CHDTA124XKGP [CHENMKO]

Transistor,;
CHDTA124XKGP
型号: CHDTA124XKGP
厂家: CHENMKO ENTERPRISE CO. LTD.    CHENMKO ENTERPRISE CO. LTD.
描述:

Transistor,

文件: 总3页 (文件大小:199K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CHENMKO ENTERPRISE CO.,LTD  
CHDTA124XKGP  
SURFACE MOUNT  
PNP Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SOT-23)  
* High current gain.  
SOT-23  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Internal isolated PNP transistors in one package.  
* Built in bias resistor(R1=22kΩ, Typ. )  
(1)  
(2)  
(3)  
CONSTRUCTION  
* One PNP transistors and bias of thin-film resistors in one  
package.  
(
)
(
)
.055 1.40  
.028 0.70  
(
)
(
)
.047 1.20  
.020 0.50  
(
)
.103 2.64  
.086 (2.20)  
Gnd  
2
In  
1
(
)
.045 1.15  
CIRCUIT  
(
)
.033 0.85  
R2  
R1  
TR  
3
SOT-23  
Dimensions in inches and (millimeters)  
Out  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
Supply voltage  
MIN.  
MAX.  
-50  
UNIT  
VCC  
V
V
VIN  
Input voltage  
-40  
+10  
-100  
-100  
200  
IO  
DC Output current  
mA  
IC(Max.)  
PTOT  
TSTG  
TJ  
Tamb 25 OC, Note 1  
Total power dissipation  
Storage temperature  
Junction temperature  
Thermal resistance  
mW  
OC  
55  
+150  
150  
OC  
junction - soldering point  
140  
OC/W  
RθJ-S  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2003-12  
RATING CHARACTERISTIC ( CHDTA124XKGP )  
CHARACTERISTICS  
amb = 25 °C unless otherwise speciÞed.  
SYMBOL PARAMETER  
Input off voltage  
T
CONDITIONS  
MIN.  
-0.4  
TYP.  
MAX.  
UNIT  
VIoff)  
IO=-100uA; VCC=-5.0V  
IO=-2mA; VO=-0.3V  
IO=-10mA; II=-0.5mA  
V
V
V
VI(on)  
-2.5  
Input on voltage  
VO(on)  
II  
Output voltage  
Input current  
-0.1  
-0.3  
-0.36  
-0.5  
VI=-5V  
mA  
uA  
IC(off)  
hFE  
Output current  
DC current gain  
Input resistor  
VI=0V; VCC=-50V  
IO=-5mA; VO=-5.0V  
68  
15.4  
1.7  
R1  
22  
28.6  
2.6  
KΩ  
R2/R1  
f T  
Resistor ratio  
2.1  
Transition frequency  
IC=-5mA, VCE=-10.0V  
250  
MHz  
f==100MHz  
Note  
1.Pulse test: tp300uS; δ≤0.02.  
RATING CHARACTERISTIC CURVES ( CHDTA124XKGP )  
Typical Electrical Characteristics  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
100  
50  
10m  
5m  
VO=−0.3V  
V
CC=−5V  
2m  
1m  
20  
10  
Ta=−40°C  
25°C  
500µ  
Ta=100°C  
200µ  
100µ  
50µ  
5  
2  
25°C  
100°C  
40°C  
1  
20µ  
10µ  
5µ  
500m  
200m  
100m  
2µ  
1µ0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
100µ −200µ −500µ −1m  
2m  
5m 10m 20m  
50m 100m  
INPUT VOLTAGE : VI(off) (V)  
OUTPUT CURRENT : I (A)  
O
Fig.3 DC current gain vs. output  
current  
Fig.4 Output voltage vs. output  
current  
1  
1k  
I
O
/I  
I
=20  
VO  
=−5V  
500m  
500  
200m  
100m  
50m  
200  
100  
50  
Ta=100°C  
25°C  
Ta=100°C  
25°C  
40°C  
20m  
10m  
20  
10  
5
40°C  
5m  
2m  
1m  
2
1
100µ −200µ −500µ −1m 2m  
5m 10m 20m  
50m 100m  
100µ −200µ  
500µ −1m 2m  
5m 10m 20m  
50m 100m  
OUTPUT CURRENT : I  
O
(A)  
OUTPUT CURRENT : I (A)  
O

相关型号:

CHDTA124XKPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA124XKPTGP

Transistor,
CHENMKO

CHDTA124XMPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA124XMPTGP

Transistor,
CHENMKO

CHDTA124XUGP

Transistor,
CHENMKO

CHDTA124XUPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA124XUPTGP

Transistor,
CHENMKO

CHDTA125TKGP

Transistor,
CHENMKO

CHDTA125TKPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA125TUPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA143EEPT

PNP Digital Silicon Transistor
CHENMKO

CHDTA143EKPT

PNP Digital Silicon Transistor
CHENMKO