reverse voltage
30
VR
mA
A
Average forward current
IO
100
1
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Forward current,surge peak
IFSM
O
Storage temperature
Junction temperature
TSTG
Tj
-40
+125
+125
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Symbol
Typ
Max Unit
Parameter
Conditions
Min
Forward voltage
IF = 10 mA
VR = 10 V
VF
0.45
V
Reverse current
IR
0.5
uA
REV:A
Page 1
QW-A1114
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBFR0130R)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
100u
10u
1000
100
125O
C
75O
C
10
1u
25O
C
O
C
100n
5
O
2
C
1
5
O
C
1
7
C
-25O
C
5
O
2
5
10n
1n
2
-
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
Fig.4 - Current derating curve
terminals characteristics
100
10
1
f = 1 MHz
Ta = 25 C
100
80
60
40
20
0
0
5
10
15
20
25
30
0
25
50
75
100 125
O
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
Fig. 6 - IR Dispersion map
Fig. 7 - CT Dispersion map
50
360
1000
Ta=25O
C
Ta=25O
C
Ta=25O
C
IF=10mA
n=30pcs
900
800
700
600
500
400
300
200
VR=10V
n=30pcs
45
40
35
30
25
20
15
10
F=1MHz
VR=0V
n=10pcs
350
340
330
AVG:18.8pF
AVG:335mV
AVG:111nA
320
310
100
0
5
0
REV:A
Page 2
QW-A1114
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
Polarity
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
Leader
.......
.......
.......
.......
.......
Start
End
.......
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
1005
(mm)
1.55 ± 0.10
2.65 ± 0.10
1.05 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(SOD-323F)
(inch)
0.061 ± 0.004
0.104 ± 0.004
0.041± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
1005
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(SOD-323F)
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-A1114
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Marking Code
BQ
Part Number
CDBFR0130R
BQ
Suggested PAD Layout
1005/SOD-323F
SIZE
(mm)
(inch)
D
A
A
B
C
2.00
0.079
0.70
1.30
0.028
0.051
E
C
D
E
2.70
1.30
0.106
0.051
B
Standard Package
Qty per Reel
Reel Size
(inch)
Case Type
(Pcs)
1005/SOD-323F
4000
7
REV:A
Page 4
QW-A1114
Comchip Technology CO., LTD.
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