CS30L60CTG-A [CITC]
30A Low Barrier Diode;
| 型号： | CS30L60CTG-A |
| 厂家： | 
Chip Integration Technology Corporation |
| 描述： | 30A Low Barrier Diode |
| 文件： | 总3页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS30L60CTG-A
30A Low Barrier Diode
Main Product Characteristics
■ Outline
TO-220AB
IF(AV)
VRRM
TJ
2x15A
60V
150OC
0.419(10.66)
0.387(9.85 )
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0.58V
Vfmax)
■ Features
0.269(6.85)
0.226(5.75)
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
0.624(15.87)
0.548(13.93)
0.139(3.55 )
MIN
• Halogen-free part
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.177(4.50) MAX
0.038(0.96)
0.019(0.50)
0.50(12.70) MIN
0.025(0.65) MAX
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
0.1(2.54)
PIN 1
PIN 3
PIN 2
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS30L60CTG-A
CS30L60CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
60
TC = 110OC
Forward rectified current (total device)
30
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
280
OC/W
OC
RθJC
Thermal resistance(1) (per diode)
Operating and Storage temperature
Junction to case
2
TJ, TSTG
-65 ~ +150
Parameter
Conditions
IF = 15A, TJ = 25OC
IF = 15A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Symbol
VF
MIN.
TYP.
MAX.
UNIT
mV
600
550
0.5
60
Forward voltage drop (per diode)
IR
Reverse current (per diode)
mA
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11KHB
Revised Date : 2015/08/03
Revision : C
1
CS30L60CTG-A
30A Low Barrier Diode
■ Rating and characteristic curves
Fig. 1 - Forward Power Dissipation (per diode)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
16
12
8
100
10
1
TA=150°C
TA=125°C
TA=100°C
0.1
TA=75°C
TA=25°C
4
0
0.01
0
5
10
15
20
25
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Average Forward Current,IF(AV) (A)
Instantaneous Forward Voltage,VF (Volts)
Fig. 3 - Reverse Characteristics (per diode)
Fig.4 - Forward Current Derating Curve(total device)
1000
30
100
10
1
20
10
TA=125OC
TA=100OC
TA=75OC
single phase half wave 60Hz
resistive or inductive load
0.1
TA=25OC
0
25
50
75
100
125
OC)
150
175
Case Temperature,TC
(
0.01
0
10
20
30
40
50
60
Reverse Voltage,VR (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage (per diode)
10000
1000
100
0.1
1
10
100
Reverse Voltage,VR (V)
Document ID : DS-11KHB
Revised Date : 2015/08/03
Revision : C
2
CS30L60CTG-A
30A Low Barrier Diode
■ CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
■ Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
■ CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
■ No license is granted by implication or otherwise under any intellectual property rights of CITC.
■ CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
Document ID : DS-11KHB
Revised Date : 2015/08/03
Revision : C
3
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