BAS21 [COMCHIP]

Surface Mount Switching Diode; 表面贴装开关二极管
BAS21
型号: BAS21
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

Surface Mount Switching Diode
表面贴装开关二极管

整流二极管 开关 光电二极管
文件: 总2页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount Switching Diode  
COOMMCCHHIIPP  
www.comchip.com.tw  
BAS21  
Voltage: 250 Volts  
Current: 0.2Amp  
Feature  
SOT-23  
High Voltage Switching Diode  
.119 (3.0)  
.110 (2.8)  
Surface Mount Package Ideally Suited for  
.020 (0.5)  
Automatic Insertion  
Top View  
For General Purpose Switching  
Applications  
Mechanical Data  
Case: SOT -23, Plastic  
Terminals : Solderable per NIL-STD -202,  
Method 208  
.037(0.95)  
.037(0.95)  
Approx. Weight: 0.008 gram  
.103 (2.6)  
.086 (2.2)  
.020 (0.5) .020 (0.5)  
Dimensions in inches (millimeters)  
Maximum Ratings  
Rating  
Symbol  
Value  
Units  
VR  
VDC  
Continuous Reverse Voltage  
Peak Forward Current  
250  
IF  
200.0  
625  
mAdc  
mAdc  
IFSM(surge)  
Peak Surge Forward Current  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
225.0  
1.8  
Units  
mW  
mW/°C  
°C/W  
Total Device Dissipation FR– 5 Board(1)  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
TA = 25°C  
PD  
R
556.0  
JA  
Total Device Dissipation Alumina Substrate,(2) TA = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
°C/W  
°C  
PD  
R
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
JA  
417  
–55 to +150  
TJ, Tstg  
Electrical Characterics (TA = 25°C unless otherwise noted)  
Characteristic  
Reverse Voltage Leakage Current VR = 200 Vdc  
VR = 200 Vdc, TJ = 150°C  
Reverse Breakdown Voltage (BR = 100 Adc)  
Forward Voltage F = 100 mAdc  
F = 200 mAdc  
Min  
Symbol  
Max  
1.0  
Units  
-
IR  
uAdc  
100  
-
1000  
1250  
-
250  
V(BR)  
VF  
Vdc  
mV  
Diode Capacitance (VR = 0, f = 1.0 MHz))  
CD  
Trr  
5
pF  
nS  
Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 )  
50  
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.  
Page 1  
MDS0209006A  
Surface Mount Switching Diode  
COMCHIP  
www.comchip.com.tw  
RATINGAND CHARACTERISTIC CURVES (BAS21)  
820  
+10 V  
2 k  
0.1 µF  
I
F
t
t
t
r
p
I
F
100 µH  
t
t
10%  
90%  
0.1  
µF  
rr  
DUT  
50  
Οutput  
Pulse  
Generator  
50  
Sampling  
Oscilloscope  
Input  
I
= 1 mA  
R(REC)  
I
R
V
R
Output Pulse  
(I = I = 10 mA; measured  
Input Signal  
F
R
at I  
= 1 mA)  
R(REC)  
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
3500  
7000  
6000  
5000  
4000  
3000  
T
= 155°C  
3000  
2500  
2000  
1500  
1000  
A
T
= –55  
= 155  
°
C
C
A
6
5
4
3
2
1
0
T
°
A
T
= 25°C  
A
T
= 25°C  
A
500  
0
T
= –55  
20  
°C  
A
0.1  
0.2  
0.5  
1
2
5
10  
20  
50 100  
200  
1
2
5
10  
50  
100  
200 300  
Forward Current (mA)  
Reverse Voltage (V)  
Figure 2. Forward Voltage  
Figure 3. Reverse Leakage  
Page 2  
MDS0209006A  

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