CDBF0520L-HF [COMCHIP]
SMD Schottky Barrier Diode; SMD肖特基势垒二极管型号: | CDBF0520L-HF |
厂家: | COMCHIP TECHNOLOGY |
描述: | SMD Schottky Barrier Diode |
文件: | 总4页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Schottky Barrier Diode
SMD Diodes Specialist
(RoHS Device)
CDBF0520L-HF
VR = 20 Volts
IO = 500 mA
1005(2512)
Features
0.102(2.60)
0.095(2.40)
Halogen free.
Low forward voltage.
0.051(1.30)
0.043(1.10)
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.035(0.90)
0.027(0.70)
Mechanical data
0.020(0.50) Typ.
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012 (0.30) Typ.
0.040(1.00) Typ.
Marking code: cathode band & BM
Mounting position: Any
Dimensions in inches and (millimeter)
Weight: 0.006 gram(approx.).
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Parameter
Peak reverse voltage
Reverse voltage
Conditions
Min Typ Max Unit
VRM
VR
IO
20
20
V
V
A
A
Average forward rectified current
0.5
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Forward current,surge peak
Storage temperature
IFSM
TSTG
Tj
5.5
O
-40
-40
+125
C
O
Junction temperature
+125
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Min
Max Unit
O
IF = 100mA @Ta = 25 C
Forward voltage
300
O
IF = 500mA @Ta = 25 C
385
mV
VF
IR
O
IF = 100mA @Ta = 100 C
O
220
330
IF = 500mA @Ta = 100 C
O
Reverse current
75
VR = 10V @Ta = 25 C
uA
O
250
VR = 20V @Ta = 25 C
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
pF
ns
CT
Trr
170
IF = IR = 10mA, Irr x IR, RL = 100ohm
22
REV:A
Page 1
QW-G1093
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0520L-HF)
Fig. 2 - Reverse characteristics
Fig. 1 - Forward characteristics
100m
1000
100
10
C
C
75
10m
1m
C
5
C
C
2
C
1
5
5
5
7
2
2
25
-
100u
10u
1
-25
C
1u
0.1u
0.1
0.0 0.1
30
10
20
0.3
Forward voltage (V)
0.5
0.6
0.2
0.4
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig. 4 - Current derating curve
120
100
80
120
100
80
60
40
20
0
f=1MHz
Ta = 25 C
60
40
20
0
0
25
50
75
100
125
150
20
0
5
10
15
Ambient temperature ( C )
Reverse voltage : (V)
REV:A
Page 2
QW-G1093
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
Polarity
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
Device
Leader
.......
.......
.......
.......
.......
.......
.......
.......
Start
End
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
(mm)
1.55 ± 0.10
2.65 ± 0.10
1.05 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
F/1005
F/1005
(inch)
0.061 ± 0.004
0.104 ± 0.004
0.041± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-G1093
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Marking Code
BM
Park Number
BM
CDBF0520L-HF
Suggested PAD Layout
F/1005
SIZE
(mm)
(inch)
D
A
A
B
C
2.10
0.083
1.20
1.20
0.047
0.047
E
C
D
E
3.30
0.90
0.130
0.035
B
Standard Package
Qty per Reel
(Pcs)
Reel Size
(inch)
Case Type
F/1005
4000
7
REV:A
Page 4
QW-G1093
Comchip Technology CO., LTD.
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