CS30L60CT-A [CITC]
Super Low Barrier High Voltage Power Rectifier;![CS30L60CT-A](http://pdffile.icpdf.com/pdf2/p00351/img/icpdf/CS30L60CT-A_2160941_icpdf.jpg)
型号: | CS30L60CT-A |
厂家: | ![]() |
描述: | Super Low Barrier High Voltage Power Rectifier |
文件: | 总3页 (文件大小:472K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x15A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
60V
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
150OC
0.53V
F
C
D
E
B
C
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
M
H
E
J
■ Features
I
K
D
L
M
N
ØP
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
J
N
Alternate
Dimensions in inches(millimeters)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
K
symbol
Min
0.394(10.0)
0.228(5.8)
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
F
C
D
E
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
B
C
■ Mechanical data
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
Marking code
F
G
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS30L60CT-A
CS30L60CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
60
Forward rectified current (total device)
30
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
IRRM
EAS
280
Peak repetitive reverse surge current
(per diode)
2us - 1kHz
3
A
mJ
W
Non-repetitive avalanche energy
(per diode)
TJ = 25OC, IAS = 20A, L = 8.5mH, tp = 1ms
400
8600
Repetitive peak avalanche energy
(per diode)
1us, 25OC
PARM
OC/W
OC
RθJC
Thermal resistance(1)
Junction to case
4
Operating and Storage temperature
TJ, TSTG
-55 ~ +150
Parameter
Conditions
IF = 15A, TJ = 25OC
IF = 15A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Symbol
VF
MIN.
TYP.
530
MAX.
UNIT
mV
600
550
0.5
60
Forward voltage drop (per diode)
IR
Reverse current (per diode)
mA
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7
1
CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
■ Rating and characteristic curves
Fig. 1 - Forward Power Dissipation (per diode)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
16
100
10
1
12
8
TA=150°C
TA=125°C
TA=100°C
0.1
TA=75°C
TA=25°C
4
0
0.01
0
5
10
15
20
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Average Forward Current,IF(AV) (A)
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
1000
Fig.4 - Forward Current Derating Curve (per diode)
18
100
10
1
15
12
9
TA=125OC
TA=100OC
TA=75OC
6
3
0.1
TA=25OC
0
25
50
75
100
125
OC)
150
175
0.01
Case Temperature,TC
(
0
10
20
30
40
50
60
Reverse Voltage,VR (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage (per diode)
Fig. 6 - Maximum Avalanche Power Curve
100000
10000
10000
1000
100
1000
10
100
1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Reverse Voltage,VR (V)
Pulse Duration,TP (us)
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7
2
CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7
3
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