CHDTA143TEPT [CHENMKO]
PNP Digital Silicon Transistor; PNP数字硅晶体管
| 型号： | CHDTA143TEPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Digital Silicon Transistor |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTA143TEPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-75/SOT-416
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated PNP transistors in one package.
* Built in bias resistor(R1=4.7kΩ, Typ. )
0.1
0.2±
0.05
0.5
0.5
1.6±0.2
1.0±0.1
0.3±
0.1
0.05
CONSTRUCTION
0.1
0.2±
0.8±0.1
0.05
* One PNP transistors and bias of thin-film resistors in one
package.
MARKING
0.6~0.9
0~0.1
TE1
0.15±0.05
0.1Min.
E
B
1.6±0.2
2
1
CIRCUIT
TR
R1
3
C
SC-75/SOT-416
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maxuimm Rating System (IEC60134).
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
-50
-50
-5
V
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
V
IC(Max.)
PD
Collector current
-100
150
mA
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
mW
OC
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTA143TEPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
MIN.
-50.0
TYP.
MAX.
UNIT
−
−
−
−
−
BVCBO
BVCEO
BVEBO
Collector-Base breakdown voltage
IC= -50uA
V
V
V
V
Collector-Emitter breakdown voltage IC= -1mA
-50.0
-5.0
−
IE= -50uA
−
Emitter-Base breakdown voltage
IC= -5mA; IB= -0.25mA
−
−
−
VCE(sat)
ICBO
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
-0.3
-0.5
-0.5
600
−
uA
uA
VCB= -50V
IEBO
VEB= -4V
−
hFE
IC= -1mA; VCE= -5.0V
100
250
R1
Input resistor
3.29
4.7
6.11
KΩ
f T
Transition frequency
IE=5mA, VCE= -10.0V
f==100MHz
−
250
−
MHz
Note
1.Pulse test: tp≤300uS; δ ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTA143TEPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
Fig.2 Collector-emitter saturation
current
voltage vs. collector current
-1
1k
V
CE=-5V
lC/lB=20
-500m
500
-200m
-100m
-50m
200
100
50
Ta=100OC
25OC
-40OC
100OC
25OC
-40OC
20
-20m
10
5
-10m
-5m
2
1
-2m
-1m
-100u
−1m
-5m-10m
-50m -100m
-100u
-500u -1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
相关型号：
©2020 ICPDF网 联系我们和版权申明