CHDTC144GKPT [CHENMKO]
NPN Digital Silicon Transistor; NPN数字硅晶体管
| 型号： | CHDTC144GKPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Digital Silicon Transistor |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTC144GKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-59/SOT-346
* Small surface mounting type. (SC-59/SOT-346)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=47kΩ, Typ. )
(2)
(3)
0.95
2.7~3.1
0.95
(1)
1.7~2.1
CONSTRUCTION
0.3~0.51
* One NPN transistors and bias of thin-film resistors in one
package.
1.2~1.9
MARKING
GKC
0.89~1.3
0.085~0.2
0~0.1
Emitter
Base
0.3~0.6
2
1
CIRCUIT
2.1~2.95
R1
TR
3
Collector
Dimensions in millimeters
SC-59/SOT-346
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
50
V
V
V
50
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
5
IC(Max.)
PD
Collector current
100
mA
mW
OC
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
200
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTC144GKPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=50uA
MIN.
50.0
TYP.
MAX.
UNIT
−
−
−
−
−
−
−
−
BVCBO
BVCEO
BVEBO
Collector-Base breakdown voltage
V
V
V
V
Collector-Emitter breakdown voltage IC=1mA
50.0
5.0
−
IE=160uA
Emitter-Base breakdown voltage
IC=10mA; IB=0.5mA
VCE(sat)
ICBO
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
0.3
0.5
130
−
−
uA
uA
VCB=50V
IEBO
VEB=4V
65
68
−
−
hFE
IC=5mA; VCE=5.0V
R1
Input resistor
32.9
47
61.1
KΩ
f T
Transition frequency
IE=-5mA, VCE=10.0V
−
250
−
MHz
f==100MHz
Note
1.Pulse test: tp≤300uS; δ ≤0.02.
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