MHF04N60CT [CITC]
Silicon N-Channel Power MOSFET;
| 型号： | MHF04N60CT |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | Silicon N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：1339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
Main Product Characteristics
■ Outline
ID
4A
VDSS
PD(TC=25oC)
600V
30W
1.8Ω
TO-220F
RDS(ON)Typ
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge. (Typical Data:14.5nC)
• Low reverse transfer capacitances.(Typical:8.5pF)
• 100% single pulse avalanche energy test.
1.Gate 2.Drain 3.Source
Drain
■ Application
• Power switch circuit of adaptor and charger.
■ Mechanical data
Gate
• Epoxy:UL94-V0 rated flame retardant
• Case : JEDEC TO-220F molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Source
Inner Equivalent principium Chart
■ Absolute(TC = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MHF04N60CT
UNIT
V
Drain to Source Voltage
600
Continuous Drain Current
4
ID
TC = 100OC
A
Continuous Drain Current
3.2
IDM
VGS
EAS
IAR
Pulsed Drain Current(Note:1)
Gate to Source Voltage
16
±30
V
mJ
A
Single Pulse Avalanche Energy(Note:2)
Avalanche Current(Note:1)
200
2.5
Avalanche Energy, Repetitive (Note:1)
EAR
30
mJ
Power Dissipation
Derating factor above 25OC
30
0.24
W
Power Dissipation
PD
W/OC
V/ns
V
OC
OC
Peak Diode Recovery dv/dt(Note:3)
Gate source ESD
dV/dt
VESD(G-S)
TJ, TSTG
TL
5.0
HBM-C = 100pF, R = 1.5kΩ
3000
Operating Junction and Storage Temperature Range
Maximum temperature for soldering
150,-55 ~ +150
300
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, ID = 6.3A, Start TJ = 25OC.
3.ISD =4A,di/dt ≤100A/µs, VDD≤BVDS, Start TJ = 25OC.
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
1
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Electrical characteristics(TC = 25OC unless otherwise specified)
■ OFF Characteristics
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
VDSS
PARAMETER
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
VGS = 0V, ID = 250µA
600
V
ID = 250µA, Reference 25OC
VDS = 600V, VGS = 0V, Ta = 25°C
VDS = 480V, VGS = 0V, Ta = 125°C
VGS = +20V
ΔBVDSS /ΔTJ
0.67
V/OC
1
Drain to Source Leakage Current
IDSS
100
10
µA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
IGSS(F)
IGSS(R)
VGS = -20V
-10
■ ON Characteristics
PARAMETER
CONDITIONS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2A
Symbol MIN. TYP. MAX. UNIT
VGS(th)
Gate Threshold Voltage
2.0
4.0
2.3
V
RDS(on)
Drain-to-Source On-Resistance
1.8
Ω
Pulse Width tp≤380µs,δ≤2%
■ Dynamic Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
gfs
VDS = 15V, ID = 2A
Forward Trans conductance
Input Capacitance
3.5
544
55
S
Ciss
Coss
Crss
Output Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Reverse Transfer Capacitance
8.5
■ Resistive Switching Characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
td(ON)
8.5
Turn-on Delay Time
Rise Time
tr
6.5
ID = 4A, VDD = 300V, RG = 4.7Ω
ns
td(OFF)
Turn-off Delay Time
Fail Time
31
tf
8.5
Qg
Total Gate Charge
14.5
Qgs
Gate to Source Charge
Gate to Drain (”Miller”) Charge
ID = 4A, VDD = 300V, VGS = 10V
2.8
6.3
nC
Qgd
■ Source-Drain Diode Characteristics
PARAMETER
CONDITIONS
Boby Diode
Symbol MIN. TYP. MAX. UNIT
IS
ISM
VSD
trr
Continuous Source Current
Maximum Pulse Current
Diode Forward Voltage
4
A
Boby Diode
16
1.5
IS = 4.0A, VGS = 0V
V
IS = 4A, TJ = 25OC, dIF/dt = 100A/μs,
VGS = 0V
Reverse recovery time
ns
430
Reverse recovery charge
Qrr
1270
nC
Pulse Width tp≤300µs,δ≤2%
■ Thermal characteristics
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
RθJC
RθJA
Junction to Case
4.17
100
Thermal Resistance
OC/W
Junction to Ambient
■ Gate-source Zener Diode
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Gate-Source Breakdown Voltage
IGS = ±1mA(open Drain)
VGSO
30
V
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
2
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.1- Maximum Forward Bias Safe Operating Area
Fig.2- Maximum Power Dissipation vs Case Temperature
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃Single Pulse
Case Temperature , Tc, (C)
Drain-to-Source Voltage , Vds (V)
Fig.3- Maximum Continuous Drain Current VS Case Temperaure
Fig.4- Typical Output Characteristics
Drain-to-Source Voltage , Vds (V)
Case Temperature , Tc, (C)
Fig.5- Maximum Effective Thermal Impendence, Junction to Case
NOTES：
DUTY FACTOR ：D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
Rectangular Pulse Duration,(S)
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
3
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.6- Maximum Peak Current Capability
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
125
I = I 25
P u lse W id th , (S)
Fig.8- Typical Drain to Source ON Resistance vs Gate
Voltage and Drain Current
Fig.7- Typical Transfer Characteristics
-55oC
+25oC
+150oC
Gate to Source Voltage, Vgs (V)
Gate to Source Voltag，e, Vgs (V)
Fig.10- Typical Drain to Source ON resistance
vs Junction Temperature
Fig.9- Typical Drain to Source ON resistance vs Drain Current
℃
Junction temperature ,Tj (C)
Drain Current , Id (A)
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
4
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Rating and characteristic curves
Fig.11- Typical Threshold Voltage vs Junction Temperature
Fig.12- Typical Breakdown Voltage vs Junction Temperature
Junction temperature ,Tj (C)
Junction temperature ,Tj (C)
Fig.13- Typical Capacitance vs Drain to Source Voltage
Fig.14- Typical Gate Charge vs Gate to Source Voltage
Drain-to-Source Voltage , Vds (V)
Total Gate Charge , Qg, (nC)
Fig.15- Typical Body Diode Transfer Characteristics
Fig.16- Unclamped Inductive Switching Capability
℃
℃
+150℃
+25℃
-55℃
1
1E-06
1E-05
E-04
E-03
1E-02
1E-01
1
Time in Avalanche , tav(S)
Source-Drain Voltage, Vsd, (V)
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
5
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
6
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Test circuit and waveform
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
7
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ Package Information
A
ØP
C
D
B
G
H
E
L
F
C1
N
N
Values (mm)
Item
Min
9.60
15.40
4.40
2.10
2.50
0.70
0.35
1.12
3.40
12.00
2.34
3.00
Max
A
B
10.40
16.20
4.90
2.60
2.90
0.90
0.55
1.42
3.80
14.00
2.74
3.30
C
C1
D
E
F
G
H
L
N
ØP
TO-220F Package
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
8
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
○：
×：
CITC
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
9
MHF04N60CT
Chip Integration Technology Corporation
Silicon N-Channel Power MOSFET
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-22M77
Revised Date : 2015/09/25
Revision : C
10
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