CDBF0530 [COMCHIP]

SMD Schottky Barrier Diode; SMD肖特基势垒二极管
CDBF0530
型号: CDBF0530
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

SMD Schottky Barrier Diode
SMD肖特基势垒二极管

整流二极管
文件: 总2页 (文件大小:122K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDBF0530  
Io = 500 mA  
VR = 20 Volts  
1005(2512)  
Features  
0.102(2.60)  
0.095(2.40)  
Low forward voltage.  
Designed for mounting on small surface.  
Extremely thin / leadless package.  
Majority carrier conduction.  
0.051(1.30)  
0.043(1.10)  
Mechanical data  
0.035(0.90)  
0.027(0.70)  
Case: 1005(2512) standard package,  
molded plastic.  
0.020(0.50) Typ.  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.012 (0.30) Typ.  
Polarity: Indicated by cathode band.  
Mounting position: Any  
0.040(1.00) Typ.  
Weight: 0.006 gram(approx.).  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Parameter  
Peak reverse voltage  
Reverse voltage  
Conditions  
Min Typ Max Unit  
VRM  
VR  
IO  
30  
20  
V
V
A
A
Average forward rectified current  
0.5  
8.3 ms single half sine-wave superimposed  
on rate load (JEDEC method)  
Forward current,surge peak  
Storage temperature  
IFSM  
TSTG  
Tj  
2
O
-40  
+125  
C
O
Junction temperature  
+125  
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Min  
Max Unit  
Forward voltage  
IF = 100mA  
IF = 500mA  
0.36  
0.47  
VF  
V
Reverse current  
VR = 20V  
IR  
100  
uA  
pF  
Capacitance between terminals  
f = 1 MHz, and 0 VDC reverse voltage  
CT  
100  
REV:A  
Page 1  
QW-A1104  
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
RATING AND CHARACTERISTIC CURVES (CDBF0530)  
Fig. 1 - Forward characteristics  
Fig. 2 - Reverse characteristics  
100m  
10m  
1000  
100  
100O  
C
1m  
100u  
10u  
75O  
C
25O  
C
10  
1
C
O
C
O
C
C
O
O
5
5
5
5
2
2
-
7
2
1
-25O  
C
1u  
0.1u  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0
5
10  
15  
20  
Forward voltage (V)  
Reverse voltage (V)  
Fig. 3 - Capacitance between  
terminals characteristics  
Fig.4 - Current derating curve  
120  
100  
60  
50  
40  
30  
20  
10  
0
f=1MHz  
Ta=25OC  
80  
60  
40  
20  
0
0
5
10  
15  
20  
0
25  
50  
75  
100  
125 150  
O
Reverse voltage (V)  
Ambient temperature ( C)  
REV:A  
Page 2  
QW-A1104  

相关型号:

CDBF0530-HF

SMD Schottky Barrier Diode
COMCHIP

CDBF0540

SMD Schottky Barrier Diode
COMCHIP

CDBF0540-G

Rectifier Diode,
COMCHIP

CDBF0540-HF

SMD Schottky Barrier Diode
COMCHIP

CDBF40

SMD Schottky Barrier Diode
COMCHIP

CDBF40-HF

SMD Schottky Barrier Diode
COMCHIP

CDBF42

SMD Schottky Barrier Diode
COMCHIP

CDBF42-43-HF

SMD Schottky Barrier Diode
COMCHIP

CDBF42-G

Rectifier Diode,
COMCHIP

CDBF42-HF

SMD Schottky Barrier Diode
COMCHIP

CDBF43

SMD Schottky Barrier Diode
COMCHIP

CDBF43-G

Rectifier Diode,
COMCHIP