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CDBFN120-HF_12 [COMCHIP]

SMD Schottky Barrier Rectifiers; SMD肖特基势垒整流器
CDBFN120-HF_12
型号： CDBFN120-HF_12
厂家： COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述：

SMD Schottky Barrier Rectifiers
SMD肖特基势垒整流器
文件： 总4页 (文件大小：95K)
中文：  中文翻译
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SMD Schottky Barrier Rectifiers  
CDBFN120-HF Thru CDBFN1100-HF  
Voltage: 20 to 100 Volts  
Current: 1.0 Amp  
RoHS Device  
Halogen free  
Features  
SOD-323  
-Batch process design, excellent powe  
dissipation offers better reverse leakage current.  
-Low profile surface mounted application  
in order to optimize board space.  
0.106 (2.70)  
0.091 (2.30)  
0.012(0.3) Typ.  
-Low power loss, high efficiency.  
-High current capability, low forward voltage dorp.  
-High surge capability.  
0.057 (1.45)  
0.041 (1.05)  
-Guardring for overvoltage protection.  
-Very iny plastic SMD package.  
-Ultra high-speed switching.  
-Silicon epitaxial planarchip, metal silicon junction.  
-Lead-free parts meet environmental  
standards of MIL-STD-19500 /228  
0.047 (1.2)  
0.031 (0.8)  
Mechanical data  
0.016(0.4) Typ.  
0.016(0.4) Typ.  
-Case: JEDEC SOD-323, Molded plastic  
-Terminals: Solde plated, solderable per  
MIL-STD-750, method 2026.  
-Polarity: Indicated by cathode band.  
-Mounting position: Any  
Dimensions in inches and (millimeter)  
-Weight:0.008 gram(approx.).  
Maximum Ratings (at TA=25°C unless otherwise noted)  
CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN  
120-HF 130-HF 140-HF 150-HF 160-HF 180-HF 1100-HF  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Maximum RMS voltage  
Unit  
V
VRRM  
VRMS  
VR  
20  
14  
20  
30  
21  
40  
28  
50  
35  
60  
42  
60  
80  
56  
100  
70  
V
Continuous reverse voltage  
Maximum forward voltage @IF=1.0A  
Forward rectified current  
V
30  
40  
50  
80  
100  
0.55  
0.70  
0.85  
VF  
V
A
1.0  
30  
IO  
Forward surge current, 8.3ms half sine wave  
superimposed on rated load (JEDEC method)  
A
IFSM  
IR  
Reverse current on VR=VRRM @TA=25°C  
@TA=125°C  
0.5  
10  
mA  
Typ. thermal resistance, junction to ambient air  
Typ. diode junction capacitance (Note 1)  
Operating junction temperature  
RθJA  
CJ  
90  
°C/W  
pF  
120  
-55 to +125  
-55 to +150  
TJ  
°C  
°C  
Storage temperature  
-65 to +175  
TSTG  
Note 1: f=1MHz and applied 4V DC reverse voltage.  
REV:B  
Page 1  
QW-JB001  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
Ratings and Characteristic Curves(CDBFN120-HF Thru CDBFN1100-HF)  
Fig.1 Typical Forward Current  
Derating Curve  
Fig.2 Typical Forward Characteristics  
1.3  
1.0  
100  
F
H
-
0
4
1
N
F
B
D
C
~
C
D
F
10  
1
H
-
0
2
C
D
1
B
F
N
H
-
0
F
F
N
1
5
B
B
F
6
D
1
C
N
F
B
N
D
F
H
-
0
C
1
0
~
F
2
0
-
H
0
H
1
-
1
N
F
0
5
F
-
1
H
N
F
B
B
D
~
F
C
C
~
D
~
F
C
D
H
-
C
0
8
1
B
D
F
N
F
B
N
B
D
C
F
1
1
0.5  
N
0
1
4
0
-
0
H
-
H
F
F
0.1  
0.01  
TJ=25 O  
C
Pulse width 300μs  
1% duty cycle  
0
1.5  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
0
50  
100  
150  
200  
TA, Ambient Temperature (OC)  
VF, Forward Voltage (V)  
Fig.3 Maximum Non-repetitive Peak  
Fig.4 Typical Junction Capacitance  
Forward Surge Current  
30  
350  
TJ=25 O  
C
8.3ms single half  
sine wave, JEDEC  
method  
300  
250  
24  
18  
12  
6
200  
150  
100  
50  
0
0
0.01  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60Hz  
VR, Reverse Voltage (V)  
Fig.5 Typical Reverse Characteristics  
100  
10  
1
TJ=75 O  
C
C
0.1  
TJ=25 O  
60  
0.01  
0
20  
40  
80  
100  
120  
140  
Percent of Rated Peak Reverse Voltage (%)  
REV:B  
Page 2  
QW-JB001  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Diode  
Reel Taping Specification  
d
P0  
T
P1  
E
F
Index hole  
W
B
Polarity  
C
P
A
1
2
0
o
D2  
D
D1  
W1  
Trailer  
.......  
Device  
Leader  
.......  
.......  
.......  
.......  
.......  
.......  
Start  
End  
.......  
10 pitches (min)  
10 pitches (min)  
Direction of Feed  
SYMBOL  
A
B
C
d
D
D1  
D2  
(mm)  
SOD-323  
SOD-323  
1.47 ± 0.10  
2.95± 0.10  
1.15 ± 0.10  
1.50 ± 0.10  
178 ± 1  
62.0 MIN.  
13.0 ± 0.50  
(inch)  
0.057 ± 0.004  
0.116 ± 0.004  
0.045 ± 0.004  
0.059 ± 0.004  
7.008 ± 0.040  
2.44 MIN.  
0.512 ± 0.0197  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
1.75 ± 0.10  
3.50 ± 0.10  
4.00 ± 0.10  
4.00 ± 0.10  
2.00 ± 0.10  
8.00 ± 0.30  
11.4 ± 0.04  
(inch)  
0.069 ± 0.004  
0.138 ± 0.004  
0.157 ± 0.004  
0.157 ± 0.004  
0.079 ± 0.004  
0.315 ± 0.012  
0.449± 0.0016  
REV:B  
Page 3  
QW-JB001  
SMD Schottky Barrier Diode  
Marking Code  
Marking Code  
Park Number  
CDBFN120-HF  
CDBFN130-HF  
CDBFN140-HF  
12  
13  
14  
X X  
CDBFN150-HF  
CDBFN160-HF  
CDBFN180-HF  
CDBFN1100-HF  
15  
16  
18  
10  
Suggested PAD Layout  
SOD-323  
SIZE  
C
(mm)  
(inch)  
A
A
B
C
1.500  
0.059  
1.000  
1.300  
0.039  
0.051  
B
Standard Packaging  
Qty per Reel  
(Pcs)  
Reel Size  
(inch)  
Case Type  
SOD-323  
3000  
7
REV:B  
Page 4  
QW-JB001  
Comchip Technology CO., LTD.  

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