MHF10N60CT [CITC]

600V Silicon N-Channel Power MOSFET;


型号：	MHF10N60CT
厂家：	Chip Integration Technology Corporation
描述：	600V Silicon N-Channel Power MOSFET
文件：	总8页 (文件大小：2817K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Features

■ Outline

• Fast switching.

TO-220F

• ESD improved capability.

• Low gate charge.

• Low reverse transfer capacitances.

• 100% single pulse avalanche energy test.

0.189(4.80)

0.173(4.40)

0.409(10.40)

0.378(9.60)

0.114(2.90)

0.098(2.50)

0.638(16.20)

0.606(15.40)

Marking code

■ Mechanical data

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220F molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

0.056(1.42)

0.044(1.12)

0.102(2.60)

0.082(2.10)

Drain

0.551(14.0)

0.472(12.0)

• Polarity: As marked.

• Mounting Position : Any.

0.035(0.90)

0.028(0.70)

Gate

0.022(0.55)

0.014(0.35)

0.108(2.74)

0.092(2.34)

• Weight : Approximated 2.25 gram.

Source

Dimensions in inches and (millimeters)

■ Absolute(T_C= 25^OC unless otherwise specified)

Symbol

V_DSS

PARAMETER

CONDITIONS

MHF10N60CT

UNIT

Drain-Source Voltage

600

Continuous Drain Current

Pulsed Drain Current(1)

Gate-Source Voltage

I_D

T_C= 100^OC

I_DM

V_GS

E_AS

I_AR

±30

800

4.0

Single Pulse Avalanche Energy(2)

Avalanche Current(1)

Repetitive Avalanche Energy(1)

E_AR

Power Dissipation

P_D

Derating factor above 25^OC

0.4

W/^OC

V/ns

^OC

Peak Diode Recovery dv/dt(3)

Gate source ESD

dV/dt

V_ESD(G-S)

T_J, T_STG

T_L

5.0

HBM-C = 100pf, R = 1.5kΩ

4000

-55 ~ +150

300

Operating and Storage Temperature Range

Maximum temperature for soldering

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

2.L=10.0mH, I_D= 12.6A, Start T_J= 25^OC.

3.I_SD=10A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J= 25^OC.

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Electrical characteristics(T_C= 25^OC unless otherwise specified)

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

V_DSS

PARAMETER

Drain-Source Breakdown Voltage

Bvdss Temperature Coefficient

V_GS= 0V, I_D= 250µA

I_D= 250uA, Reference 25^OC

V_DS= 600V, V_GS= 0V, T_a= 25°C

V_DS= 480V, V_GS= 0V, T_a= 125°C

V_GS= 20V

600

BV_DSS/ T_J

0.74

V/^OC

Drain-Source Leakage Current

I_DSS

100

Gate-Source Leakage Current, Forward

Gate-Source Leakage Current, Reverse

I_GSS(F)

I_GSS(R)

V_GS= -20V

-10

■ ON Characteristics

PARAMETER

CONDITIONS

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 5A

Symbol MIN. TYP. MAX. UNIT

V_GS(th)

Gate Threshold Voltage

2.0

4.0

R_DS(on)

Static Drain-Source On-Resistance

0.6

0.75

■ Dynamic Characteristics

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

g_fs

V_DS= 15V, I_D= 5A

Forward Transconductance

Input Capacitance

C_iss

C_oss

C_rss

1556

158

Output Capacitance

V_DS= 25V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

■ Resistive Switching Characteristics

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

td_(ON)

Turn-on Delay Time

Rise Time

I_D= 10A, V_DD= 300V, V_GS= 10V, R_G= 4.7Ω

td_(OFF)

Turn-off Delay Time

Fail Time

Q_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_gs

I_D= 10A, V_DD= 300V, V_GS= 10V

7.4

Q_gd

■ Source-Drain Diode Characteristics

PARAMETER

CONDITIONS

Boby Diode

Symbol MIN. TYP. MAX. UNIT

I_S

I_SM

V_SD

t_rr

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Boby Diode

I_S= 10A, V_GS= 0V

1.5

I_S= 10A, T_J= 25^OC, dI_F/dt = 100A/μs,

V_GS= 0V

Reverse recovery time

262

Reverse recovery charge

Q_rr

1727

■ Thermal characteristics

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

R_θJC

R_θJA

Junction to Case

2.5

Thermal Resistance

^OC/W

Junction to Ambient

100

■ Thermal characteristics

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

Gate-Source Breakdown Voltage

I_GS= ±1mA(open Drain)

V_GSO

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Rating and characteristic curves

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Rating and characteristic curves

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Rating and characteristic curves

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Test circuit and waveform

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ Test circuit and waveform

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT

600V Silicon N-Channel Power MOSFET

■ CITC reserves the right to make changes to this document and its products and specifications at any

time without notice.

■ Customers should obtain and confirm the latest product information and specifications before final

design, purchase or use.

■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does CITC assume any liability for application assistance or customer product

design.

■ CITC does not warrant or accept any liability with products which are purchased or used for any

unintended or unauthorized application.

■ No license is granted by implication or otherwise under any intellectual property rights of CITC.

■ CITC products are not authorized for use as critical components in life support devices or systems

without express written approval of CITC.

http://www.citcorp.com.tw/

Tel:886-3-5600628

Fax:886-3-5600636

Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)

Document ID : DS-21M59

Revised Date : 2015/09/16

Revision : C1

MHF10N60CT [CITC]

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