CHDTA143EEPT [CHENMKO]
PNP Digital Silicon Transistor; PNP数字硅晶体管型号: | CHDTA143EEPT |
厂家: | CHENMKO ENTERPRISE CO. LTD. |
描述: | PNP Digital Silicon Transistor |
文件: | 总3页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTA143EEPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-75/SOT-416
* Small surface mounting type. (SC-75/SOT416)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated PNP transistors in one package.
* Built in bias resistor(R1=4.7kΩ, Typ. )
0.1
0.2±
0.05
0.5
0.5
1.6±0.2
1.0±0.1
0.3±
0.1
0.05
0.1
0.2±
0.8±0.1
CONSTRUCTION
0.05
* One PNP transistors and bias of thin-film resistors in one
package.
MARKING
EE2
0.6~0.9
0~0.1
0.15±0.05
0.1Min.
Gnd
2
In
1
1.6±0.2
CIRCUIT
R2
R1
TR
3
SC-75/SOT-416
Dimensions in millimeters
Out
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Supply voltage
MIN.
MAX.
-50
UNIT
VCC
−
V
V
VIN
Input voltage
-30
−
+10
-100
-100
150
IO
DC Output current
mA
−
IC(Max.)
PTOT
TSTG
TJ
Tamb ≤ 25 OC, Note 1
−
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
mW
OC
−55
−
+150
150
OC
junction - soldering point
140
OC/W
RθJ-S
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTA143EEPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
Input off voltage
T
CONDITIONS
MIN.
-0.5
TYP.
MAX.
UNIT
−
−
−
VIoff)
IO=-100uA; VCC=-5.0V
IO=-20mA; VO=-0.3V
IO=-10mA; II=-0.5mA
V
V
VI(on)
-3.0
Input on voltage
−
VO(on)
II
-0.1
−
-0.3
Output voltage
Input current
−
V
−
VI=-5V
-1.8
-0.5
−
mA
IC(off)
hFE
Output current
DC current gain
Input resistor
VI=0V; VCC=-50V
IO=-10mA; VO=-5.0V
−
−
uA
20
−
R1
6.11
1.2
−
KΩ
MHz
3.29
0.8
−
4.7
1.0
250
R2/R1
f T
Resistor ratio
Transition frequency
IC=-5mA, VCE=-10.0V
f==100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTA143EEPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
Fig.2 Output current vs. input voltage
(OFF characteristics)
(ON characteristics)
−100
−10m
VO=−0.3V
VCC=−5V
−5m
−50
Ta=100°C
25°C
−40°C
−2m
−1m
−
20
10
−
−500µ
Ta=−40°C
25°C
100°C
−200µ
−
5
−100µ
−50µ
−2
−1
−20µ
−10µ
−5µ
−500m
−200m
−100m
−2µ
−1µ
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I (A)
O
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
−1
1k
lO/lI=20
VO=−5V
−500m
500
Ta=100°C
25°C
−200m
200
100
−40°C
−100m
Ta=100°C
25°C
−40°C
−50m
−20m
50
20
10
5
−10m
−5m
2
1
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
OUTPUT CURRENT : I (A)
O
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