CHDTC144VKPT [CHENMKO]
NPN Digital Silicon Transistor; NPN数字硅晶体管
| 型号： | CHDTC144VKPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Digital Silicon Transistor |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTC144VKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 30 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-59/SOT-346
* Small surface mounting type. (SC-59/SOT346)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=47kΩ, Typ. )
(2)
(3)
0.95
2.7~3.1
0.95
(1)
1.7~2.1
CONSTRUCTION
0.3~0.51
1.2~1.9
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
0.89~1.3
VKA
0.085~0.2
0~0.1
0.3~0.6
Gnd
2
In
1
CIRCUIT
2.1~2.95
R2
R1
TR
3
Dimensions in millimeters
SC-59/SOT-346
Out
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Supply voltage
CONDITIONS
MIN.
MAX.
50
UNIT
VCC
−
V
V
VIN
Input voltage
-15
−
+40
30
IO
DC Output current
mA
−
IC(Max.)
PTOT
TSTG
TJ
100
200
+150
150
140
Tamb ≤ 25 OC, Note 1
−
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
mW
OC
−55
−
OC
RθJ-S
−
junction - soldering point
OC/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-01
RATING CHARACTERISTIC ( CHDTC144VKPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
Input off voltage
T
CONDITIONS
MIN.
1.0
TYP.
MAX.
UNIT
−
−
−
VIoff)
IO=100uA; VCC=5.0V
IO=2mA; VO=0.3V
IO=10mA; II=0.5mA
V
V
V
VI(on)
6.0
Input on voltage
−
VO(on)
II
0.1
−
0.3
Output voltage
Input current
−
−
VI=5V
0.16
0.5
−
mA
uA
IC(off)
hFE
Output current
DC current gain
Input resistor
VI=0V; VCC=50V
IO=5mA; VO=5.0V
−
−
33
−
R1
61.1
0.26
−
KΩ
47
32.9
0.17
−
R2/R1
f T
Resistor ratio
0.21
250
Transition frequency
IE=-5mA, VCE=10.0V
f==100MHz
MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
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