CHT5551WPT [CHENMKO]
NPN SILICON Transistor; NPN硅晶体管
| 型号： | CHT5551WPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN SILICON Transistor |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT5551WPT
SURFACE MOUNT
NPN SILICON Transistor
VOLTAGE 160 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
SC-70/SOT-323
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* Suitable for high packing density.
CONSTRUCTION
0.65
1.3±0.1
2.0±0.2
0.65
* NPN transistors in one package.
0.3±0.1
1.25±0.1
MARKING
* YW
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
2.0~2.45
CIRCUIT
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
180
UNIT
V
−
−
−
VCEO
VEBO
collector-emitter voltage
emitter-base voltage
open base
160
6.0
V
V
open collector
IC
−
collector current (DC)
total power dissipation
mA
200
0.3
W
Ptot
Tstg
−
Tamb ≤ 25 °C; note 1
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
2004-11
Note
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT5551WPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
420
K/W
1.Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
collector cut-off current
collector cut-off current
CONDITIONS
MIN.
MAX.
50
UNIT
V
CB= 120 V
CB= 120 V,TA=100OC
−
−
nA
uA
50
50
ICBO
V
IEBO
nA
emitter cut-off current
VEB=4.0V
−
hFE
IC = 1.0 mA; VCE
80
−
DC current gain
= 5V
IC = 10mA; VCE = 5V
IC = 50 mA; VCE =5V
80
30
250
−
0.15
V
−
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1.0 mA
IC = 50 mA; IB = 5.0 mA
IC =10mA; IB =1.0mA
V
V
−
−
−
0.2
1.0
1.0
6.0
VBEsat
base-emitter saturation voltage
collector capacitance
V
IC =-50 mA; IB = 5.0 mA
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
−
Cob
hfe
pF
50
VCE=10V,IC=1.0mA,f=1.0KHz
200
300
8.0
IC = 10 mA; VCE = 1 0 V;
f = 100 MHz
fT
transition frequency
100
MHz
dB
I
C = 200 mA; V
; RS = 1 0 Ω;
CE= 5 V
Hz to 15.7KHz
F
noise Þgure
−
f =10
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